Light-emitting device including color filter and black matrix
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-029/08
H01L-033/02
G09G-003/32
H01L-027/32
H01L-027/12
H01L-029/66
출원번호
US-0969911
(2013-08-19)
등록번호
US-9431574
(2016-08-30)
우선권정보
JP-2007-132803 (2007-05-18)
발명자
/ 주소
Yamazaki, Shunpei
출원인 / 주소
Semiconductor Energy Laboratory Co., Ltd.
대리인 / 주소
Robinson Intellectual Property Law Office
인용정보
피인용 횟수 :
0인용 특허 :
74
초록▼
A light-emitting device includes a pixel having a transistor provided over a substrate, and a light-emitting element. The transistor includes a single-crystal semiconductor layer which forms a channel formation region, a silicon oxide layer is provided between the substrate and the single-crystal se
A light-emitting device includes a pixel having a transistor provided over a substrate, and a light-emitting element. The transistor includes a single-crystal semiconductor layer which forms a channel formation region, a silicon oxide layer is provided between the substrate and the single-crystal semiconductor layer, a source or a drain of the transistor is electrically connected to an electrode of the light-emitting element, and the transistor is operated in a saturation region when the light-emitting element emits light. Further, in the light-emitting device, a gray scale of the light-emitting element is displayed by changing a potential applied to the gate of the transistor.
대표청구항▼
1. A light-emitting device comprising: a first transistor;a second transistor;a first light-emitting element electrically connected to the first transistor, the first light-emitting element comprising: a first electrode;a first part of a layer over the first electrode, the layer comprising an organi
1. A light-emitting device comprising: a first transistor;a second transistor;a first light-emitting element electrically connected to the first transistor, the first light-emitting element comprising: a first electrode;a first part of a layer over the first electrode, the layer comprising an organic compound; anda first part of a second electrode over the first part of the layer;a second light-emitting element electrically connected to the second transistor, the second light-emitting element comprising: a third electrode;a second part of the layer over the third electrode; anda second part of the second electrode over the second part of the layer;an insulator over the first transistor and the second transistor and below the layer, the insulator covering an end portion of the first electrode and an end portion of the third electrode;a first substrate over the first light-emitting element and the second light-emitting element;a first color filter on the first substrate, the first color filter overlapping the first light-emitting element;a second color filter on the first substrate, the second color filter overlapping the second light-emitting element; anda black matrix on the first substrate, the black matrix being between the first color filter and the second color filter,wherein the layer is a continuous layer at least extending from the first part to the second part,wherein the layer is in contact with a top surface of the insulator,wherein the insulator and the black matrix overlap each other,wherein a width of the insulator is larger than a width of the black matrix,wherein at least part of the black matrix is sandwiched by the first color filter and the first substrate,wherein a pixel comprises the first transistor, the first light-emitting element and a third transistor,wherein one of a source and a drain of the first transistor is directly connected to the first light-emitting element,wherein one of a source and a drain of the third transistor is directly connected to a gate of the first transistor,wherein the other of the source and the drain of the third transistor is directly connected to a signal line,wherein a channel formation region of the first transistor is made of single-crystal silicon, andwherein the first transistor is configured to operate in a saturation when the first light-emitting element emits white light. 2. The light-emitting device according to claim 1, wherein the first transistor and the second transistor are formed over a second substrate. 3. The light-emitting device according to claim 2, wherein the second substrate is a glass substrate. 4. The light-emitting device according to claim 1, wherein the white light emitted from the first light-emitting element passes the first substrate. 5. The light-emitting device according to claim 1, further comprising: a silicon oxide layer over a second substrate;a nitrogen-containing layer over the silicon oxide layer; andan oxide film over the nitrogen-containing layer, the oxide film comprising a halogen element,wherein the silicon oxide layer, the nitrogen-containing layer and the oxide film are between the first transistor and the second substrate. 