Peeling apparatus and manufacturing apparatus of semiconductor device
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/58
H01L-027/12
B32B-043/00
H01L-021/67
H01L-021/683
H01L-027/15
H01L-033/00
H01L-031/18
H01L-031/20
출원번호
US-0801093
(2015-07-16)
등록번호
US-9397126
(2016-07-19)
우선권정보
JP-2006-266531 (2006-09-29)
발명자
/ 주소
Eguchi, Shingo
Monma, Yohei
Tani, Atsuhiro
Hirosue, Misako
Hashimoto, Kenichi
Hosaka, Yasuharu
출원인 / 주소
Semiconductor Energy Laboratory Co., Ltd.
대리인 / 주소
Robinson Intellectual Property Law Office
인용정보
피인용 횟수 :
1인용 특허 :
43
초록▼
To eliminate electric discharge when an element formation layer including a semiconductor element is peeled from a substrate used for manufacturing the semiconductor element, a substrate over which an element formation layer and a peeling layer are formed and a film are made to go through a gap betw
To eliminate electric discharge when an element formation layer including a semiconductor element is peeled from a substrate used for manufacturing the semiconductor element, a substrate over which an element formation layer and a peeling layer are formed and a film are made to go through a gap between pressurization rollers. The film is attached to the element formation layer between the pressurization rollers, bent along a curved surface of the pressurization roller on a side of the pressurization rollers, and collected. Peeling is generated between the element formation layer and the peeling layer and the element formation layer is transferred to the film. Liquid is sequentially supplied by a nozzle to a gap between the element formation layer and the peeling layer, which is generated by peeling, so that electric charge generated on surfaces of the element formation layer and the peeling layer is diffused by the liquid.
대표청구항▼
1. A method for manufacturing a display module, comprising: forming a peeling layer on a substrate;forming an element formation layer over the peeling layer, the element formation layer comprising a semiconductor element;attaching a film to the element formation layer via an adhesive layer by pressi
1. A method for manufacturing a display module, comprising: forming a peeling layer on a substrate;forming an element formation layer over the peeling layer, the element formation layer comprising a semiconductor element;attaching a film to the element formation layer via an adhesive layer by pressing the film to the element formation layer with a roller;bending the film, whereby peeling the element formation layer from the substrate;supplying a liquid to a portion where the peeling occurs, whereby wetting the element formation layer and the peeling layer at an edge portion of the peeling; andseparating the element formation layer from the substrate. 2. A method for manufacturing a display module, comprising: forming a metal film or an alloy film on a substrate;forming an oxide film on and in contact with the metal film or the alloy film, whereby forming a peeling layer comprising the oxide film and one of the metal film and the alloy film;forming an element formation layer over the peeling layer, the element formation layer comprising a semiconductor element;attaching a film to the element formation layer via an adhesive layer by pressing the film to the element formation layer with a roller;bending the film, whereby peeling the element formation layer from the substrate,supplying a liquid to a portion where the peeling occurs, whereby wetting the element formation layer and the peeling layer at an edge portion of the peeling; andseparating the element formation layer from the substrate. 3. The method for manufacturing a display module according to claim 2, wherein a surface of the metal film or of the alloy film is oxidized when the oxide film is formed. 4. The method for manufacturing a display module according to claim 2, wherein the metal film of the alloy film comprises a metal selected from tungsten, molybdenum, titanium, tantalum, niobium, nickel, cobalt, zirconium, zinc, ruthenium, rhodium, palladium, osmium, and iridium. 5. A method for manufacturing a display module, comprising: forming a tungsten film on a substrate;forming a silicon oxide film on the tungsten film, whereby forming a peeling layer comprising the silicon oxide film and the tungsten film;forming an element formation layer over the peeling layer, the element formation layer comprising a semiconductor element;attaching a film to the element formation layer via an adhesive layer by pressing the film to the element formation layer with a roller;bending the film, whereby peeling the element formation layer from the substrate;supplying a liquid to a portion where the peeling occurs, whereby wetting the element formation layer and the peeling layer at an edge portion of the peeling; andseparating the element formation layer from the substrate. 