Susceptor heater and method of heating a substrate
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
F27D-011/00
H01L-021/67
H01L-021/687
F28D-015/00
출원번호
US-0563044
(2014-12-08)
등록번호
US-9299595
(2016-03-29)
발명자
/ 주소
Dunn, Todd
Alokozai, Fred
Winkler, Jerry
Halpin, Michael
출원인 / 주소
ASM IP Holding B.V.
대리인 / 주소
Snell & Wilmer LLP
인용정보
피인용 횟수 :
41인용 특허 :
209
초록▼
A wafer processing apparatus may include a susceptor having a top side and a backside, a susceptor heater having a spacing member and a heating member, a shim removably mounted between the susceptor and the susceptor heater, a cavity formed by the susceptor backside, the susceptor heater, and the sh
A wafer processing apparatus may include a susceptor having a top side and a backside, a susceptor heater having a spacing member and a heating member, a shim removably mounted between the susceptor and the susceptor heater, a cavity formed by the susceptor backside, the susceptor heater, and the shim, a fluid inlet communicating with the cavity, and a plurality of fluid outlets communicating with the cavity.
대표청구항▼
1. A susceptor heater assembly comprising: a heating member having a top surface;a fluid manifold connected to the heating member;a shim removably mounted on the heating member;a susceptor having a bottom surface, the susceptor connected to the shim;a fluid line inlet traversing the heating member;a
1. A susceptor heater assembly comprising: a heating member having a top surface;a fluid manifold connected to the heating member;a shim removably mounted on the heating member;a susceptor having a bottom surface, the susceptor connected to the shim;a fluid line inlet traversing the heating member;a fluid line in fluid communication with a cavity between the bottom surface and the top surface; anda heat conductive fluid introduced through the fluid line inlet to provide heat conductive fluid to the cavity. 2. The susceptor heater of claim 1, wherein the fluid manifold comprises an inlet port and at least one outlet port. 3. The susceptor heater of claim 2, wherein the at least one manifold outlet port is positioned at an angle between 90 degrees and 180 degrees from the inlet port. 4. The susceptor heater of claim 2, wherein the at least one outlet port is three outlet ports positioned about 120 degrees apart from each other. 5. The susceptor heater of claim 1, wherein the fluid manifold positions a susceptor on the susceptor heater. 6. The susceptor heater of claim 1, further comprising a spacing portion. 7. The susceptor heater of claim 1, wherein the cavity further comprises a variable cross-sectional area. 8. The susceptor heater of claim 1, wherein the heat conductive fluid is selected from the group consisting of helium, nitrogen, and hydrogen. 9. The susceptor heater of claim 1, further comprising at least one fluid line exit positioned radially outside of the fluid line inlet. 10. The susceptor heater of claim 9, wherein each of the at least one fluid line exits surrounds a wafer lift pin. 11. The susceptor heater of claim 1, wherein each of the at least one fluid line exits is in fluid communication with a slot in the heating member. 12. The susceptor heater of claim 11, wherein the slot is in fluid communication with an outlet port. 13. The susceptor heater of claim 1, further comprising a heating element disposed within the heating member radially inward from the shim. 14. A wafer processing apparatus comprising: a susceptor having a top side and a backside;a susceptor heater having a heating member;a shim removably mounted between the susceptor and the susceptor heater;a cavity formed by the susceptor backside, the susceptor heater, and the shim;a fluid inlet communicating with the cavity, the fluid line configured to provide heat-conductive fluid to the cavity; andat least one fluid outlet communicating with the cavity. 15. The wafer processing apparatus of claim 14, further comprising a heat conducting fluid flowing through the fluid inlet, the cavity, and the at least one fluid outlet. 16. The wafer processing apparatus of claim 15, wherein the heat conducting fluid is selected from the group consisting of helium, nitrogen, and hydrogen. 17. The wafer processing apparatus of claim 15, wherein a heating element is disposed within the susceptor heater and provides thermal energy to the heat conducting fluid. 18. The wafer processing apparatus of claim 14, wherein a fluid flows radially outward from the fluid inlet to the plurality of fluid outlets through the cavity. 19. A method of heating a susceptor in a wafer processing chamber comprising the method of: providing a susceptor having a top side and a backside, a susceptor heater having a heating member, a shim removably mounted between the susceptor and the susceptor heater, a cavity formed by the susceptor backside, the susceptor heater, and the shim, and a fluid inlet communicating with the cavity;heating the heating element; and,flowing a heat conductive fluid through the fluid inlet, the cavity, and at least one fluid outlet. 20. The method of claim 19, wherein the heat conductive fluid is selected from the group consisting of helium, nitrogen, and hydrogen. 21. The method of claim 19, wherein the fluid inlet orients the fluid flow within the cavity. 22. The method of claim 19, wherein the heat conductive fluid is cooled prior to the flowing step to reduce the susceptor temperature.
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