6. A light-emitting device comprising: a first transistor;a second transistor;a first electrode of a first light-emitting element electrically connected to the first transistor;a first electrode of a second light-emitting element electrically connected to the second transistor;a layer over the first electrode of the first light-emitting element and the first electrode of the second light-emitting element, the layer comprising an organic compound;a second electrode over the layer;an insulator over the first transistor and the second transistor and below the layer, the insulator covering an end portion of the first electrode of the first light-emitting element;a first substrate over the first light-emitting element and the second light-emitting element;a first color filter on the first substrate, the first color filter overlapping the first light-emitting element;a second color filter on the first substrate, the second color filter overlapping the second light-emitting element; anda black matrix on the first substrate, the black matrix being between the first color filter and the second color filter,wherein a first part of the layer is in contact with the first electrode of the first light-emitting element,wherein a second part of the layer is in contact with the first electrode of the second light-emitting element,wherein the layer is a continuous layer at least extending from the first part to the second part,wherein the layer is in contact with a top surface of the insulator,wherein the insulator and the black matrix overlap each other,wherein a width of the insulator is larger than a width of the black matrix,wherein at least part of the black matrix is sandwiched by the first color filter and the first substrate,wherein the first transistor is configured to operate in a saturation when the first light-emitting element emits white light,wherein a pixel comprises the first transistor, the first light-emitting element and a third transistor,wherein one of a source and a drain of the first transistor is directly connected to the first light-emitting element,wherein one of a source and a drain of the third transistor is directly connected to a gate of the first transistor,wherein the other of the source and the drain of the third transistor is directly connected to a signal line,wherein a channel formation region of the first transistor is made of single-crystal silicon, andwherein the second transistor is configured to operate in a saturation when the second light-emitting element emits white light. 7. The light-emitting device according to claim 6, wherein the first transistor and the second transistor are formed over a second substrate. 8. The light-emitting device according to claim 7, wherein the second substrate is a glass substrate. 9. The light-emitting device according to claim 6, wherein the white light emitted from the first light-emitting element passes the first substrate. 10. The light-emitting device according to claim 6, further comprising: a silicon oxide layer over a second substrate;a nitrogen-containing layer over the silicon oxide layer; andan oxide film over the nitrogen-containing layer, the oxide film comprising a halogen element,wherein the silicon oxide layer, the nitrogen-containing layer and the oxide film are between the first transistor and the second substrate. 11. A light-emitting device comprising: a first transistor;a second transistor;a first light-emitting element electrically connected to the first transistor, the first light-emitting element comprising: a first electrode;a first part of a layer over the first electrode, the layer comprising an organic compound; anda first part of a second electrode over the first part of the layer;a second light-emitting element electrically connected to the second transistor, the second light-emitting element comprising: a third electrode;a second part of the layer over the third electrode; anda second part of the second electrode over the second part of the layer;an insulator over the first transistor and the second transistor and below the layer, the insulator covering an end portion of the first electrode and an end portion of the third electrode;a first substrate over the first light-emitting element and the second light-emitting element;a first color filter on the first substrate, the first color filter overlapping the first light-emitting element;a second color filter on the first substrate, the second color filter overlapping the second light-emitting element; anda black matrix on the first substrate, the black matrix being between the first color filter and the second color filter,wherein the layer is a continuous layer at least extending from the first part to the second part,wherein the layer is in contact with a top surface of the insulator,wherein the insulator and the black matrix overlap each other,wherein a width of the insulator is larger than a width of the black matrix,wherein at least part of the black matrix is sandwiched by the first color filter and the first substrate,wherein a pixel comprises the first transistor, the first light-emitting element and a third transistor,wherein one of a source and a drain of the first transistor is directly connected to the first light-emitting element,wherein one of a source and a drain of the third transistor is directly connected to a gate of the first transistor,wherein the other of the source and the drain of the third transistor is directly connected to a signal line,wherein the first transistor comprises a semiconductor layer comprising indium, andwherein the first transistor is configured to operate in a saturation when the first light-emitting element emits white light. 12. The light-emitting device according to claim 11, wherein the first transistor and the second transistor are formed over a second substrate. 13. The light-emitting device according to claim 12, wherein the second substrate is a glass substrate. 14. The light-emitting device according to claim 11, wherein the white light emitted from the first light-emitting element passes the first substrate. 15. The light-emitting device according to claim 11, further comprising: a silicon oxide layer over a second substrate;a nitrogen-containing layer over the silicon oxide layer; andan oxide film over the nitrogen-containing layer, the oxide film comprising a halogen element,wherein the silicon oxide layer, the nitrogen-containing layer and the oxide film are between the first transistor and the second substrate.
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