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An electronic chip including a semiconductor substrate (1) covered with an insulating layer (4) including metal interconnection levels (3) and interconnection pillars (10) connected to said metal interconnection levels (3), said pillars (110) forming regions (111) protruding from the upper surface o

An electronic chip including a semiconductor substrate (1) covered with an insulating layer (4) including metal interconnection levels (3) and interconnection pillars (10) connected to said metal interconnection levels (3), said pillars (110) forming regions (111) protruding from the upper surface of said insulating layer (4) and capable of forming an electric contact, wherein said pillars (110) have a built-in portion (115) in a housing formed across the thickness of at least said insulating layer (4).

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1. An electronic chip comprising a semiconductor substrate covered with an insulating layer comprising metal interconnection levels and at least one interconnection pillar connected to said metal interconnection levels, said at least one pillar having a first portion protruding from an upper surface

1. An electronic chip comprising a semiconductor substrate covered with an insulating layer comprising metal interconnection levels and at least one interconnection pillar connected to said metal interconnection levels, said at least one pillar having a first portion protruding from an upper surface of said insulating layer, and configured to form an electric contact, wherein said at least one pillar, has a second portion that extends through only a portion of a thickness of said insulating layer, or through the thickness of said insulating layer and through only a portion of a thickness of said semiconductor substrate, a housing including a shoulder at an opening of the housing and a barrier layer deposited on the shoulder. 2. The electronic chip of claim 1, wherein the housing is formed through a fraction of the thickness of said insulating layer. 3. The electronic chip of claim 1, wherein the housing crosses said insulating layer and a portion of the substrate. 4. The electronic chip of claim 1, wherein the insulating layer comprises a metal layer crossed by said housing. 5. The electronic chip of claim 3, wherein a cross-section of the built-in portion of the interconnection pillar is smaller than a cross-section of the protruding portion of said pillar. 6. The electronic chip of claim 2, wherein a cross-section of the built-in portion of the interconnection pillar is identical to a cross-section of the protruding portion of said pillar. 7. The electronic chip of claim 3, wherein the housing has an insulating layer interposed between, on the one hand, the material of the pillar and, on the other hand, the insulating layer and the substrate. 8. The electronic chip of claim 4, wherein the pillar has a shoulder coming into contact with said metal layer. 9. The electronic chip of claim 8, wherein a depth of the housing ranges between 20% and 50% of the height of the protruding portion of the pillar. 10. A method for manufacturing an electronic chip comprising a semiconductor substrate covered with an insulating layer comprising metal interconnection levels, wherein at least one housing is formed to extend through only a portion of a thickness of said insulating layer, or through the thickness of said insulating layer and through only a portion of a thickness of said semiconductor substrate, the forming of said housing exposing a fraction of said metal interconnection levels, and wherein a first portion of an interconnection pillar is formed inside of each housing, said first portion of pillar coming into contact with said fraction of said metal interconnection levels, said pillar having a second portion protruding from an upper surface of said insulating layer, the housing including a shoulder at an opening of the housing and a barrier layer deposited on the shoulder. 11. The method of claim 10, wherein the housing is formed by completely crossing the thickness of said insulating layer. 12. The method of claim 11, wherein an insulating material layer is deposited in said housing before the interconnection pillar is formed. 13. The method of claim 10, wherein the housing is formed by crossing a fraction only of the thickness of said insulating layer. 14. An integrated circuit chip comprising: a substrate covered with an insulating layer that includes at least one metal interconnection level; andat least one interconnection pillar connected to the metal interconnection level, the interconnection pillar including exposed first portion that extends above the insulating layer and a second portion in a well in the insulating layer, wherein the second portion extends through only a portion of a thickness of the insulating layer without contacting the substrate, or through the thickness of the insulating layer and through only a portion of a thickness of the substrate, wherein the second portion is integral with the first portion. 15. An integrated circuit chip as defined in claim 14, further comprising a layer of insulating material in the well between the interconnection pillar and the insulating layer. 16. An integrated circuit chip as defined in claim 15, further comprising a diffusion barrier in the well over the layer of insulating material. 17. An integrated circuit chip as defined in claim 16, further comprising a seed layer in the well over the diffusion barrier. 18. An integrated circuit chip as defined in claim 14, wherein the well is formed through a fraction of a thickness of the insulating layer. 19. An integrated circuit chip as defined in claim 14, wherein the well crosses the insulating layer and a portion of the substrate. 20. An integrated circuit chip as defined in claim 14, wherein a cross-section of the built-in portion of the interconnection pillar is smaller than a cross-section of the exposed portion of the interconnection pillar. 21. An integrated circuit chip as defined in claim 14, wherein the interconnection pillar includes a shoulder that contacts the metal interconnection level. 22. A method for making an integrated circuit chip using a substrate covered with an insulating layer that includes at least one metal interconnection level, the method comprising: forming a well in the insulating layer; andforming an interconnection pillar in the well in contact with the metal interconnection layer, the interconnection pillar including an exposed portion above the insulating layer and a built-in portion in the well, wherein the built-in portion is formed to extend through only a portion of a thickness of the insulating layer without contacting the substrate, or through the thickness of the insulating layer and through only a fraction of a thickness of the substrate, and wherein the build-in portion is integral with the exposed portion. 23. A method for making an integrated circuit chip as defined in claim 22, further comprising forming a layer of insulating material in the well between the interconnection pillar and the insulating layer. 24. A method for making an integrated circuit chip as defined in claim 23, further comprising forming a diffusion barrier in the well over the layer of insulating material. 25. A method for making an integrated circuit chip as defined in claim 24, further comprising forming a seed layer in the well over the diffusion barrier. 26. A method for making an integrated circuit chip as defined in claim 22, wherein forming the interconnection pillar comprises electrodeposition of copper in the well.