[특허]Multiple vapor sources for vapor deposition

Multiple vapor sources for vapor deposition 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	C23C-014/24 C23C-016/04 C23C-016/448 C23C-016/455 C23C-016/52 H01J-037/32 H01L-021/02 H01L-021/314 H01L-021/316 H01L-021/28
출원번호	US-0367010 (2012-02-06)
등록번호	US-9238865 (2016-01-19)
발명자 / 주소	Pomarede, Christophe Shero, Eric Verghese, Mohith Maes, Jan Willem Wang, Chang-Gong
출원인 / 주소	ASM IP HOLDING B.V.
대리인 / 주소	Knobbe Martens Olson & Bear LLP
인용정보	피인용 횟수 : 0 인용 특허 : 41

초록 ▼

A vapor deposition method and apparatus including at least two vessels containing a same first source chemical. A controller is programmed to simultaneously pulse to the reaction space doses or pulses of a gas from the vessels, each of the doses having a substantially consistent concentration of the first source chemical. The apparatus may also include at least two vessels containing a same second source chemical. The controller can be programmed to simultaneously pulse to the reaction space doses or pulses of a gas from the vessels containing the second source chemical, each of the doses having a substantially consistent concentration of the second source chemical. The second source chemical can be pulsed to the reaction space after the reaction space is purged of an excess of the first source chemical.

대표청구항 ▼

1. An apparatus for vapor deposition, comprising: a reaction space configured to receive a substrate;a first plurality of precursor source vessels in fluid communication with the reaction space, wherein a first vessel of the first plurality of precursor source vessels contains a first source chemical and is configured to vaporize the first source chemical, and a second vessel of the first plurality of precursor source vessels contains the same first source chemical and is configured to vaporize the first source chemical wherein the first source chemical comprises at least one of a liquid and solid; anda controller configured to cause delivery of pulses of gas containing the first source chemical from at least two of the first plurality of precursor source vessels to the reaction space during a deposition on a common substrate, wherein the controller is configured to supply the pulses of gas containing the first source chemical from the at least two of the first plurality of precursor source vessels during the deposition on the common substrate, wherein the pulses each includes at least some reactant from the first vessel of the first plurality of vessels, and from the second vessel of the first plurality of vessels, wherein the controller is configured to cause delivery of said pulses for pulse durations in a range between about 0.1 and 10 seconds. 2. The apparatus of claim 1, wherein the first source chemical is a solid. 3. The apparatus of claim 1, wherein the first source chemical is a liquid. 4. The apparatus of claim 1, wherein the first source chemical is HfCl4. 5. The apparatus of claim 1, further comprising a gas source containing an inactive gas, the gas source being in fluid communication with both the first plurality of precursor source vessels and the reaction space. 6. The apparatus of claim 1, further comprising a second plurality of precursor source vessels in fluid communication with the reaction space, each vessel of the second plurality of precursor source vessels containing a same second source chemical. 7. The apparatus of claim 6, wherein the controller is configured to cause delivery of pulses of gas containing the second source chemical from at least two of the second plurality of precursor source vessels to the reaction space. 8. The apparatus of claim 7, wherein the controller is configured so that said pulses of gas from the second plurality of precursor source vessels have a substantially consistent concentration of the second source chemical. 9. An apparatus for vapor deposition, comprising: a reaction space configured to receive a substrate;a first plurality of precursor source vessels in fluid communication with the reaction space, wherein a first vessel of the first plurality of precursor source vessels contains a first source chemical and is configured to vaporize the first source chemical, and a second vessel of the first plurality of precursor source vessels contains the same first source chemical and is configured to vaporize the first source chemical wherein the first source chemical comprises at least one of a liquid and solid; anda controller configured to cause delivery of pulses of gas containing the first source chemical from at least two of the first plurality of precursor source vessels to the reaction space, wherein the controller is configured to alternately supply the pulses of gas containing the first source chemical from the at least two of the first plurality of precursor source vessels during a deposition on the substrate, wherein the pulses include at least a first pulse and a second pulse from the first vessel of the first plurality of precursor source vessels, and an intervening pulse from the second vessel of the first plurality of precursor source vessels after the first pulse and before the second pulse, wherein the controller is configured to cause delivery of said pulses for pulse durations in a range between about 0.1 and 10 seconds;wherein the first plurality of precursor source vessels and controller are configured to form at least a portion of a single film on the substrate from the first source chemical with the first pulse, second pulse, and intervening pulse.

