초록 ▼

This invention relates to a polymer/inorganic multi-layer encapsulation film, and more particularly, to a multi-layer encapsulation film, which includes a plasma polymer thin film layer formed using a cross-shaped precursor having Si—O bonding and an inorganic thin film layer, and ensures flexibilit

This invention relates to a polymer/inorganic multi-layer encapsulation film, and more particularly, to a multi-layer encapsulation film, which includes a plasma polymer thin film layer formed using a cross-shaped precursor having Si—O bonding and an inorganic thin film layer, and ensures flexibility and has improved encapsulation.

대표청구항 ▼

1. A multi-layer encapsulation film, comprising: a plasma polymer thin film layer formed by using a precursor represented by Chemical Formula 1 below; andan inorganic thin film layer: wherein R1 to R12 are each independently H or C1-C5 alkyl, andwherein the plasma polymer thin film layer is stacked

1. A multi-layer encapsulation film, comprising: a plasma polymer thin film layer formed by using a precursor represented by Chemical Formula 1 below; andan inorganic thin film layer: wherein R1 to R12 are each independently H or C1-C5 alkyl, andwherein the plasma polymer thin film layer is stacked between inorganic thin film layers. 2. The multi-layer encapsulation film of claim 1, wherein the precursor is tetrakis(trimethylsilyloxy)silane. 3. The multi-layer encapsulation film of claim 1, wherein the inorganic thin film layer is stacked on either or both surfaces of the plasma polymer thin film layer. 4. The multi-layer encapsulation film of claim 1, wherein the plasma polymer thin film layer is formed by plasma enhanced chemical vapor deposition (PECVD). 5. The multi-layer encapsulation film of claim 1, wherein the inorganic thin film layer is formed by atomic layer deposition. 6. The multi-layer encapsulation film of claim 1, wherein the inorganic thin film layer comprises Al2O3, SiO2, TiO2, ZnO or combinations thereof. 7. The multi-layer encapsulation film of claim 1, wherein the plasma polymer thin film layer has a thickness of 10-200 nm. 8. The multi-layer encapsulation film of claim 1, wherein the inorganic thin film layer has a thickness of 1-50 nm. 9. The multi-layer encapsulation film of claim 1, wherein the multi-layer encapsulation film is stacked on a flexible polymer substrate. 10. A method of manufacturing a multi-layer encapsulation film of claim 1, comprising: 1) depositing a plasma polymer thin film layer using a precursor represented by Chemical Formula 1 below; and2) depositing an inorganic thin film layer using an inorganic precursor of Chemical Formula 1; and3) stacking the plasma polymer thin film layer between inorganic thin film layers: wherein R1 to R12 are each independently H or C1-C5 alkyl. 11. An organic electronic device, comprising a substrate and an organic electronic device layer formed thereon, wherein an organic layer(s) is encapsulated by the multi-layer encapsulation film of claim 1. 12. The organic electronic device of claim 11, wherein the organic electronic device layer includes a transparent conductive oxide, an organic layer and a metal electrode. 13. The organic electronic device of claim 12, wherein the substrate is any one flexible polymer substrate selected from the group consisting of polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyethylene (PE), polyethersulfone (PES), polycarbonate (PC), polyarylate (PAR) and polyimide (PI),any one metal substrate selected from the group consisting of SUS (steel use stainless), aluminum, steel and copper, ora glass substrate. 14. The organic electronic device of claim 11, wherein the organic electronic device is an organic light emitting diode, an organic solar cell or an organic thin film transistor.