6. The method for manufacturing a display module according to claim 5, wherein a surface of the tungsten film is oxidized when the silicon oxide film is formed. 7. The method for manufacturing a display module according to claim 1, further comprising forming a groove in the element formation layer, wherein peeling is generated at an interface between the element formation layer and the peeling layer in the groove. 8. The method for manufacturing a display module according to claim 2, further comprising forming a groove in the element formation layer, wherein peeling is generated at an interface between the element formation layer and the peeling layer in the groove. 9. The method for manufacturing a display module according to claim 5, further comprising forming a groove in the element formation layer, wherein peeling is generated at an interface between the element formation layer and the peeling layer in the groove. 10. The method for manufacturing a display module according to claim 7, wherein the groove is formed by laser light irradiation. 11. The method for manufacturing a display module according to claim 8, wherein the groove is formed by laser light irradiation. 12. The method for manufacturing a display module according to claim 9, wherein the groove is formed by laser light irradiation. 13. The method for manufacturing a display module according to claim 1, wherein the roller bends the film. 14. The method for manufacturing a display module according to claim 2, wherein the roller bends the film. 15. The method for manufacturing a display module according to claim 5, wherein the roller bends the film. 16. The method for manufacturing a display module according to claim 1, wherein peeling occurs between the element formation layer and the peeling layer. 17. The method for manufacturing a display module according to claim 2, wherein peeling occurs between the element formation layer and the peeling layer. 18. The method for manufacturing a display module according to claim 5, wherein peeling occurs between the element formation layer and the peeling layer. 19. The method for manufacturing a display module according to claim 1, wherein the film is a supporting substrate part of the display module. 20. The method for manufacturing a display module according to claim 2, wherein the film is a supporting substrate part of the display module. 21. The method for manufacturing a display module according to claim 5, wherein the film is a supporting substrate part of the display module. 22. The method for manufacturing a display module according to claim 1, wherein the liquid is pure water. 23. The method for manufacturing a display module according to claim 2, wherein the liquid is pure water. 24. The method for manufacturing a display module according to claim 5, wherein the liquid is pure water.
Shimoda, Tatsuya; Inoue, Satoshi; Miyazawa, Wakao, Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device and liquid crystal display device produced by the same.
Shimoda, Tatsuya; Inoue, Satoshi; Miyazawa, Wakao, Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same.
Shimoda,Tatsuya; Inoue,Satoshi; Miyazawa,Wakao, Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same.
Shimoda,Tatsuya; Inoue,Satoshi; Miyazawa,Wakao, Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same.
Okuyama, Futoshi; Shinba, Yoichi; Hayashi, Tetsuya; Akamatsu, Takayoshi, Laminated member for circuit board, method and apparatus for manufacturing of circuit board.
Watanabe, Ryosuke; Takahashi, Hidekazu; Tsurume, Takuya; Arai, Yasuyuki; Watanabe, Yasuko; Higuchi, Miyuki, Laminating system, IC sheet, roll of IC sheet, and method for manufacturing IC chip.
Yamazaki,Shunpei; Takayama,Toru; Kanno,Yohei, Manufacturing method of thin film integrated circuit device and manufacturing method of non-contact type thin film integrated circuit device.
Yamazaki, Shunpei; Murakami, Masakazu; Takayama, Toru; Maruyama, Junya, Method for fabricating a semiconductor device by transferring a layer to a support with curvature.
Yamazaki,Shunpei; Murakami,Masakazu; Takayama,Toru; Maruyama,Junya, Method for fabricating a semiconductor device by transferring a layer to a support with curvature.
Yamazaki Shunpei,JPX ; Arai Yasuyuki,JPX ; Teramoto Satoshi,JPX, Method of manufacturing a semiconductor device using a metal which promotes crystallization of silicon and substrate bo.
Sonoda, Yuichi; Arao, Kozo; Toyama, Noboru; Miyamoto, Yusuke, Process and apparatus for forming zinc oxide film, and process and apparatus for producing photovoltaic device.
Tatsuya Shimoda JP; Satoshi Inoue JP; Wakao Miyazawa JP, Separating method, method for transferring thin film device, thin film device, thin film integrated circuit device, and liquid crystal display device manufactured by using the transferring method.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.