Semiconductor device and method for producing the same
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-029/66
H01L-027/02
H01L-029/94
H01L-049/02
H01L-027/06
H01L-029/866
H01L-029/78
H01L-029/739
H01L-029/06
출원번호
US-0485554
(2014-09-12)
등록번호
US-9461030
(2016-10-04)
우선권정보
JP-2012-177381 (2012-08-09)
발명자
/ 주소
Nishimura, Takeyoshi
출원인 / 주소
FUJI ELECTRIC CO., LTD.
대리인 / 주소
Rabin & Berdo, P.C.
인용정보
피인용 횟수 :
1인용 특허 :
6
초록▼
A capacitive component region is formed below a temperature detecting diode or below a protective diode. In addition, the capacitive component region is formed below an anode metal wiring line connecting the temperature detecting diode and an anode electrode pad and below a cathode metal wiring line
A capacitive component region is formed below a temperature detecting diode or below a protective diode. In addition, the capacitive component region is formed below an anode metal wiring line connecting the temperature detecting diode and an anode electrode pad and below a cathode metal wiring line connecting the temperature detecting diode and a cathode electrode pad. The capacitive component region is an insulating film interposed between polysilicon layers. Specifically, a first insulating film, a polysilicon conductive layer, and a second insulating film are sequentially formed on a first main surface of a semiconductor substrate, and the temperature detecting diode, the protective diode, the anode metal wiring line, or the cathode metal wiring line is formed on the upper surface of the second insulating film. Therefore, it is possible to improve the static electricity resistance of the temperature detecting diode or the protective diode.
대표청구항▼
1. A semiconductor device comprising: a semiconductor element that makes a current flow in a thickness direction of a semiconductor substrate;a plurality of first insulating films formed on a first main surface of the semiconductor substrate;a plurality of conductive layers each formed on a respecti
1. A semiconductor device comprising: a semiconductor element that makes a current flow in a thickness direction of a semiconductor substrate;a plurality of first insulating films formed on a first main surface of the semiconductor substrate;a plurality of conductive layers each formed on a respective one of the plurality of first insulating films; each of the plurality of conductive layers being provided with a diode;a plurality of second insulating films each formed on a respective one of the plurality of conductive layers;a first-conductivity-type layer and a second-conductivity-type layer formed on each of the plurality of second insulating films and forming the diode;a plurality of first capacitors each having a respective one of the plurality of second insulating films between the first-conductivity-type layer and a respective one of the plurality of conductive layers as a first capacitive component region; anda plurality of second capacitors each having a respective one of the plurality of second insulating films between the second-conductivity-type layer and a respective one of the plurality of conductive layers as a second capacitive component region,wherein each diode is connected in parallel, and the plurality of conductive layers are electrically insulated from each other. 2. The semiconductor device according to claim 1, wherein the semiconductor element includes: a first semiconductor layer of a first conductivity type that is formed in a surface layer of the first main surface of the semiconductor substrate;a first semiconductor region of a second conductivity type that is selectively formed in a surface layer of the first semiconductor layer which is close to the first main surface;a second semiconductor region of the first conductivity type that is selectively formed in a surface layer of the first semiconductor region which is close to the first main surface; anda gate electrode that is formed on a surface of the first semiconductor region, with a gate insulating film interposed therebetween, in a portion which is interposed between the first semiconductor layer and the second semiconductor region. 3. The semiconductor device according to claim 1, further comprising: a plurality of third capacitors each having a respective one of the plurality of first insulating films between a respective one of the plurality of conductive layers and the semiconductor substrate as a third capacitive component region. 4. The semiconductor device according to claim 1, wherein each of the plurality of conductive layers is divided into a first conductive layer portion that faces the first-conductivity-type layer, and a second conductive layer portion that faces the second-conductivity-type layer,a space between the first conductive layer portion and the second conductive layer portion is filled with the second insulating film, andthe semiconductor device further includes a fourth capacitor that has a respective one of the second insulating films provided between the first conductive layer portion and the second conductive layer portion as a fourth capacitive component region. 5. The semiconductor device according to claim 4, further comprising: a fifth capacitor that has a respective one of the plurality of first insulating films between the first conductive layer portion and the semiconductor substrate as a fifth capacitive component region; anda sixth capacitor that has a respective one of the plurality of first insulating films between the second conductive layer portion and the semiconductor substrate as a sixth capacitive component region. 6. The semiconductor device according to claim 2, wherein the diode is a temperature detecting diode that is provided in an active region of the semiconductor element and detects a temperature of the semiconductor element. 7. The semiconductor device according to claim 2, further comprising: a gate electrode pad that is connected to the gate electrode; anda source electrode that is connected to the first semiconductor region and the second semiconductor region,wherein the diode is a protective diode that is formed between the gate electrode pad and the source electrode. 8. The semiconductor device according to claim 2, further comprising: a gate electrode pad that is connected to the gate electrode;a third semiconductor region of the first conductivity type that is selectively formed in the surface layer of the first semiconductor layer which is close to the first main surface; anda drain electrode that is connected to the third semiconductor region,wherein the diode is a protective diode that is formed between the gate electrode pad and the drain electrode. 