Methods and materials for anchoring gapfill metals
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
C23C-018/18
B32B-015/04
B32B-003/30
H01L-021/768
C23C-018/52
출원번호
US-0515816
(2014-10-16)
등록번호
US-9382627
(2016-07-05)
발명자
/ 주소
Kolics, Artur
출원인 / 주소
Lam Research Corporation
대리인 / 주소
Beyer Law Group LLP
인용정보
피인용 횟수 :
0인용 특허 :
25
초록▼
One aspect of the present invention includes a method of fabricating an electronic device. According to one embodiment, the method comprises providing a substrate having dielectric oxide surface areas adjacent to electrically conductive surface areas, chemically bonding an anchor compound with the d
One aspect of the present invention includes a method of fabricating an electronic device. According to one embodiment, the method comprises providing a substrate having dielectric oxide surface areas adjacent to electrically conductive surface areas, chemically bonding an anchor compound with the dielectric oxide surface areas so as to form an anchor layer, initiating the growth of a metal using the electrically conductive surface areas and growing the metal so that the anchor layer also bonds with the metal. The anchor compound has at least one functional group capable of forming a chemical bond with the oxide surface and has at least one functional group capable of forming a chemical bond with the metal. Another aspect of the present invention is an electronic device. A third aspect of the present invention is a solution comprising the anchor compound.
대표청구항▼
1. A solution to increase the bonding between an oxide surface and a gapfill metal, the solution comprising: an amount of water-soluble solvent;an amount of anchor compound having at least one functional group capable of forming a chemical bond with the oxide surface and having at least one function
1. A solution to increase the bonding between an oxide surface and a gapfill metal, the solution comprising: an amount of water-soluble solvent;an amount of anchor compound having at least one functional group capable of forming a chemical bond with the oxide surface and having at least one functional group capable of forming a chemical bond with the gapfill metal, wherein the anchor compound comprises inorganic oxoanions having the generic formula AXOYZ−wherein, A is a chemical element, O is oxygen, X is an integer, Y is an integer, and Z is an integer; andan amount of water. 2. The solution of claim 1, wherein the anchor compound comprises an inorganic oxoanion, a phosphate, a phosphite, a phosphonate, an amine, an imine, a cyanide, or combinations thereof. 3. The solution of claim 1, wherein the anchor compound comprises inorganic oxoanions, amines, imines, cyanides, functional groups that form complexes with ions of the gapfill metal, functional groups that adsorb strongly on the gapfill metal, or combinations thereof. 4. The solution of claim 1, wherein the solution further comprises dimethylsulfoxide, formamide, acetonitrile, alcohol, or mixtures thereof. 5. A solution to increase the bonding between an oxide surface and a gapfill metal, the solution comprising: an amount of water-soluble solvent;an amount of anchor compound having at least one functional group capable of forming a chemical bond with the oxide surface and having at least one functional group capable of forming a chemical bond with the gapfill metal, wherein the anchor compound comprises mono-alkoxy silane, di-alkoxy silane, or tri-alkoxy silane and at least one member from the group consisting of an amine group, an imine group, a carboxylate group, a phosphate group, a phosphonate group, and an epoxy group; andan amount of water. 6. A solution comprising: a solvent;an anchor compound having at least one functional group capable of forming a chemical bond with an oxide surface and having at least one functional group capable of forming a chemical bond with a gapfill metal, wherein the anchor compound has the general formula (R1—O)V-nMGn whereM is germanium, hafnium, indium, silicon, tantalum, tin, titanium, or tungsten;G is a functional group capable of forming the chemical bond with the metal;R1—O is the functional group capable of forming the chemical bond with the oxide surface, O is oxygen;V is the valence of M; andn is an integer from 1 to V-1;a reducing agent for electroless deposition; andions of one or more metals for electroless deposition of the gapfill metal. 7. The solution of claim 6, wherein the anchor compound comprises an inorganic oxoanion, a phosphate, a phosphite, a phosphonate, an amine, an imine, a cyanide, or combinations thereof. 8. The solution of claim 6, wherein the anchor compound comprises inorganic oxoanions, amines, imines, cyanides, functional groups that form complexes with ions of the gapfill metal, functional groups that adsorb strongly on the gapfill metal, or combinations thereof. 9. The solution of claim 6, wherein the solution further comprises dimethylsulfoxide, formamide, acetonitrile, alcohol, or mixtures thereof. 10. A solution comprising: a solvent;an anchor compound having at least one functional group capable of forming a chemical bond with an oxide surface and having at least one functional group capable of forming a chemical bond with a gapfill metal, wherein the anchor compound comprises inorganic oxoanions having the generic formula AXOYZ− wherein A is a chemical element, O is oxygen, X is an integer, Y is an integer, and Z is an integer;a reducing agent for electroless deposition; andions of one or more metals for electroless deposition of the gapfill metal. 11. A solution comprising: a solvent;an anchor compound having at least one functional group capable of forming a chemical bond with an oxide surface and having at least one functional group capable of forming a chemical bond with a gapfill metal, wherein the anchor compound comprises mono-alkoxy silane, di-alkoxy silane, or tri-alkoxy silane and at least one member from the group consisting of an amine group, an imine group, a carboxylate group, a phosphate group, a phosphonate group, and an epoxy group;a reducing agent for electroless deposition; andions of one or more metals for electroless deposition of a gapfill metal.
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이 특허에 인용된 특허 (25)
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