Materials and methods for the preparation of nanocomposites
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
C01B-019/00
C09K-011/56
B82Y-030/00
B82Y-040/00
C09K-011/02
C09K-011/88
C30B-007/00
C30B-029/40
C30B-029/46
C30B-029/60
H01L-035/16
출원번호
US-0266079
(2010-04-23)
등록번호
US-9346998
(2016-05-24)
국제출원번호
PCT/US2010/032246
(2010-04-23)
§371/§102 date
20120119
(20120119)
국제공개번호
WO2010/124212
(2010-10-28)
발명자
/ 주소
Talapin, Dmitri V.
Kovalenko, Maksym V.
Lee, Jong-Soo
Jiang, Chengyang
출원인 / 주소
THE UNIVERSITY OF CHICAGO
대리인 / 주소
Marshall, Gerstein & Borun LLP
인용정보
피인용 횟수 :
1인용 특허 :
40
초록▼
Disclosed herein is an isolable colloidal particle comprising a nanoparticle and an inorganic capping agent bound to the surface of the nanoparticle, a solution of the same, a method for making the same from a biphasic solvent mixture, and the formation of structures and solids from the isolable col
Disclosed herein is an isolable colloidal particle comprising a nanoparticle and an inorganic capping agent bound to the surface of the nanoparticle, a solution of the same, a method for making the same from a biphasic solvent mixture, and the formation of structures and solids from the isolable colloidal particle. The process can yield photovoltaic cells, piezoelectric crystals, thermoelectric layers, optoelectronic layers, light emitting diodes, ferroelectric layers, thin film transistors, floating gate memory devices, imaging devices, phase change layers, and sensor devices.
대표청구항▼
1. An isolable colloidal particle comprising an inorganic capping agent comprising a Zintl ion, said inorganic capping agent bound to a surface of a nanoparticle and substantially free of an organic capping agent. 2. The particle of claim 1, wherein the inorganic capping agent is selected from a gro
1. An isolable colloidal particle comprising an inorganic capping agent comprising a Zintl ion, said inorganic capping agent bound to a surface of a nanoparticle and substantially free of an organic capping agent. 2. The particle of claim 1, wherein the inorganic capping agent is selected from a group consisting of a polyatomic anion, a soluble metal chalcogenide, a soluble polyatomic metal chalcogenide anion, and a mixture thereof. 3. The particle of claim 1, wherein the inorganic capping agent further comprises an ion selected from the group consisting of As33−, As42−, As53−, As73−, As113−, AsS33−, As2Se63−, As2Te63−, As10Te32−, Au2Te42−, Au3Te43−, Bi33−, Bi42−, Bi53−, Bi73−, GaTe2−, Ge92−, Ge94−, Ge2S64−, HgSe22−, Hg3Se42−, In2Se42−, In2Te42−, Ni5Sb174−, Pb52−, Pb74−, Pb94−, Pb2Sb22−, Sb33−, Sb42−, Sb73−, SbSe43−, SbSe45−, SbTe45−, Sb2Se3−, Sb2Te54−, Sb2Te74−,Sb4Te44−, Sb9Te63−, Se22−, Se32−, Se42−, Se5,62−, Se62−, Sn42−, Sn52−, Sn93−, Sn94−, SnS44−, SnSe44−, SnTe44−, SnS4Mn25−, Sn2S64−, Sn2Se64−, Sn2Te64−, Sn2Bi22−, Sn8Sb3−, Te22−, Te32−, Te42−, Tl2Te22−, TlSn83−, TlSn85−, TlSn93−, TlTe22−, and a mixture thereof. 4. The particle of claim 1, wherein the inorganic capping agent further comprises a metal selected from the group consisting of a transition metal, a lanthanide, an actinide, a main group metal, a metalloid, and a mixture thereof. 5. The particle of claim 1, wherein the inorganic capping agent further comprises a soluble metal chalcogenide selected from the group consisting of molecular compounds derived from CuInSe2, CuInxGa1-xSe2, Ga2Se3, In2Se3, In2Te3, Sb2S3, Sb2Se3, Sb2Te3, ZnTe, and a mixture thereof. 6. The particle of claim 1, wherein the nanoparticle is selected from the group consisting of a nanocrystal, a nanorod, a nanowire, and a mixture thereof. 7. The particle of claim 1, wherein the nanoparticle is selected from a group consisting of AN, AlP, AlAs, Ag, Au, Bi, Bi2S3, Bi2Se3, Bi2Te3, CdS, CdSe, CdTe, Co, CoPt, CoPt3, Cu, Cu2S, Cu2Se, CuInSe2, CuIn(1-x)Gax(S,Se)2, Cu2ZnSn(S,Se)4, Fe, FeO, Fe2O3, Fe3O4, FePt, GaN, GaP, GaAs, GaSb, GaSe, Ge, HgS, HgSe, HgTe, InN, InP, InSb, InAs, Ni, PbS, PbSe, PbTe, Pd, Pt, Ru, Rh, Si, Sn, ZnS, ZnSe, ZnTe, Au/PbS, Au/PbSe, Au/PbTe, Ag/PbS, Ag/PbSe, Ag/PbTe, Pt/PbS, Pt/PbSe, Pt/PbTe, Au/CdS, Au/CdSe, Au/CdTe, Ag/CdS, Ag/CdSe, Ag/CdTe, Pt/CdS, Pt/CdSe, Pt/CdTe, Au/FeO, Au/Fe2O3, Au/Fe3O4, Pt/FeO, Pt/Fe2O3, Pt/Fe3O4, FePt/PbS, FePt/PbSe, FePt/PbTe, FePt/CdS, FePt/CdSe, FePt/CdTe, CdSe/CdS, CdSe/ZnS, InP/CdSe, InP/ZnS, InP/ZnSe, InAs/CdSe, InAs/ZnSe, and a mixture thereof.
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