이 특허에 인용된 특허 (41)

Toyoda, Kazuyuki; Kasahara, Osamu; Tanaka, Tsutomu; Sueyoshi, Mamoru; Shima, Nobuhito; Sakai, Masanori, Apparatus and method for use in manufacturing a semiconductor device.
상세보기
Fan Chiko (810 El Quanito Dr. Danville CA 94526) Pearson Anthony (498 Los Pinos Way San Jose CA 95123) Chen J. James (2304 Maximilian Dr. Campbell CA 95008) White ; Jr. James L. (392 Eagle Trace Half, Apparatus for fluid delivery in chemical vapor deposition systems.
상세보기
Latz Rudolph (Frankfurt am Main DEX) Scherer Michael (Rodenbach DEX), Arrangement for the coating of substrates.
상세보기
Blatt, Christopher S.; Pearce, Richard H.; Williams, Graham; Wentworth, III, Edward H., Automatic refill system for ultra pure or contamination sensitive chemicals.
상세보기
Birtcher, Charles Michael; Martinez, Martin Castaneda; Steidl, Thomas Andrew; Vivanco, Gil; Silva, David James, Cabinet for chemical delivery with solvent purging.
상세보기
Birtcher,Charles Michael; Martinez,Martin Castaneda; Steidl,Thomas Andrew; Vivanco,Gil; Silva,David James, Cabinet for chemical delivery with solvent purging and removal.
상세보기
Gregg John N. ; Noah Craig M. ; Jackson Robert M., Chemical delivery system having purge system utilizing multiple purge techniques.
상세보기
Gregg John N. ; Noah Craig M. ; Jackson Robert M., Chemical delivery system having purge system utilizing multiple purge techniques.
상세보기
John N. Gregg ; Craig M. Noah ; Robert M. Jackson, Chemical delivery system having purge system utilizing multiple purge techniques.
상세보기
Kelly Michael A. (35 Lerida Ct. Portola Valley CA 94028), Chemical vapor deposition under a single reactor vessel divided into separate reaction regions with its own depositing a.
상세보기
Bang Won ; Chen Chen-An, Clog resistant gas delivery system.
상세보기
Bang,Won; Wang,Yen Kun; Ghanayem,Steve, Clog-resistant gas delivery system.
상세보기
Ohara Hisanori,JPX ; Arimoto Hiroshi,JPX ; Murakami Reizo,JPX ; Kitagawa Nobuyuki,JPX ; Noguchi Kazuo,JPX ; Okada Yasutaka,JPX, Coated tool and method of manufacturing the same.
상세보기
Goossens Dirk (Sint Niklaas BEX) Boeglin Herman J. (South Meriden CT), Computer-controlled chemical dispensing with alternative operating modes.
상세보기
Raaijmakers, Ivo; Haukka, Suvi P.; Granneman, Ernst H. A., Conformal thin films over textured capacitor electrodes.
상세보기
Guillon, Hervé; Bonnafous, Samuel; Decams, Jean Manuel; Poignant, Frédéric, Device for introducing, injecting or spraying a mixture of a carrier gas and liquid compounds and method for implementing said device.
상세보기
Spohn, Ronald F.; Peters, David Walter, Diptube apparatus and delivery method.
상세보기
Spohn, Ronald F.; Peters, David Walter, Diptube apparatus and delivery method.
상세보기
Miki, Yoshiyuki; Shirai, Kazunari; Kimura, Atsufumi; Yoshida, Naohiro; Yumita, Osamu, Gas supply apparatus.
상세보기
Xu,Mindi; Sayasane,Tay; Paganessi,Joseph E.; Jursich,Gregory M.; Nakamoto,Naoyuki; Nishikawa,Yukinobu; Dulphy,Herve E.; Rameau,Guillaume; Honda,Lorrin, Integral blocks, chemical delivery systems and methods for delivering an ultrapure chemical.
상세보기
Yamaguchi Tooru,JPX ; Tsutahara Kouichirou,JPX ; Suenaga Takayuki,JPX, Liquid vaporizing apparatus.
상세보기
