Semiconductor device and method for manufacturing the same
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-031/0203
H01L-051/56
H01L-027/12
H01L-027/32
H01L-051/52
출원번호
US-0248302
(2011-09-29)
등록번호
US-9178182
(2015-11-03)
우선권정보
JP-2003-069742 (2003-03-14)
발명자
/ 주소
Takayama, Toru
Maruyama, Junya
Ohno, Yumiko
출원인 / 주소
Semiconductor Energy Laboratory Co., Ltd.
대리인 / 주소
Fish & Richardson P.C.
인용정보
피인용 횟수 :
0인용 특허 :
58
초록▼
To realize a high-performance liquid crystal display device or light-emitting element using a plastic film. A CPU is formed over a first glass substrate and then, separated from the first substrate. A pixel portion having a light-emitting element is formed over a second glass substrate, and then, se
To realize a high-performance liquid crystal display device or light-emitting element using a plastic film. A CPU is formed over a first glass substrate and then, separated from the first substrate. A pixel portion having a light-emitting element is formed over a second glass substrate, and then, separated from the second substrate. The both are bonded to each other. Therefore, high integration can be achieved. Further, in this case, the separated layer including the CPU serves also as a sealing layer of the light-emitting element.
대표청구항▼
1. A semiconductor device comprising: a first substrate;a first adhesive layer over the first substrate;a pixel portion and a driver circuit over the first adhesive layer, the pixel portion comprising: a first transistor over the first adhesive layer;a second transistor over the first adhesive layer
1. A semiconductor device comprising: a first substrate;a first adhesive layer over the first substrate;a pixel portion and a driver circuit over the first adhesive layer, the pixel portion comprising: a first transistor over the first adhesive layer;a second transistor over the first adhesive layer;a first electrode over the first transistor;an EL layer over the first electrode; anda second electrode over the EL layer;a second substrate provided with a circuit comprising a third transistor;a second adhesive layer between the circuit and the second substrate; anda sealing material surrounding the pixel portion and the driver circuit,wherein the circuit overlaps with the driver circuit, andwherein the pixel portion, the driver circuit, the sealing material, and the circuit are provided between the first adhesive layer and the second adhesive layer. 2. The semiconductor device according to claim 1, wherein each of the first substrate and the second substrate is a plastic substrate. 3. An electronic device having the semiconductor device according to claim 1, wherein the electronic device is selected from the group consisting of a video camera, a digital camera, a head mounted display, a car navigation system, a car stereo, a personal computer, a mobile computer, a mobile phone and an electric book. 4. A semiconductor device according to claim 1, wherein the first substrate and the second substrate are capable of bending. 5. A semiconductor device comprising: a first substrate;a first adhesive layer over the first substrate;a pixel portion comprising a light-emitting element over the first adhesive layer;a driver circuit over the first adhesive layer;a second substrate provided with a circuit;a second adhesive layer between the circuit and the second substrate; anda sealing material surrounding the pixel portion and the driver circuit,wherein the circuit overlaps with the driver circuit, andwherein the pixel portion, the driver circuit, the sealing material, and the circuit are provided between the first adhesive layer and the second adhesive layer. 6. A semiconductor device according to claim 5, wherein the first substrate comprises an organic resin material. 7. A semiconductor device according to claim 5, wherein the circuit comprises: a central processing unit, the central processing unit comprising: a control unit; andan arithmetic unit; anda memory unit, andwherein the central processing unit comprises a plurality of transistors. 8. A semiconductor device according to claim 5, wherein the circuit comprises a thin film diode. 9. A semiconductor device according to claim 5, wherein the circuit comprises a silicon-based PIN junction photoelectric conversion element. 10. A semiconductor device according to claim 5, wherein the circuit comprises a silicon resistance element. 11. A semiconductor device according to claim 5, wherein the first substrate and the second substrate are capable of bending. 12. A semiconductor device comprising: a first substrate;a first adhesive layer over the first substrate;a pixel portion comprising a light-emitting element over the first adhesive layer;a driver circuit over the first adhesive layer;a second substrate provided with a circuit;a sealing material comprising a conductive particle, the sealing material surrounding the pixel portion and the driver circuit;a second adhesive layer between the circuit and the second substrate;a connection wiring over the first substrate; andan FPC electrically connected to the circuit through the conductive particle and the connection wiring,wherein the circuit overlaps with the driver circuit, andwherein the pixel portion, the driver circuit, the sealing material, and the circuit are provided between the first adhesive layer and the second adhesive layer. 13. A semiconductor device according to claim 12, wherein the first substrate comprises an organic resin material. 14. A semiconductor device according to claim 12, wherein the circuit comprises: a central processing unit, the central processing unit comprising: a control unit; andan arithmetic unit; anda memory unit, andwherein the central processing unit comprises a plurality of transistors. 15. A semiconductor device according to claim 12, wherein the circuit comprises a thin film diode. 16. A semiconductor device according to claim 12, wherein the circuit comprises a silicon-based PIN junction photoelectric conversion element. 17. A semiconductor device according to claim 12, wherein the circuit comprises a silicon resistance element. 18. A semiconductor device according to claim 12, wherein the FPC is provided over the first substrate. 19. A semiconductor device according to claim 12, wherein the first substrate and the second substrate are capable of bending. 20. A semiconductor device comprising: a first adhesive layer;a pixel portion comprising a light-emitting element over the first adhesive layer;a driver circuit over the first adhesive layer;a circuit over the driver circuit;a second adhesive layer over the circuit; anda sealing material surrounding the pixel portion and the driver circuit;wherein the circuit overlaps with the driver circuit, andwherein the pixel portion, the driver circuit, the sealing material, and the circuit are provided between the first adhesive layer and the second adhesive layer. 21. A semiconductor device according to claim 20, wherein the circuit comprises: a central processing unit, the central processing unit comprising: a control unit; andan arithmetic unit; anda memory unit, andwherein the central processing unit comprises a plurality of transistors. 22. A semiconductor device according to claim 20, wherein the circuit comprises a thin film diode. 23. A semiconductor device according to claim 20, wherein the circuit comprises a silicon-based PIN junction photoelectric conversion element. 24. A semiconductor device according to claim 20, wherein the circuit comprises a silicon resistance element.
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