Conductive thin film and transparent electrode including graphene oxide and carbon nanotube, and methods of producing the same
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01B-001/06
H01B-013/00
C03C-017/22
H01L-031/0224
H01B-001/04
H01L-051/44
출원번호
US-0951993
(2013-07-26)
등록번호
US-9576707
(2017-02-21)
우선권정보
KR-10-2011-0007965 (2011-01-26)
발명자
/ 주소
Lee, Hyoyoung
Hwang, Eun Hee
Lee, Hye Mi
Lee, Jung Hyun
Lee, Eun Kyo
Kim, Gi Youn
출원인 / 주소
Research & Business Foundation Sungkyunkwan University
대리인 / 주소
NSIP Law
인용정보
피인용 횟수 :
0인용 특허 :
1
초록
A conductive thin film, a transparent electrode, and methods of producing the same are provided. A method for preparing a conductive thin film may involve forming a layer of reduced graphene oxide and carbon nanotube on a substrate using a reducing agent containing a halogen atom.
대표청구항▼
1. A method for preparing a conductive thin film, the method comprising: forming a layer comprising reduced graphene oxide and carbon nanotube having a surface modified by carboxylic acid on a substrate using a reducing agent containing a halogen atom. 2. The method of claim 1, wherein the layer com
1. A method for preparing a conductive thin film, the method comprising: forming a layer comprising reduced graphene oxide and carbon nanotube having a surface modified by carboxylic acid on a substrate using a reducing agent containing a halogen atom. 2. The method of claim 1, wherein the layer comprising reduced graphene oxide and carbon nanotube having a surface modified by carboxylic acid is formed by: (S1) coating the substrate with a liquid having one of (a) a graphene oxide and carbon nanotube having a surface is modified by carboxylic acid, (b) a graphene oxide and a carbon nanotube, and (c) a reduced graphene oxide and a carbon nanotube, dispersed therein; and(S2) exposing the substrate obtained in S1 to a vapor of a solution comprising the reducing agent. 3. The method of claim 2, further including: centrifuging and sonifying the liquid before coating the substrate. 4. The method of claim 2, further including: performing heat treatment of the substrate exposed to the vapor under H2 atmosphere. 5. The method of claim 4, wherein the heat treatment of the substrate is performed under the H2 atmosphere at a temperature of 80° C. or greater and 150° C. or less, and the substrate is a polyethylene terephthalate. 6. The method of claim 4, wherein the heat treatment of the substrate is performed under the H2 atmosphere at a temperature of 100° C. or greater to 1500° C. or less, and the substrate is a glass or a Si/SiO2. 7. The method of claim 2, wherein a surfactant is used to disperse a carbon nanotube in a solvent and the solvent is coated on the substrate to form the layer comprising reduced graphene oxide and carbon nanotube having a surface modified by carboxylic acid. 8. The method of claim 7, wherein the surfactant is one selected from the group consisting of sodium dodecyl sulfate (SDS), sodium octylbenzene sulfonate (NaOBS), sodium dodecylbenzene sulfate (SDBS), TRITON X-100, sodium dodecyl sulfonate (SDSA), sodium butylbenzoate (NaBBS), dodecyl trimethyl ammonium bromide (DTAB), cetyl trimethyl ammonium bromide (CTAB), dextrin, polystyrene-polyethylene oxide (PS-PEO) and a combination thereof. 9. The method of claim 1, wherein the layer comprising reduced graphene oxide and carbon nanotube having a surface modified by carboxylic acid is formed by: (S1) coating the substrate with a liquid in which a graphene oxide is dispersed;(S2) exposing the substrate obtained in S1 to a vapor of a solution comprising the reducing agent;(S3) coating the substrate obtained in S2 with a liquid in which carbon nanotube having a surface modified by carboxylic acid is dispersed; and(S4) exposing the substrate obtained in S3 to a vapor of a solution comprising the reducing agent. 10. The method of claim 1, wherein the layer comprising reduced graphene oxide and carbon nanotube having a surface modified by carboxylic acid is formed by: (S1) coating the substrate with a liquid in which a graphene oxide is dispersed;(S2) exposing the substrate obtained in S1 to a vapor of a solution comprising the reducing agent; and(S3) coating the substrate obtained in S2 with a dispersion liquid in which a carbon nanotube is dispersed in a solvent. 11. The method of claim 1, wherein the layer comprising reduced graphene oxide and carbon nanotube having a surface modified by carboxylic acid is formed by: (S1) coating a substrate with a liquid in which a graphene oxide is dispersed;(S2) coating the substrate obtained in S1 with a liquid in which carbon nanotube having a surface modified by carboxylic acid is dispersed; and(S3) exposing the substrate obtained in S2 to a vapor of a solution comprising the reducing agent. 12. The method of claim 1, wherein the layer comprising reduced graphene oxide and carbon nanotube having a surface modified by carboxylic acid is formed by: (S1) coating the substrate with a liquid in which carbon nanotube having a surface modified by carboxylic acid is dispersed;(S2) coating the substrate obtained in S1 with a liquid in which a graphene oxide is dispersed; and(S3) exposing the substrate obtained in S2 to a vapor of a solution comprising the reducing agent. 13. The method of claim 1, wherein the substrate comprises one of glass, Si/SiO2 and polyethylene terephthalate. 14. The method of claim 1, wherein the layer comprising reduced graphene oxide and carbon nanotube having a surface modified by carboxylic acid is formed by: coating the substrate with a liquid comprising graphene oxide or carbon nanotube,wherein coating is performed using one of a spin coating method, a dip coating method, a bar coater method and a spray coating method. 15. The method of claim 1, wherein the layer comprising reduced graphene oxide and carbon nanotube having a surface modified by carboxylic acid is formed by: coating the substrate with a liquid comprising graphene oxide or carbon nanotube, the coating involving a spin coating method with the rotation speed of the spin coating ranging from 400 rpm to 6000 rpm. 16. The method for claim 1, wherein the reducing agent containing the halogen atom is selected from the group consisting of HI, HCl and HBr. 17. The method of claim 1, further comprising: doping the substrate and the layer comprising graphene oxide and carbon nanotube having a surface modified by carboxylic acid with a dopant selected from the group consisting of HNO3, H2SO4, and SOCl2 by exposing the substrate and the layer to a vapor of the respective dopant. 18. A method for preparing a conductive thin film, the method comprising: forming a layer comprising reduced graphene oxide and carbon nanotube on a substrate using a reducing agent containing a halogen atom,wherein graphene oxide on the substrate is reduced using a vapor of a solution that comprises the reducing agent containing the halogen atom, andwherein the solution comprises a mixture of HI solution and a weak acid. 19. The method of claim 18, wherein the weak acid is selected from the group consisting of acetic acid, trifluoroacetic acid, carbonic acid, formic acid and benzoic acid.
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이 특허에 인용된 특허 (1)
Lee, Hyo Young; Moon, In Kyu; Lee, Jung Hyun, Graphene oxide reducing agent comprising a reducing agent containing a halogen element, method for manufacturing a reduced graphene oxide using same, and use of the reduced graphene oxide manufactured by the method.
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