Wen Cheng P. (Mission Viejo CA) Rolph Randy K. (Palos Verdes Estates CA) Zielinski Timothy T. (Torrance CA), MOCVD reactor system for indium antimonide epitaxial material.
상세보기
Gold, Ezra Robert; Fovell, Richard Charles; Cruse, James Patrick; Lee, Jared Ahmad; Geoffrion, Bruno; Buchberger, Douglas Arthur; Salinas, Martin J., Method and apparatus for controlling gas flow to a processing chamber.
상세보기
Gold, Ezra Robert; Fovell, Richard Charles; Cruse, James Patrick; Lee, Jared Ahmad; Geoffrion, Bruno; Buchberger, Douglas Arthur; Salinas, Martin J., Method and apparatus for controlling gas flow to a processing chamber.
상세보기
Gold, Ezra Robert; Fovell, Richard Charles; Cruse, James Patrick; Lee, Jared Ahmad; Geoffrion, Bruno; Buchberger, Douglas Arthur; Salinas, Martin J., Method and apparatus for controlling gas flow to a processing chamber.
상세보기
Burgers, Kenneth Leroy; Chesters, Stephen; Germond, Justin Cole; Pryor, Edward; Erb, Jack W.; Pace, Keith Randall; Meredith, Brian Michael, Method and apparatus for simultaneous gas supply from bulk specialty gas supply systems.
상세보기
Balmashnov Alexander A. (Moscow RUX) Golovanivsky Konstantin S. (Grenoble NY FRX) Omeljanovsky Erzam M. (New York NY) Pakhomov Andrew V. (Moscow PA RUX) Polyakov Alexander Y. (Pittsburgh PA), Method and apparatus for the production of a dissociated atomic particle flow.
상세보기
Kang Sang-bom,KRX ; Lim Hyun-seok,KRX ; Chae Yung-sook,KRX ; Jeon In-sang,KRX ; Choi Gil-heyun,KRX, Method of forming metal layer using atomic layer deposition and semiconductor device having the metal layer as barrier metal layer or upper or lower electrode of capacitor.
상세보기
Lindfors, Sven; Soininen, Pekka T., Method of growing a thin film onto a substrate.
상세보기
Papahadjopoulos,Demetrios; Hong,Keelung; Zheng,Weiwen; Kirpotin,Dmitri B., Methods for attaching proteins to lipidic microparticles with high efficiency.
상세보기
Fleming, Robert J.; McGrath, Joseph M.; Lyons, Christopher S., Microstructured substrates with profile-preserving polymeric coatings.
상세보기
Goossens Dirk (St. Niklass BEX), Modular bubbler container automatic refill system.
상세보기
Kuniaki Horie JP; Yukio Fukunaga JP; Akihisa Hongo JP; Kiwamu Tsukamoto JP; Kenji Kamoda JP; Hirotake Yamagishi JP; Shinya Uemura JP, Positive displacement type liquid-delivery apparatus.
상세보기
Papahadjopoulos,Demetrios; Hong,Keelung; Zheng,Weiwen, Preparation of stable formulations of lipid-nucleic acid complexes for efficient in vivo delivery.
상세보기
O'Connor, Declan P.; Andrew, Rebecca J.; Suggitt, Christopher; Higginbotham, Paul, Process and apparatus for cryogenic separation of gases.
상세보기
Vesnovsky Oleg ; Topoleski Timmie ; Pushnykh Victor,RUX, Product produced by sequential ion implantation and deposition (SIID) technique.
상세보기
Soininen,Pekka T., Safe liquid source containers.
상세보기
Arthur Sherman, Sequential chemical vapor deposition.
상세보기
Shero,Eric J.; Givens,Michael E.; Schmidt,Ryan, Sublimation bed employing carrier gas guidance structures.
상세보기
Brandolf Henry E. (Inver Grove Heights MN), Vapor deposition apparatus and method.
상세보기
Gregg, John; Battle, Scott; Banton, Jeffrey I.; Naito, Donn; Fuierer, Marianne, Vaporizer delivery ampoule.
상세보기

