Method for the local polishing of a semiconductor wafer
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
B24B-001/00
B24B-037/04
B24B-037/30
H01L-021/02
출원번호
US-0774163
(2010-05-05)
등록번호
US-9533394
(2017-01-03)
우선권정보
DE-10 2009 030 298 (2009-06-24)
발명자
/ 주소
Schwandner, Juergen
출원인 / 주소
Siltronic AG
대리인 / 주소
Brooks Kushman P.C.
인용정보
피인용 횟수 :
0인용 특허 :
23
초록▼
The edge region of one side of a semiconductor wafer is polished by pressing the wafer by means of a rotatable polishing head against a polishing pad lying on a rotating polishing plate, and containing fixed abrasive. The polishing head is provided with a resilient membrane radially subdivided into
The edge region of one side of a semiconductor wafer is polished by pressing the wafer by means of a rotatable polishing head against a polishing pad lying on a rotating polishing plate, and containing fixed abrasive. The polishing head is provided with a resilient membrane radially subdivided into a plurality of chambers by gas or liquid cushions, the polishing pressure independently selectable for each chamber. The wafer is held in position during polishing by a retainer ring pressed against the polishing pad with an application pressure, a polishing agent is introduced between the wafer and the polishing pad, and the polishing pressure exerted on the wafer in a chamber lying in the edge region of the wafer of the polishing head, and the application pressure of the retainer ring, are selected so that material is essentially removed only at the edge of the wafer.
대표청구항▼
1. A method for locally polishing one side of a semiconductor wafer, comprising pressing the semiconductor wafer by means of a rotatable polishing head against a polishing pad lying on a rotating polishing plate and containing firmly bound abrasive, wherein the polishing head is provided with a resi
1. A method for locally polishing one side of a semiconductor wafer, comprising pressing the semiconductor wafer by means of a rotatable polishing head against a polishing pad lying on a rotating polishing plate and containing firmly bound abrasive, wherein the polishing head is provided with a resilient membrane concentrically subdivided into a plurality of chambers individually pressurizable by means of gas or liquid cushions, and the exerted polishing pressure is independently selectable for each chamber, wherein the semiconductor wafer is held in position during polishing by a retainer ring which is also pressed against the polishing pad with an application pressure, introducing a polishing agent between the semiconductor wafer and the polishing pad, and selecting the polishing pressure exerted on the semiconductor wafer in a chamber lying in the edge region of the semiconductor wafer of the polishing head, and selecting the application pressure of the retainer ring, such that material is essentially removed only at the edge of the semiconductor wafer. 2. The method of claim 1, wherein the polishing agent comprises an aqueous solution of the compounds sodium carbonate (Na2CO3), potassium carbonate (K2CO3), sodium hydroxide (NaOH), potassium hydroxide (KOH), ammonium hydroxide (NH4OH), tetramethylammonium hydroxide (TMAH) or any mixtures thereof. 3. The method of claim 2, wherein the pH of the polishing agent solution is from 11.0 to 12.5 and the proportion of the compounds in the polishing agent solution is from 0.01 to 10 wt. %. 4. The method of claim 1, wherein the polishing pad contains abrasive substances comprising particles of oxides of the elements cerium, aluminum, silicon or zirconium, or particles of hard substances silicon carbide, boron nitride or diamond. 5. The method of claim 1, wherein the polishing pad contains abrasive with a particle size of 0.1-1.0 μm. 6. The method of claim 5, wherein the polishing pad contains abrasive with a particle size of 0.1-0.6 μm. 7. The method of claim 5, wherein the polishing pad contains abrasive with a particle size of 0.1-0.25 μm. 8. The method of claim 1, wherein the retainer ring application pressure is 0.5-10 psi. 9. The method of claim 1, wherein pressure in an outer chamber is higher than the pressure in an inner chamber. 10. The method of claim 1, wherein the semiconductor wafer is a monocrystalline silicon wafer or a wafer comprising an SiGe layer, with a diameter of 300 mm or more. 11. The method of claim 1, wherein the polishing pad has replicated microstructures on the surface of the polishing pad. 12. The method of claim 11, wherein the replicated microstructures comprise columns with a cylindrical or polygonal cross section. 13. The method of claim 11, wherein the replicated microstructures have the shape of pyramids or pyramid frustrums. 14. The method of claim 1, wherein the semiconductor wafer is a donor wafer from which a transfer layer has been removed. 15. The method of claim 1, wherein the semiconductor wafer is an SiGe wafer. 16. The method of claim 1, wherein the semiconductor wafer has a raised step around the circumference of the wafer.
연구과제 타임라인
LOADING...
LOADING...
LOADING...
LOADING...
LOADING...
이 특허에 인용된 특허 (23)
Wang, Yuchun; Frey, Bernard M.; Basol, Bulent M.; Talieh, Homayoun; Young, Douglas W.; McGrath, Brett E.; Desai, Mukesh; Velazquez, Efrain; Truong, Tuan, Advanced chemical mechanical polishing system with smart endpoint detection.
Lin Juen-Kuen,TWX ; Lai Chien-Hsin,TWX ; Peng Peng-Yih,TWX ; Wu Kun-Lin,TWX ; Chiu Daniel,TWX ; Yang Chih-Chiang,TWX ; Wu Juan-Yuan,TWX ; Chiu Hao-Kuang,TWX, Chemical-mechanical polish machines and fabrication process using the same.
James David B. ; Budinger William D. ; Roberts John V. H. ; Oliver Michael R. ; Chechik Nina G. ; Levering ; Jr. Richard M. ; Reinhardt Heinz F., Fixed abrasive polishing system for the manufacture of semiconductor devices, memory disks and the like.
Isobe Akira,JPX ; Morita Tomotake,JPX, Polishing apparatus having retainer ring rounded along outer periphery of lower surface and method of regulating retain.
Chopra, Dinesh; Sinha, Nishant, Slurry for use with fixed-abrasive polishing pads in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods.
Kajiwara, Jiro; Moloney, Gerard S.; Wang, Huey-Ming; Hansen, David A.; Reyes, Alejandro, System and method for pneumatic diaphragm CMP head having separate retaining ring and multi-region wafer pressure control.
Seiji Katsuoka JP; Hozumi Yasuda JP; Tadakazu Sone JP; Shunichiro Kojima JP; Manabu Tsujimura JP, Workpiece polishing apparatus comprising a fluid pressure bag provided between a pressing surface and the workpiece and method of use thereof.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.