초록 ▼

A method of transferring a layer from a donor substrate onto a receiving substrate comprises ionic implantation of at least one species into the donor substrate and forming a layer of concentration of the species intended to form microcavities or platelets; bonding the donor substrate with the recei

A method of transferring a layer from a donor substrate onto a receiving substrate comprises ionic implantation of at least one species into the donor substrate and forming a layer of concentration of the species intended to form microcavities or platelets; bonding the donor substrate with the receiving substrate by wafer bonding; and splitting at high temperature to split the layer in contact with the receiving substrate by cleavage, at a predetermined cleavage temperature, at the layer of microcavities or platelets formed in the donor substrate. The method further comprises, after the first implantation step and before the splitting step, ionic implantation of silicon ions into the donor substrate to form a layer of concentration of silicon ions in the donor substrate, the layer of concentration of silicon ions at least partially overlapping the layer of concentration of the species intended to form microcavities or platelets.

대표청구항 ▼

1. A method of transferring a layer from a donor substrate onto a receiving substrate, comprising: implanting at least one species into a first layer region of the donor substrate and forming precursors of platelets and/or microcavities in the first layer region, the first layer region of the donor

1. A method of transferring a layer from a donor substrate onto a receiving substrate, comprising: implanting at least one species into a first layer region of the donor substrate and forming precursors of platelets and/or microcavities in the first layer region, the first layer region of the donor substrate extending horizontally within the donor substrate and extending vertically from a first depth within the donor substrate through a first thickness of the donor substrate;after implanting the at least one species into the first layer region of the donor substrate, implanting silicon ions into a second layer region of the donor substrate, the second layer region of the donor substrate extending horizontally within the donor substrate and extending vertically from a second depth within the donor substrate through a second thickness of the donor substrate, the first layer region of the donor substrate at least partially overlapping the second layer region of the donor substrate in the vertical direction such that at least a portion of the second layer region of the donor substrate is coextensive with and encompasses at least a portion of the first layer region of the donor substrate, the implantation of the silicon ions neutralizing and/or destroying at least some of the precursors of platelets and/or microcavities in the first layer region so as to increase a cleavage temperature required to cause cleavage of the donor substrate along a plane of weakness to be formed therein;after implanting silicon ions into the second layer region of the donor substrate, bonding a face of the donor substrate with a face of the receiving substrate by wafer bonding; andheating the donor substrate, forming at least one of microcavities and platelets from the precursors and forming the plane of weakness in the first layer region of the donor substrate, and splitting the donor substrate by cleavage, at the cleavage temperature, along the plane of weakness. 2. The method of claim 1, wherein the at least one species are implanted into the first layer region of the donor substrate using a first implantation energy, and the silicon ions are implanted into the second layer region of the donor substrate using a second implantation energy, the second implantation energy being higher than the first implantation energy. 3. The method of claim 1, further comprising selecting an implantation dose of the silicon ions in the second layer region of the donor substrate to be sufficiently high to prevent cleavage of the donor substrate until a temperature of the donor substrate reaches more than 500° C. during the heating of the donor substrate. 4. The method of claim 3, further comprising selecting the implantation dose of the silicon ions to be lower than an implantation dose of the at least one species implanted into the first layer region of the donor substrate. 5. The method of claim 1, further comprising selecting the donor substrate to comprise a silicon substrate and selecting the cleavage temperature to be in a range extending from 575° C. to 650° C. 6. The method of claim 1, further comprising selecting the at least one species implanted into the first layer region of the donor substrate from the group consisting of hydrogen and helium. 7. The method of claim 1, further comprising treating the face of the donor substrate and the face of the receiving substrate and rendering the face of the donor substrate and the face of the receiving substrate hydrophobic. 8. The method of claim 1, further comprising selecting the donor substrate to comprise a semiconductor material. 9. The method of claim 3, further comprising selecting the implantation dose of the silicon ions in the second layer region of the donor substrate to be sufficiently high to prevent cleavage of the donor substrate until a temperature of the donor substrate reaches more than 575° C. during the heating of the donor substrate. 10. The method of claim 9, further comprising selecting the implantation dose of the silicon ions to be lower than an implantation dose of the at least one species implanted into the first layer region of the donor substrate. 11. The method of claim 2, further comprising selecting the donor substrate to comprise a silicon substrate and selecting the cleavage temperature to be in a range extending from 575° C. to 650° C. 12. A method of transferring a layer from a donor substrate onto a receiving substrate, comprising: implanting at least one ionic species into a first layer region within the donor substrate and forming precursors of platelets and/or microcavities in the first layer region, the first layer region extending horizontally within the donor substrate and extending vertically from a first depth from a face of the donor substrate through a first thickness of the donor substrate, the at least one ionic species comprising at least one ion configured to generate defects within the donor substrate upon heating the donor substrate;implanting silicon ions into a second layer region within the donor substrate, the second layer region extending horizontally within the donor substrate and extending vertically from a second depth from the face of the donor substrate through a second thickness of the donor substrate, the second layer region at least partially overlapping the first layer region in the vertical direction such that at least a portion of the second layer region of the donor substrate is coextensive with and encompasses at least a portion of the first layer region of the donor substrate, the implantation of the silicon ions neutralizing and/or destroying at least some of the precursors of platelets and/or microcavities in the first layer region so as to increase a cleavage temperature required to cause cleavage of the donor substrate along the first layer region;bonding a face of the donor substrate with a face of the receiving substrate using a wafer bonding process; andheating the donor substrate and causing formation of microcavities or platelets from the precursors in the donor substrate along the first layer region and an increase in a bonding energy between the face of the donor substrate and the face of the receiving substrate, and, upon reaching a cleavage temperature, cleaving the donor substrate along the first layer region and between the microcavities or platelets. 13. The method of claim 12, further comprising implanting the silicon ions into the second layer region within the donor substrate before bonding the face of the donor substrate with the face of the receiving substrate using the wafer bonding process. 14. The method of claim 12, wherein the at least one ionic species are implanted into the first layer region of the donor substrate using a first implantation energy, and the silicon ions are implanted into the second layer region of the donor substrate using a second implantation energy, the second implantation energy being higher than the first implantation energy. 15. The method of claim 12, further comprising selecting an implantation dose of the silicon ions in the second layer region of the donor substrate to be sufficiently high to prevent cleavage of the donor substrate until a temperature of the donor substrate reaches more than 500° C. during the heating of the donor substrate. 16. The method of claim 15, wherein the implantation dose of the silicon ions used during implantation of the silicon ions into the second layer region is lower than an implantation dose of the at least one ionic species used during implantation of the at least one ionic species into the first layer region. 17. The method of claim 16, further comprising selecting the donor substrate to comprise a silicon substrate, and selecting the cleavage temperature to be in a range extending from 575° C. to 650° C. 18. The method of claim 12, further comprising selecting the donor substrate to comprise a silicon substrate, and selecting the cleavage temperature to be in a range extending from 575° C. to 650° C. 19. The method of claim 12, wherein the second layer region completely overlaps the first layer region. 20. The method of claim 12, wherein the second depth is less than the first depth.