Substrate cleaning apparatus and vacuum processing system
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/67
C23C-016/455
H01J-037/32
출원번호
US-0429720
(2012-03-26)
등록번호
US-9214364
(2015-12-15)
우선권정보
JP-2011-080098 (2011-03-31)
발명자
/ 주소
Dobashi, Kazuya
Inai, Kensuke
Shimizu, Akitaka
Yasuda, Kenta
Yoshino, Yu
Aida, Toshihiro
Senoo, Takehiko
출원인 / 주소
TOKYO ELECTRON LIMITED
대리인 / 주소
Oblon, McClelland, Maier & Neustadt, L.L.P
인용정보
피인용 횟수 :
0인용 특허 :
37
초록▼
A substrate cleaning apparatus includes a supporting unit, provided in a processing chamber having a gas exhaust port, for supporting a substrate; one or more nozzle units, each for ejecting gas clusters to a peripheral portion of the substrate supported by the supporting unit to remove unnecessary
A substrate cleaning apparatus includes a supporting unit, provided in a processing chamber having a gas exhaust port, for supporting a substrate; one or more nozzle units, each for ejecting gas clusters to a peripheral portion of the substrate supported by the supporting unit to remove unnecessary substances from the peripheral portion; and a moving mechanism for changing relative positions of the supporting unit and the nozzle unit during ejecting the gas clusters. Each nozzle unit discharges a cleaning gas having a pressure higher than that in the processing chamber so that the cleaning gas is adiabatically expanded to form aggregates of atoms and/or molecules.
대표청구항▼
1. A substrate cleaning apparatus comprising: a processing chamber comprising a gas exhaust port;a supporting unit configured to support a substrate, said supporting unit being provided in said processing chamber;one or more nozzle units, each configured to eject gas clusters-to remove unnecessary s
1. A substrate cleaning apparatus comprising: a processing chamber comprising a gas exhaust port;a supporting unit configured to support a substrate, said supporting unit being provided in said processing chamber;one or more nozzle units, each configured to eject gas clusters-to remove unnecessary substances from the substrate; anda moving mechanism configured to change relative positions of the supporting unit and the nozzle units during ejecting the gas clusters,wherein each nozzle unit discharges a cleaning gas having a pressure higher than that in the processing chamber so that the cleaning gas is adiabatically expanded to form aggregates of atoms and/or molecules,wherein said substrate cleaning apparatus further comprises a cleaning gas supply source for supplying said cleaning gas, a flow rate control unit for controlling a flow rate of said cleaning gas, a first gas channel through which said cleaning gas is supplied and a second gas channel through which a pressure increasing gas is supplied,wherein each nozzle unit comprises a pressure chamber to which said first and said second gas channels are connected,wherein said nozzle units comprise a nozzle unit disposed below said substrate, andwherein said pressure chamber comprises a base end side to which said first and said second gas channels are connected and a leading end side having a discharge port facing said substrate and configured to eject said gas clusters thereto. 2. The substrate cleaning apparatus of claim 1, further comprising a purge gas supply unit, disposed at a side of a front surface of the substrate, for discharging a purge gas for outwardly blowing scattered materials, the scattered materials being produced from the substrate due to collision thereof with the gas clusters. 3. The substrate cleaning apparatus of claim 1, wherein the cleaning gas is discharged from each nozzle unit after being mixed with said pressure increasing gas in said pressure chamber. 4. The substrate cleaning apparatus of claim 1, wherein at least one of said nozzle units is configured to change an ejecting angle of the gas clusters with respect to the substrate. 5. The substrate cleaning apparatus of claim 1, wherein at least one of said nozzle units is configured to move in a radial direction of the substrate. 6. The substrate cleaning apparatus of claim 1, wherein at least one of said nozzle units is configured to change an ejecting angle of said gas clusters by being rotated about an axis parallel with said substrate and/or to move in a radial direction of said substrate, and further comprising a control unit which is programmed to control said at least one of said nozzle units to perform at least one of changing said ejecting angle of the gas clusters and moving in said radial direction of the substrate during ejecting the gas clusters. 7. The substrate cleaning apparatus of claim 1, wherein the substrate has a circular shape, andthe moving mechanism is a rotation mechanism for rotatively supporting the substrate about a central axis of the substrate. 8. The substrate cleaning apparatus of claim 1, further comprising the substrate disposed on said supporting unit,wherein said substrate is a silicon wafer obtained after etching various laminated films formed thereon,the unnecessary substances include a plurality of needle-shaped silicon protrusions formed at a peripheral portion of a front surface of the substrate, and various thin films adhered to the peripheral portion of a back surface of the substrate, andwherein said nozzle units comprise a nozzle unit, which is disposed above said substrate and configured to eject said gas clusters towards said needle-shaped silicon protrusions. 9. The substrate cleaning apparatus of claim 1, wherein the unnecessary substances include various laminated films formed on a peripheral portion of at least one of a front surface and a back surface of the substrate, andat least one of said nozzle units is connected to a gas supply system supplying various cleaning gases so that said various cleaning gases are switchably discharged. 10. The substrate cleaning apparatus of claim 1, wherein the unnecessary substances include various laminated films formed on a peripheral portion of at least one of a front surface and a back surface of the substrate, andthe number of the nozzle units is greater than one and the nozzle units discharge different cleaning gases. 11. A vacuum processing system comprising: a vacuum transfer chamber for transferring a substrate in a vacuum atmosphere;a vacuum processing module, connected to a vacuum transfer chamber via a gate valve, for forming a thin film on a substrate or performing dry etching on a thin film formed on the surface of the substrate; andthe substrate cleaning apparatus described in claim 1, connected to the vacuum transfer chamber via a gate valve, for cleaning a peripheral portion of the substrate. 12. The substrate cleaning apparatus of claim 6, wherein said at least one of said nozzle units is configured to change said ejecting angle of said gas clusters by being rotated about an axis parallel with said substrate. 13. The substrate cleaning apparatus of claim 1, wherein the nozzle units are provided inside the processing chamber.
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