Method for manufacturing semiconductor device
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-029/786
G02F-001/167
H01L-027/12
H01L-031/0392
H01L-051/00
H01L-027/32
H01L-051/56
출원번호
US-0431073
(2012-03-27)
등록번호
US-9419142
(2016-08-16)
우선권정보
JP-2006-058729 (2006-03-03)
발명자
/ 주소
Morisue, Masafumi
Jinbo, Yasuhiro
Fujii, Gen
Kimura, Hajime
출원인 / 주소
Semiconductor Energy Laboratory Co., Ltd.
대리인 / 주소
Robinson Intellectual Property Law Office
인용정보
피인용 횟수 :
1인용 특허 :
45
초록▼
A method for manufacturing a semiconductor device includes: forming a photocatalytic layer and an organic compound layer in contact with the photocatalytic layer over a substrate having a light transmitting property; forming an element forming layer over the substrate having the light transmitting p
A method for manufacturing a semiconductor device includes: forming a photocatalytic layer and an organic compound layer in contact with the photocatalytic layer over a substrate having a light transmitting property; forming an element forming layer over the substrate having the light transmitting property with the photocatalytic layer and the organic compound layer in contact with the photocatalytic layer interposed therebetween; and separating the element forming layer from the substrate having the light transmitting property after the photocatalytic layer is irradiated with light through the substrate having the light transmitting property.
대표청구항▼
1. A semiconductor device comprising: a first flexible substrate;an organic compound layer in which inorganic compound particles are dispersed over and in contact with the first flexible substrate;an insulating layer over and in direct contact with the organic compound layer;an electrophoresis eleme
1. A semiconductor device comprising: a first flexible substrate;an organic compound layer in which inorganic compound particles are dispersed over and in contact with the first flexible substrate;an insulating layer over and in direct contact with the organic compound layer;an electrophoresis element over and in direct contact with the insulating layer; anda second flexible substrate over and in direct contact with the electrophoresis element,wherein the inorganic compound particles comprise one of silicon oxide, silicon nitride, aluminum oxide, tantalum oxide, and barium fluoride magnesium,wherein the insulating layer is a single layer selected from silicon nitride, silicon oxide, and aluminum nitride, andwherein the electrophoresis element includes a first conductive layer, a second conductive layer in direct contact with the second flexible substrate, and a microcapsule. 2. The semiconductor device according to claim 1, wherein the first conductive layer is electrically connected to the microcapsule, andwherein the microcapsule is electrically connected to the second conductive layer. 3. The semiconductor device according to claim 1, wherein the microcapsule is fixed between the first conductive layer and the second conductive layer with a binder. 4. The semiconductor device according to claim 1, wherein the microcapsule includes a black particle and a white particle. 5. A semiconductor device comprising: a first flexible substrate;an organic compound layer in which particles having light shielding properties are dispersed over and in contact with the first flexible substrate;an insulating layer over and in direct contact with the organic compound layer;an electrophoresis element over and in direct contact with the insulating layer; anda second flexible substrate over and in direct contact with the electrophoresis element,wherein the particles having light shielding properties absorb light in the wavelength range from 280 to 780 nm,wherein the insulating layer is a single layer selected from silicon nitride, silicon oxide, and aluminum nitride, andwherein the electrophoresis element includes a first conductive layer, a second conductive layer in direct contact with the second flexible substrate, and a microcapsule. 6. The semiconductor device according to claim 5, wherein the first conductive layer is electrically connected to the microcapsule, andwherein the microcapsule is electrically connected to the second conductive layer. 7. The semiconductor device according to claim 5, wherein the microcapsule is fixed between the first conductive layer and the second conductive layer with a binder. 8. The semiconductor device according to claim 5, wherein the microcapsule includes a black particle and a white particle. 9. A semiconductor device comprising: a first flexible substrate;an organic compound layer in which inorganic compound particles are dispersed over and in contact with the first flexible substrate;an insulating layer over and in direct contact with the organic compound layer;a switching element over and in direct contact with the insulating layer;an electrophoresis element over the switching element; anda second flexible substrate over and in direct contact with the electrophoresis element,wherein the inorganic compound particles comprise one of silicon oxide, silicon nitride, aluminum oxide, tantalum oxide, and barium fluoride magnesium,wherein the insulating layer is a single layer selected from silicon nitride, silicon oxide, and aluminum nitride,wherein the electrophoresis element includes a first conductive layer, a second conductive layer in direct contact with the second flexible substrate, and a microcapsule, andwherein the first conductive layer is electrically connected to the switching element. 10. The semiconductor device according to claim 9, wherein the first conductive layer is electrically connected to the microcapsule, andwherein the microcapsule is electrically connected to the second conductive layer. 11. The semiconductor device according to claim 9, wherein the microcapsule is fixed between the first conductive layer and the second conductive layer with a binder. 12. The semiconductor device according to claim 9, wherein the microcapsule includes a black particle and a white particle. 13. A semiconductor device comprising: a first flexible substrate;an organic compound layer in which particles having light shielding properties are dispersed over and in contact with the first flexible substrate;an insulating layer over and in direct contact with the organic compound layer;a switching element over and in direct contact with the insulating layer;an electrophoresis element over the switching element; anda second flexible substrate over and in direct contact with the electrophoresis element,wherein the particles having light shielding properties absorb light in the wavelength range from 280 to 780 nm,wherein the insulating layer is a single layer selected from silicon nitride, silicon oxide, and aluminum nitride,wherein the electrophoresis element includes a first conductive layer, a second conductive layer in direct contact with the second flexible substrate, and a microcapsule, andwherein the first conductive layer is electrically connected to the switching element. 14. The semiconductor device according to claim 13, wherein the first conductive layer is electrically connected to the microcapsule, andwherein the microcapsule is electrically connected to the second conductive layer. 15. The semiconductor device according to claim 13, wherein the microcapsule is fixed between the first conductive layer and the second conductive layer with a binder. 16. The semiconductor device according to claim 13, wherein the microcapsule includes a black particle and a white particle.
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