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특허 상세정보

Seal ring

국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판) 23-01   
미국특허분류(USC) D23/269;
출원번호 US-0493857 (2014-06-13)
등록번호 US-D743513 (2015-11-17)
발명자 / 주소
출원인 / 주소
대리인 / 주소
    Sand & Sebolt
인용정보 피인용 횟수 : 48  인용 특허 : 9
초록이 없습니다.
대표
청구항

The ornamental design for a seal ring, as shown and described.

이 특허를 인용한 특허 피인용횟수: 48

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  8. Milligan, Robert Brennan. Formation of boron-doped titanium metal films with high work function. USP20180910083836.
  9. Hagano, Hiroyuki. Gasket. USP201708D796012.
  10. Kawamura, Khotaro; Kashiwagi, Makoto; Ikeda, Hiroshi. Inner cylinder for exhaust gas treatment apparatus. USP201710D799690.
  11. Pore, Viljami. Method and apparatus for filling a gap. USP20190110177025.
  12. Pore, Viljami; Knaepen, Werner; Jongbloed, Bert; Pierreux, Dieter; Van Aerde, Steven R. A.; Haukka, Suvi; Fukuzawa, Atsuki; Fukuda, Hideaki. Method and apparatus for filling a gap. USP2017119812320.
  13. Pore, Viljami; Knaepen, Werner; Jongbloed, Bert; Pierreux, Dieter; Van Der Star, Gido; Suzuki, Toshiya. Method and apparatus for filling a gap. USP2018029887082.
  14. Suemori, Hidemi. Method for depositing dielectric film in trenches by PEALD. USP2018039909214.
  15. Kang, DongSeok. Method for depositing thin film. USP2018029891521.
  16. Takamure, Noboru; Okabe, Tatsuhiro. Method for forming Ti-containing film by PEALD using TDMAT or TDEAT. USP2017019556516.
  17. Shiba, Eiichiro. Method for forming aluminum nitride-based film by PEALD. USP2017079711345.
  18. Fukazawa, Atsuki. Method for forming conformal nitrided, oxidized, or carbonized dielectric film by atomic layer deposition. USP20190110179947.
  19. Fukazawa, Atsuki; Fukuda, Hideaki; Takamure, Noboru; Zaitsu, Masaru. Method for forming dielectric film in trenches by PEALD using H-containing gas. USP2016099455138.
  20. Kimura, Yosuke; de Roest, David. Method for forming film having low resistance and shallow junction depth. USP2016109478415.
  21. Ishikawa, Dai; Fukazawa, Atsuki. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches. USP2017099754779.
  22. Namba, Kunitoshi. Method for forming silicon oxide cap layer for solid state diffusion process. USP2017039607837.
  23. Shiba, Eiichiro. Method for performing uniform processing in gas system-sharing multiple reaction chambers. USP2016099447498.
  24. Yamagishi, Takayuki; Suwada, Masaei; Tanaka, Hiroyuki. Method for positioning wafers in multiple wafer transport. USP2017109793148.
  25. Kato, Richika; Nakano, Ryu. Method for protecting layer by forming hydrocarbon-based extremely thin film. USP20180810043661.
  26. Kato, Richika; Okuro, Seiji; Namba, Kunitoshi; Nonaka, Yuya; Nakano, Akinori. Method for protecting layer by forming hydrocarbon-based extremely thin film. USP2018029899291.
  27. Zaitsu, Masaru. Method of atomic layer etching using functional group-containing fluorocarbon. USP2017089735024.
  28. Zaitsu, Masaru; Kobayashi, Nobuyoshi; Kobayashi, Akiko; Hori, Masaru; Kondo, Hiroki; Tsutsumi, Takayoshi. Method of cyclic dry etching using etchant film. USP2017109793135.
  29. Knaepen, Werner; Maes, Jan Willem; Jongbloed, Bert; Kachel, Krzysztof Kamil; Pierreux, Dieter; De Roest, David Kurt. Method of forming a structure on a substrate. USP2018039916980.
  30. Lee, Choong Man; Yoo, Yong Min; Kim, Young Jae; Chun, Seung Ju; Kim, Sun Ja. Method of forming metal interconnection and method of fabricating semiconductor apparatus using the method. USP20190410249577.
  31. Chun, Seung Ju; Yoo, Yong Min; Choi, Jong Wan; Kim, Young Jae; Kim, Sun Ja; Lim, Wan Gyu; Min, Yoon Ki; Lee, Hae Jin; Yoo, Tae Hee. Method of processing a substrate and a device manufactured by using the method. USP20181110134757.
  32. Kohen, David; Profijt, Harald Benjamin. Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures. USP20190310236177.
  33. Raisanen, Petri; Givens, Michael Eugene. Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures. USP20190310229833.
  34. Zhu, Chiyu; Asikainen, Timo; Milligan, Robert Brennan. NbMC layers. USP20190210211308.
  35. Margetis, Joe; Tolle, John; Bartlett, Gregory; Bhargava, Nupur. Process for forming a film on a substrate using multi-port injection assemblies. USP20190410262859.
  36. Alokozai, Fred; Milligan, Robert Brennan. Process gas management for an inductively-coupled plasma deposition reactor. USP20180710023960.
  37. Miyamoto, Matsutaro. Sealing ring. USP201711D802723.
  38. Miyamoto, Matsutaro. Sealing ring. USP201812D835760.
  39. Zhu, Chiyu. Selective film deposition method to form air gaps. USP2018019859151.
  40. Kim, Young Jae; Choi, Seung Woo; Yoo, Yong Min. Semiconductor device and manufacturing method thereof. USP2018029899405.
  41. Arai, Izumi. Single-and dual-chamber module-attachable wafer-handling chamber. USP2017059640416.
  42. Xie, Qi; de Roest, David; Woodruff, Jacob; Givens, Michael Eugene; Maes, Jan Willem; Blanquart, Timothee. Source/drain performance through conformal solid state doping. USP20180710032628.
  43. Tolle, John. Structures and devices including germanium-tin films and methods of forming same. USP2017109793115.
  44. Jeong, Sang Jin; Han, Jeung Hoon; Choi, Young Seok; Park, Ju Hyuk. Susceptor for semiconductor substrate processing apparatus. USP201810D830981.
  45. Yamagishi, Takayuki; Sato, Kazuo; Tsuji, Naoto. Top plate. USP201604D753269.
  46. Kirkland, Eric. Wafer support ring. USP201804D815385.
  47. Kirkland, Eric A.. Wafer support ring. USP201704D783922.
  48. Kirkland, Eric A.; Raschke, Russ V.; Steffens, Jason T.. Wafer support ring. USP201609D767234.