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In some embodiments, a substrate carrier for holding a plurality of substrates comprises a disk formed of a continuous material to a nominal dimension which is approximately a multiple of a nominal dimension of a standard substrate size used in the manufacture of light emitting diode devices. In an

In some embodiments, a substrate carrier for holding a plurality of substrates comprises a disk formed of a continuous material to a nominal dimension which is approximately a multiple of a nominal dimension of a standard substrate size used in the manufacture of light emitting diode devices. In an embodiment, the disk is formed symmetrically about a central axis and defines a substantially planar upper surface. A first pair of pockets is defined in the upper surface of the disk, wherein the disk and each of the first pair of pockets are bisected by a first reference plane passing through the central axis. A second pair of pockets is defined in the upper surface of the disk, wherein the disk and each of the second pair of pockets are bisected by a second reference plane passing through the central axis.

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1. A substrate carrier comprising: a disk formed of a continuous material, the disk being formed symmetrically about a central axis and defining a substantially planar upper surface;a first pair of pockets defined in the upper surface of the disk and each having a first diameter, wherein the disk an

1. A substrate carrier comprising: a disk formed of a continuous material, the disk being formed symmetrically about a central axis and defining a substantially planar upper surface;a first pair of pockets defined in the upper surface of the disk and each having a first diameter, wherein the disk and each of the first pair of pockets are bisected by a first reference plane passing through the central axis; anda second pair of pockets defined in the upper surface of the disk and each having a second diameter less than the first diameter,wherein the disk and each of the second pair of pockets are bisected by a second reference plane passing through the central axis, andwherein the pockets of the first pair are interconnected by a transition zone adapted to provide clearance to accommodate thermal expansion of each substrate respectively placed in a corresponding pocket of the first pair and subjected to at least one of a deposition, etching, treatment, cleaning or testing process in a process chamber. 2. The substrate carrier of claim 1, wherein the second reference plane is orthogonal to the first reference plane. 3. The substrate carrier of claim 2, wherein the pockets of the second pair are isolated from one another and from the pockets of the first pair. 4. The substrate carrier of claim 1, wherein the disk has a diameter of approximately a multiple of six inches, four inches, three inches or two inches. 5. The substrate carrier of claim 1, wherein the disk comprises monocrystalline silicon. 6. The substrate carrier of claim 5, wherein the disk has a resistivity of greater than 1.0 ohm-cm. 7. The substrate carrier of claim 1, wherein the disk further defines a substantially planar lower surface, wherein a thickness of the disk measured between the upper and lower surfaces is from 1.60 mm to 1.70 mm. 8. The substrate carrier of claim 7, wherein a thickness of the disk measured between a lower surface of each of the pockets and the planar lower surface is from about 0.82 to about 0.87 mm. 9. The substrate carrier of claim 1, wherein the disk has a nominal diameter of about 301 mm and wherein each of the first pair of pockets has a circular profile and a nominal diameter of about 150.8 mm. 10. The substrate carrier of claim 9, wherein each of the second pair of pockets has a circular profile and a nominal diameter of about 50.20 to about 50.30 mm. 11. A substrate carrier for holding a substrate, the substrate carrier comprising: a disk having an upper surface and a lower surface separated by a thickness; anda pair of pockets formed through the upper surface of the disk and extending through a portion of the thickness of the disk to define respective regions of a reduced thickness,wherein each pocket of the pair of pockets are bisected by a reference plane passing through a central axis of the disk;wherein each of the pockets has a nominal dimension of approximately a multiple of a nominal dimension of the disk; andwherein the pockets of the pair of pockets are interconnected by a transition zone having the reduced thickness, the reduced thickness of the transition zone being adapted to provide clearance to accommodate thermal expansion of each substrate respectively placed in a corresponding pocket and subjected to at least one of a deposition, etching, treatment, cleaning or testing process in a process chamber. 12. The substrate carrier of claim 11, wherein the disk comprises monocrystalline silicon. 13. The substrate carrier of claim 12, wherein the disk has a resistivity of greater than 1.0 ohm-cm. 14. The substrate carrier of claim 11, wherein the pair of pockets is a first pair of pockets bisected by a first reference plane passing through a central axis of the disk, and wherein a second pair of pockets is formed through a top surface of said disk, wherein the disk and each pocket of the second pair of pockets are bisected by a second reference plane passing through a central axis of the disk. 15. The substrate carrier of claim 11, wherein the transition zone passes through the central axis.