$\require{mediawiki-texvc}$

연합인증

연합인증 가입 기관의 연구자들은 소속기관의 인증정보(ID와 암호)를 이용해 다른 대학, 연구기관, 서비스 공급자의 다양한 온라인 자원과 연구 데이터를 이용할 수 있습니다.

이는 여행자가 자국에서 발행 받은 여권으로 세계 각국을 자유롭게 여행할 수 있는 것과 같습니다.

연합인증으로 이용이 가능한 서비스는 NTIS, DataON, Edison, Kafe, Webinar 등이 있습니다.

한번의 인증절차만으로 연합인증 가입 서비스에 추가 로그인 없이 이용이 가능합니다.

다만, 연합인증을 위해서는 최초 1회만 인증 절차가 필요합니다. (회원이 아닐 경우 회원 가입이 필요합니다.)

연합인증 절차는 다음과 같습니다.

최초이용시에는
ScienceON에 로그인 → 연합인증 서비스 접속 → 로그인 (본인 확인 또는 회원가입) → 서비스 이용

그 이후에는
ScienceON 로그인 → 연합인증 서비스 접속 → 서비스 이용

연합인증을 활용하시면 KISTI가 제공하는 다양한 서비스를 편리하게 이용하실 수 있습니다.

Methods and materials for anchoring gapfill metals

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C23C-018/18
  • B32B-015/04
  • B32B-003/30
  • H01L-021/768
  • C23C-018/52
출원번호 US-0515816 (2014-10-16)
등록번호 US-9382627 (2016-07-05)
발명자 / 주소
  • Kolics, Artur
출원인 / 주소
  • Lam Research Corporation
대리인 / 주소
    Beyer Law Group LLP
인용정보 피인용 횟수 : 0  인용 특허 : 25

초록

One aspect of the present invention includes a method of fabricating an electronic device. According to one embodiment, the method comprises providing a substrate having dielectric oxide surface areas adjacent to electrically conductive surface areas, chemically bonding an anchor compound with the d

대표청구항

1. A solution to increase the bonding between an oxide surface and a gapfill metal, the solution comprising: an amount of water-soluble solvent;an amount of anchor compound having at least one functional group capable of forming a chemical bond with the oxide surface and having at least one function

이 특허에 인용된 특허 (25)

  1. Sinha, Nishant, Activation of oxides for electroless plating.
  2. Kolics, Artur; Petrov, Nicolai; Ting, Chiu; Ivanov, Igor, Activation-free electroless solution for deposition of cobalt and method for deposition of cobalt capping/passivation layer on copper.
  3. Bokisa George S. (North Olmsted OH) Willis William J. (North Royalton OH), Aqueous electroless plating solutions.
  4. Yakobson,Eric; Hurtubise,Richard; Witt,Christian; Chen,Qingyun, Capping of metal interconnects in integrated circuit electronic devices.
  5. Yamamoto Hiroshi (Yuki JPX) Shimazaki Takeshi (Hitachi JPX) Kuramochi Kazuichi (Shimodate JPX), Catalyst for electroless plating.
  6. Lavoie,Adrien R.; Fajardo,Arnel; Dubin,Valery M., Catalytic nucleation monolayer for metal seed layers.
  7. Haixing Zheng ; Su-Jen Ting ; Cheng-Jye Chu, Composition useful for treating metal surfaces.
  8. Tench, D. Morgan; Warren, Jr., Leslie F.; White, John T., Controlled plating on reactive metals.
  9. Stewart, Michael P.; Weidman, Timothy W.; Shanmugasundram, Arulkumar; Eaglesham, David J., Electroless deposition process on a silicon contact.
  10. Stewart, Michael P.; Weidman, Timothy W.; Shanmugasundram, Arulkumar; Eaglesham, David J., Electroless deposition process on a silicon contact.
  11. Jiang Tongbi ; Li Li, Method and apparatus for electroless plating a contact pad.
  12. Kolics, Artur; Petrov, Nicolai; Ting, Chiu; Ivanov, Igor C., Method for electroless deposition of phosphorus-containing metal films onto copper with palladium-free activation.
  13. Dubin, Valery, Method for making interconnects and diffusion barriers in integrated circuits.
  14. Feldstein Nathan (63 Hemlock Cir. Princeton NJ 08540), Method for rendering a non-platable semiconductor substrate platable.
  15. Burrell,Lloyd G.; Davis,Charles R.; Goldblatt,Ronald D.; Landers,William F.; Mehta,Sanjay C., Method of fabricating a wire bond pad with Ni/Au metallization.
  16. Ritscher James S. (Marietta OH) Yang Wei T. (Belle Mead NJ) Omietanski George M. (Marietta OH) Ocheltree Robert L. (Pennsboro WV) Malson Earl E. (New Martinsville WV), Noble metal supported on a base metal catalyst.
  17. Goosey, Martin T.; Bains, Narinder Singh, Plating catalysts and electronic packaging substrates plated therewith.
  18. Zieliene, Albina; Vaskelis, Algirdas; Norkus, Eugenijus, Plating solutions for electroless deposition of ruthenium.
  19. Joyce ; III Samuel F. (Ballwin MO) Morgan Albert W. (Collinsville IL) Touchette Norman W. (St. Louis MO) Vanderlinde William (St. Louis MO), Reaction products of metal oxides and salts with phosphorus compounds.
  20. Farkas, Janos; Kordic, Srdjan; Goldberg, Cindy, Semiconductor device including a coupled dielectric layer and metal layer, method of fabrication thereof, and material for coupling a dielectric layer and a metal layer in a semiconductor device.
  21. Biler,Martin, Solid electrolytic capacitor containing a protective adhesive layer.
  22. Kolics, Artur; Petrov, Nicolai; Ting, Chiu; Ivanov, Igor C., Solution composition and method for electroless deposition of coatings free of alkali metals.
  23. Ishikawa Futoshi (Nagoya JPX) Kondo Koji (Chiryu JPX) Irie Masahiro (Kasuga JPX), Solution for catalytic treatment, method of applying catalyst to substrate and method of forming electrical conductor.
  24. Mayer, Steven T.; Rea, Mark L.; Hill, Richard S.; Kepten, Avishai; Stowell, R. Marshall; Webb, Eric G., Topography reduction and control by selective accelerator removal.
  25. Dubin Valery M. (Cupertino CA) Schacham-Diamand Yosi (Ithaca NY) Zhao Bin (Irvine CA) Vasudev Prahalad K. (Austin TX) Ting Chiu H. (Saratoga CA), Use of cobalt tungsten phosphide as a barrier material for copper metallization.
섹션별 컨텐츠 바로가기

AI-Helper ※ AI-Helper는 오픈소스 모델을 사용합니다.

AI-Helper 아이콘
AI-Helper
안녕하세요, AI-Helper입니다. 좌측 "선택된 텍스트"에서 텍스트를 선택하여 요약, 번역, 용어설명을 실행하세요.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.

선택된 텍스트