9. A method for producing the semiconductor device according to claim 2, comprising: a step of forming the gate insulating film and the first insulating film on the first semiconductor region;a step of forming the gate electrode which is made of polysilicon on the gate insulating film and forming the conductive layer which is made of polysilicon on the first insulating film;a step of patterning the gate electrode and the conductive layer;a step of forming the second insulating film on the patterned conductive layer;a step of forming a second semiconductor layer which is made of polysilicon on the second insulating film; anda step of implanting first-conductivity-type impurity ions to selectively form the first-conductivity-type layer of the diode in the second semiconductor layer and forming the second semiconductor region, which will be a source region of the semiconductor element, in the surface layer of the first semiconductor region close to the first main surface. 10. The semiconductor device according to claim 7, wherein the protective diode is made of polysilicon. 11. The semiconductor device according to claim 1, wherein the conductive layer is made of polysilicon. 12. The semiconductor device according to claim 7, wherein the protective diode is a zener diode. 13. The semiconductor device according to claim 1, wherein the semiconductor element is a trench-type insulated gate semiconductor element. 14. A semiconductor device comprising: a semiconductor element that makes a current flow in a thickness direction of a semiconductor substrate;a temperature detecting diode that detects a temperature of the semiconductor element and is provided in an active region of the semiconductor element;an anode metal wiring line that is provided on a first main surface side of the semiconductor substrate and is connected to an anode of the temperature detecting diode;a cathode metal wiring line that is provided on the first main surface side of the semiconductor substrate and is connected to a cathode of the temperature detecting diode;a first insulating film that is formed on a first main surface of the semiconductor substrate between the anode and cathode metal wiring lines and the semiconductor substrate;a conductive layer that is formed on the first insulating film;a second insulating film that is formed on the conductive layer;a first semiconductor layer that is formed between the second insulating film and the anode metal wiring line and is connected to the anode metal wiring line;a second semiconductor layer that is formed between the second insulating film and the cathode metal wiring line and is connected to the cathode metal wiring line;a first capacitor that has the second insulating film between the first semiconductor layer and the conductive layer as a first capacitive component region; anda second capacitor that has the second insulating film between the second semiconductor layer and the conductive layer as a second capacitive component region,wherein the semiconductor element includes a gate electrode, and the conductive layer is electrically insulated from the gate electrode. 15. The semiconductor device according to claim 14, wherein the semiconductor element includes:a first semiconductor layer of a first conductivity type that is formed in a surface layer of the first main surface of the semiconductor substrate;a first semiconductor region of a second conductivity type that is selectively formed in a surface layer of the first semiconductor layer which is close to the first main surface; anda second semiconductor region of the first conductivity type that is selectively formed in a surface layer of the first semiconductor region which is close to the first main surface;wherein the gate electrode is formed on a surface of the first semiconductor region, with a gate insulating film interposed therebetween, in a portion which is interposed between the first semiconductor layer and the second semiconductor region. 16. The semiconductor device according to claim 14, further comprising: a third capacitor that has the first insulating film between the conductive layer and the semiconductor substrate as a third capacitive component region. 17. The semiconductor device according to claim 14, wherein the conductive layer is divided into a first conductive layer portion that faces the first semiconductor layer, with the second insulating film interposed therebetween, and a second conductive layer portion that faces the second semiconductor layer, with the second insulating film interposed therebetween,a space between the first conductive layer portion and the second conductive layer portion is filled with the second insulating film, andthe semiconductor device further includes a fourth capacitor that has the second insulating film provided between the first conductive layer portion and the second conductive layer portion as a fourth capacitive component region. 18. The semiconductor device according to claim 17, further comprising: a fifth capacitor that has the first insulating film between the first conductive layer portion and the semiconductor substrate as a fifth capacitive component region; anda sixth capacitor that has the first insulating film between the second conductive layer portion and the semiconductor substrate as a sixth capacitive component region. 19. A method for producing the semiconductor device according to claim 15, comprising: a step of forming the gate insulating film and the first insulating film on the first semiconductor region;a step of forming the gate electrode which is made of polysilicon on the gate insulating film and forming the conductive layer which is made of polysilicon on the first insulating film;a step of patterning the gate electrode and the conductive layer;a step of forming the second insulating film on the patterned conductive layer; anda step of forming the first semiconductor layer which is made of polysilicon on the second insulating film so as to be close to the anode metal wiring line and forming the second semiconductor layer which is made of polysilicon on the second insulating film so as to be close to the cathode metal wiring line. 20. The semiconductor device according to claim 14, wherein the temperature detecting diode is made of polysilicon. 21. The semiconductor device according to claim 14, wherein the temperature detecting diode is a zener diode.
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