Semiconductor device and manufacturing method thereof
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
G02F-001/1368
H01L-025/18
H01L-029/786
G02F-001/1335
G02F-001/1343
H01L-033/00
G02F-001/1333
G02F-001/1337
G02F-001/1339
G02F-001/1362
H01L-027/12
출원번호
US-0721482
(2015-05-26)
등록번호
US-9429807
(2016-08-30)
우선권정보
JP-2000-135602 (2000-05-09)
발명자
/ 주소
Yamazaki, Shunpei
출원인 / 주소
Semiconductor Energy Laboratory Co., Ltd.
대리인 / 주소
Robinson Intellectual Property Law Office
인용정보
피인용 횟수 :
0인용 특허 :
248
초록▼
A means of forming unevenness for preventing specular reflection of a pixel electrode, without increasing the number of process steps, is provided. In a method of manufacturing a reflecting type liquid crystal display device, the formation of unevenness (having a radius of curvature r in a convex po
A means of forming unevenness for preventing specular reflection of a pixel electrode, without increasing the number of process steps, is provided. In a method of manufacturing a reflecting type liquid crystal display device, the formation of unevenness (having a radius of curvature r in a convex portion) in the surface of a pixel electrode is performed by the same photomask as that used for forming a channel etch type TFT, in which the convex portion is formed in order to provide unevenness to the surface of the pixel electrode and give light scattering characteristics.
대표청구항▼
1. A semiconductor device comprising: a first conductive film on a substrate;an IC chip whose first electrode is connected to the first conductive film through a conductive particle;a second conductive film connected to a second electrode of the IC chip through a conductive particle; andan FPC conne
1. A semiconductor device comprising: a first conductive film on a substrate;an IC chip whose first electrode is connected to the first conductive film through a conductive particle;a second conductive film connected to a second electrode of the IC chip through a conductive particle; andan FPC connected to the second conductive film through a conductive particle,wherein the first conductive film comprises a region overlapping with a sealing material. 2. The semiconductor device according to claim 1, further comprising: a pixel portion located in a region surrounded by the sealing material,wherein the first conductive film extends in the region surrounded by the sealing material. 3. The semiconductor device according to claim 1, further comprising: a pixel portion located in a region surrounded by the sealing material,wherein the pixel portion comprises a transistor electrically connected to a pixel electrode, andwherein a coloring layer overlaps with a channel formation region of the transistor. 4. The semiconductor device according to claim 1, further comprising: a pixel portion located in a region surrounded by the sealing material,wherein the pixel portion comprises a transistor electrically connected to a pixel electrode, andwherein a coloring layer overlaps with a channel formation region of the transistor and the pixel electrode. 5. The semiconductor device according to claim 1, further comprising: a pixel portion located in a region surrounded by the sealing material,wherein the pixel portion comprises a transistor electrically connected to a pixel electrode,wherein a first coloring layer overlaps with a channel formation region of the transistor and the pixel electrode, andwherein a second coloring layer overlaps with the channel formation region of the transistor. 6. The semiconductor device according to claim 1, further comprising: a transistor located in a region surrounded by the sealing material,wherein the transistor comprises: a gate electrode;a semiconductor film over the gate electrode, the semiconductor film comprising a first portion, a second portion, and a recessed portion interposed between the first portion and the second portion, wherein a thickness of the first portion is larger than a thickness of the recessed portion and a thickness of the second portion is larger than the thickness of the recessed portion; andan insulating film over the semiconductor film, wherein the insulating film is in contact with a top surface of the first portion, a top surface of the second portion and a top surface of the recessed portion. 7. A semiconductor device comprising: a first conductive film on a substrate;an IC chip whose first electrode is connected to the first conductive film through a conductive particle;a second conductive film connected to a second electrode of the IC chip through a conductive particle; andan FPC connected to the second conductive film through a conductive particle,wherein the first conductive film comprises a region overlapping with a sealing material, andwherein the first conductive film and the second conductive film is a same layer. 8. The semiconductor device according to claim 7, further comprising: a pixel portion located in a region surrounded by the sealing material,wherein the first conductive film extends in the region surrounded by the sealing material. 9. The semiconductor device according to claim 7, further comprising: a pixel portion located in a region surrounded by the sealing material,wherein the pixel portion comprises a transistor electrically connected to a pixel electrode, andwherein a coloring layer overlaps with a channel formation region of the transistor. 10. The semiconductor device according to claim 7, further comprising: a pixel portion located in a region surrounded by the sealing material,wherein the pixel portion comprises a transistor electrically connected to a pixel electrode, andwherein a coloring layer overlaps with a channel formation region of the transistor and the pixel electrode. 11. The semiconductor device according to claim 7, further comprising: a pixel portion located in a region surrounded by the sealing material,wherein the pixel portion comprises a transistor electrically connected to a pixel electrode,wherein a first coloring layer overlaps with a channel formation region of the transistor and the pixel electrode, andwherein a second coloring layer overlaps with the channel formation region of the transistor. 12. The semiconductor device according to claim 7, further comprising: a transistor located in a region surrounded by the sealing material,wherein the transistor comprises: a gate electrode;a semiconductor film over the gate electrode, the semiconductor film comprising a first portion, a second portion, and a recessed portion interposed between the first portion and the second portion, wherein a thickness of the first portion is larger than a thickness of the recessed portion and a thickness of the second portion is larger than the thickness of the recessed portion; andan insulating film over the semiconductor film, wherein the insulating film is in contact with a top surface of the first portion, a top surface of the second portion and a top surface of the recessed portion.
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