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특허 상세정보

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내보내기 페이스북 공유 카카오톡 공유

Heat treatment apparatus that performs defect repair annealing

특허상세정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판) H05B-007/18    H05B-001/02   
출원번호 US-0955020 (2010-11-29)
등록번호 US-9271341 (2016-02-23)
우선권정보 JP-2010-200845 (2010-09-08)
발명자 / 주소
  • Yokogawa, Ken'etsu
  • Miyake, Masatoshi
출원인 / 주소
  • HITACHI HIGH-TECHNOLOGIES CORPORATION
대리인 / 주소
    Baker Botts L.L.P.
인용정보 피인용 횟수 : 1  인용 특허 : 95
초록
▼

Provided is a heat treatment apparatus that even when annealing SiC at high temperature, can exhibit a low heat capacity and perform uniform heating. The heat treatment apparatus includes a pair of parallel plate electrodes, high-frequency power supply that applies a high-frequency voltage to the pair of parallel plate electrodes so as to discharge between the pair of parallel plate electrodes, a temperature measurement instrument that measures the temperature of a sample to be heated which is disposed in the pair of parallel plate electrodes, a gas intr...

대표
청구항
▼

1. A heat treatment apparatus comprising: a heat treatment chamber in which a sample to be heated is heat treated;a planar first electrode disposed in the heat treatment chamber;a planar second electrode, which is facing the first electrode, on which the sample in mounted, disposed in the heat treatment chamber;a high-frequency power supply supplies a high-frequency power to the first electrode through a first feeder line in order to generate plasma between the first electrode and the second electrode;first and second reflection mirrors that are disposed...

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  1. Borowy, Dennis M.; Liu, Qinghua; Zhang, Yu; Kamath, Girish R.; Hoffa, Michael, Wide bandgap semiconductor based power supply assemblies for plasma operating systems and related methods and devices.

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