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[미국특허] Gallium nitride based light emitting diode 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-033/32
  • H01L-033/06
  • H01L-033/00
  • H01L-033/12
출원번호 US-0555979 (2014-11-28)
등록번호 US-9362454 (2016-06-07)
우선권정보 KR-10-2003-0048993 (2003-07-18)
발명자 / 주소
  • Kim, Seong Jae
출원인 / 주소
  • LG Innotek Co., Ltd.
대리인 / 주소
    Birch, Stewart, Kolasch & Birch, LLP
인용정보 피인용 횟수 : 0  인용 특허 : 106

초록 ▼

A light emitting diode includes a first conductive type semiconductor layer; at least one InxGa1−xN layer (0x0.2) on the first conductive type semiconductor layer; an active layer directly on the at least one InxGa1−xN layer(0x0.2); a second conductive type semiconductor layer on the active layer; a

대표청구항 ▼

1. A light emitting diode comprising: an un-doped GaN layer having a thickness of 1 μm ˜3 μm;a first conductive type semiconductor layer on the un-doped GaN layer;at least one InxGa1−xN layer (0

이 특허에 인용된 특허 (106) 인용/피인용 타임라인 분석

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