초록 ▼

Provided is a heat treatment apparatus that even when annealing SiC at high temperature, can exhibit a low heat capacity and perform uniform heating. The heat treatment apparatus includes a pair of parallel plate electrodes, high-frequency power supply that applies a high-frequency voltage to the pa

Provided is a heat treatment apparatus that even when annealing SiC at high temperature, can exhibit a low heat capacity and perform uniform heating. The heat treatment apparatus includes a pair of parallel plate electrodes, high-frequency power supply that applies a high-frequency voltage to the pair of parallel plate electrodes so as to discharge between the pair of parallel plate electrodes, a temperature measurement instrument that measures the temperature of a sample to be heated which is disposed in the pair of parallel plate electrodes, a gas introduction unit that introduces a gas to the pair of parallel plate electrodes, reflection mirrors that surround the pair of parallel plate electrodes, and a control unit that controls the output of the high-frequency power supply. Heating of a gas due to discharge between the pair of parallel plate electrodes is used to thermally treat the sample to be heated.

대표청구항 ▼

1. A heat treatment apparatus comprising: a heat treatment chamber in which a sample to be heated is heat treated;a planar first electrode disposed in the heat treatment chamber;a planar second electrode, which is facing the first electrode, on which the sample in mounted, disposed in the heat treat

1. A heat treatment apparatus comprising: a heat treatment chamber in which a sample to be heated is heat treated;a planar first electrode disposed in the heat treatment chamber;a planar second electrode, which is facing the first electrode, on which the sample in mounted, disposed in the heat treatment chamber;a high-frequency power supply supplies a high-frequency power to the first electrode through a first feeder line in order to generate plasma between the first electrode and the second electrode;first and second reflection mirrors that are disposed so as to cover the first electrode and the second electrode and suppress radiation from the first electrode and the second electrode;wherein the second electrode is grounded through a second feeder line,a distance from the first electrode to the first reflection mirror is longer than a distance between the first electrode and the second electrode, anda distance from the second electrode to the second reflection mirror is longer than the distance between the first electrode and the second electrode. 2. The heat treatment apparatus according to claim 1, wherein a surface material of the first and second reflection mirrors is gold, aluminum, an aluminum alloy, silver, a silver alloy, or stainless steel. 3. The heat treatment apparatus according to claim 1, wherein the first and second reflection mirrors include coolant channels flowing coolant to cool the reflection mirrors. 4. The heat treatment apparatus according to claim 1, further comprising: quartz plates disposed between the first electrode and the first reflection mirror and between the second electrode and the second reflection mirror in order to prevent contamination of surfaces of the first and second reflection mirrors. 5. The heat treatment apparatus according to claim 1, wherein a base material of the first electrode and the second electrode is graphite. 6. The heat treatment apparatus according to claim 1, wherein each of the first feeder line and the second feeder line is made of graphite. 7. The heat treatment apparatus according to claim 5, wherein each of the first feeder line and the second feeder line is made of graphite. 8. The heat treatment apparatus according to claim 1, wherein the first and second reflection mirrors are formed with a paraboloid of revolution.