IPC	Description
A	생활필수품
A62	인명구조; 소방(사다리 E06C)
A62B	인명구조용의 기구, 장치 또는 방법(특히 의료용에 사용되는 밸브 A61M 39/00; 특히 물에서 쓰이는 인명구조 장치 또는 방법 B63C 9/00; 잠수장비 B63C 11/00; 특히 항공기에 쓰는 것, 예. 낙하산, 투출좌석 B64D; 특히 광산에서 쓰이는 구조장치 E21F 11/00)
A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

내보내기 구분	파일저장 인쇄 메일전송
구성항목	기본정보 상세정보 관리번호, 국가코드, 자료구분, 상태, 출원번호, 출원일자, 공개번호, 공개일자, 등록번호, 등록일자, 발명명칭(한글), 발명명칭(영문), 출원인(한글), 출원인(영문), 출원인코드, 대표IPC 관리번호, 국가코드, 자료구분, 상태, 출원번호, 출원일자, 공개번호, 공개일자, 공고번호, 공고일자, 등록번호, 등록일자, 발명명칭(한글), 발명명칭(영문), 출원인(한글), 출원인(영문), 출원인코드, 대표출원인, 출원인국적, 출원인주소, 발명자, 발명자E, 발명자코드, 발명자주소, 발명자 우편번호, 발명자국적, 대표IPC, IPC코드, 요약, 미국특허분류, 대리인주소, 대리인코드, 대리인(한글), 대리인(영문), 국제공개일자, 국제공개번호, 국제출원일자, 국제출원번호, 우선권, 우선권주장일, 우선권국가, 우선권출원번호, 원출원일자, 원출원번호, 지정국, Citing Patents, Cited Patents
저장형식	Text(ASCII format) Excel format PIAS분석(.xls)
메일정보	받는사람 (필수) @ 보내는사람 (선택) @ 제목 내용 KISTI 검색결과 이메일 서비스
안내	총 건의 자료가 검색되었습니다. 다운받으실 자료의 인덱스를 입력하세요. (1-10,000) 검색결과의 순서대로 최대 10,000건 까지 다운로드가 가능합니다. 데이타가 많을 경우 속도가 느려질 수 있습니다.(최대 2~3분 소요) 다운로드 파일은 UTF-8 형태로 저장됩니다. 파일의 내용이 제대로 보이지 않을실 때는 웹브라우저 상단의 보기 -> 인코딩 -> 자동선택 여부를 확인하십시오. ~ Text(ASCII format) Excel format

연합인증

Multiple vapor sources for vapor deposition 원문보기

초록 ▼

대표청구항 ▼

연구과제 타임라인

이 특허에 인용된 특허 (41)

관련 콘텐츠

특허 원문 보기

IPC 상위 출원인

AI-Helper ※ AI-Helper는 오픈소스 모델을 사용합니다.

선택된 텍스트

연합인증

Multiple vapor sources for vapor deposition 원문보기

초록 ▼

대표청구항 ▼

연구과제 타임라인

전체(0) 논문(0) 특허(0) 보고서(0)

전체(0) 논문(0) 특허(0) 보고서(0)

이 특허에 인용된 특허 (41)

관련 콘텐츠

특허 원문 보기

IPC 상위 출원인

AI-Helper ※ AI-Helper는 오픈소스 모델을 사용합니다.

선택된 텍스트