Organic light-emitting diode (OLED) display comprising flexible substrate, electronic device including the same, and method of manufacturing the OLED display
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-051/52
H01L-051/00
H01L-051/56
출원번호
US-0789212
(2015-07-01)
등록번호
US-9553280
(2017-01-24)
우선권정보
KR-10-2014-0160168 (2014-11-17)
발명자
/ 주소
Seo, Jungjoon
Hwang, Hyunbeen
Huh, In
출원인 / 주소
Samsung Display Co., Ltd.
대리인 / 주소
Knobbe Martens Olson & Bear LLP
인용정보
피인용 횟수 :
0인용 특허 :
0
초록▼
An organic light-emitting diode (OLED) display, electronic device including the same and method of manufacturing the OLED display are disclosed. In one aspect, the OLED display includes a first plastic layer, a first barrier layer formed over the first plastic layer and a first intermediate layer fo
An organic light-emitting diode (OLED) display, electronic device including the same and method of manufacturing the OLED display are disclosed. In one aspect, the OLED display includes a first plastic layer, a first barrier layer formed over the first plastic layer and a first intermediate layer formed over the first barrier layer. The OLED display also includes a second plastic layer formed over the first intermediate layer, a second intermediate layer formed over the second plastic layer and a second barrier layer formed over the second intermediate layer. The OLED display further includes an OLED layer formed over the second barrier layer and a thin-film encapsulation layer encapsulating the OLED layer.
대표청구항▼
1. An organic light-emitting diode (OLED) display, comprising: a first plastic layer;a first barrier layer formed over the first plastic layer;a first intermediate layer formed over the first barrier layer, wherein the first intermediate layer comprises amorphous silicon;a second plastic layer forme
1. An organic light-emitting diode (OLED) display, comprising: a first plastic layer;a first barrier layer formed over the first plastic layer;a first intermediate layer formed over the first barrier layer, wherein the first intermediate layer comprises amorphous silicon;a second plastic layer formed over the first intermediate layer;a second intermediate layer formed over the second plastic layer;a second barrier layer formed over the second intermediate layer;an OLED layer formed over the second barrier layer; anda thin-film encapsulation layer encapsulating the OLED layer. 2. The OLED display of claim 1, wherein the second intermediate layer comprises amorphous silicon. 3. The OLED display of claim 1, wherein the first intermediate layer comprises a metal thin film. 4. The OLED display of claim 1, wherein the second intermediate layer comprises a metal thin film. 5. The OLED display of claim 1, wherein an ultraviolet (UV) transmittance of the first intermediate layer is greater than or equal to about 10%. 6. The OLED display of claim 1, wherein each of the first plastic layer and the second plastic layer comprises at least one of the following materials: polyimide, polyethylene naphthalate, polyethylene terephthalate (PET), polyarylate, polycarbonate, polyethersulfone, and polyetherimide (PEI). 7. The OLED display of claim 1, wherein the second plastic layer has a thickness that is greater than that of the first plastic layer. 8. The OLED display of claim 1, wherein the second plastic layer has a viscosity that is less than that of the first plastic layer. 9. The OLED display of claim 1, wherein the first barrier layer comprises a first silicon nitride layer, wherein the second barrier layer comprises a second silicon nitride layer, and wherein a silicon nitride density of the second barrier layer is greater than that of the first silicon nitride layer. 10. The OLED display of claim 9, wherein the first barrier layer further comprises a metal oxide film or a silicon oxide film. 11. The OLED display of claim 9, wherein the second barrier layer further comprises a metal oxide film or a silicon oxide film. 12. The OLED display of claim 9, wherein the silicon nitride density of the first silicon nitride layer is greater than or equal to about 2.2 g/cm3 and is less than or equal to about 2.4 g/cm3. 13. The OLED display of claim 1, wherein the thin-film encapsulation layer comprises at least one of an inorganic layer and an organic layer. 14. An electronic device comprising: an organic light-emitting diode (OLED) display, comprising: a first plastic layer;a first barrier layer formed over the first plastic layer;a first intermediate layer formed over the first barrier layer, wherein the first intermediate layer comprises amorphous silicon;a second plastic layer formed over the first intermediate layer;a second barrier layer formed over the second plastic layer;an OLED layer formed over the second barrier layer; anda thin-film encapsulation layer encapsulating the OLED layer. 15. A method of manufacturing an organic light-emitting diode (OLED) display, comprising: preparing a carrier substrate;forming a mother flexible substrate on the carrier substrate, wherein the mother substrate comprises a first plastic layer, a first barrier layer, a first intermediate layer, a second plastic layer, and a second barrier layer that are sequentially stacked, wherein the first intermediate layer comprises amorphous silicon;forming a plurality of OLED layers on the mother flexible substrate;forming a thin-film encapsulation layer so as to encapsulate the OLED layers;separating the mother flexible substrate from the carrier substrate; anddividing the OLED layers formed on the mother flexible substrate into a plurality of display units. 16. The method of claim 15, wherein the separating of the mother flexible substrate from the carrier substrate comprises emitting laser light toward a surface of the carrier substrate that is opposite to a surface of the carrier substrate on which the mother flexible substrate is formed. 17. The method of claim 16, wherein the laser light is ultraviolet (UV) light. 18. The method of claim 15, wherein the carrier substrate is a glass substrate. 19. The method of claim 15, wherein the first barrier layer comprises at least a first silicon nitride layer, wherein the second barrier layer comprises a second silicon nitride layer, and wherein a silicon nitride density of the second silicon nitride layer is greater than that of the first silicon nitride layer.
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