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An embodiment of a method for manufacturing a semiconductor wafer includes providing a monocrystalline silicon wafer, epitaxially growing a first layer of a first material on the silicon wafer, and epitaxially growing a second layer of a second material on the first layer. For example, said first ma

An embodiment of a method for manufacturing a semiconductor wafer includes providing a monocrystalline silicon wafer, epitaxially growing a first layer of a first material on the silicon wafer, and epitaxially growing a second layer of a second material on the first layer. For example, said first material may be monocrystalline silicon carbide, and said second material may be monocrystalline silicon.

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1. A method for making a semiconductor wafer comprising: providing a substrate comprising monocrystalline silicon;forming a silicon carbide layer over the substrate; andepitaxially forming a monocrystalline silicon layer over the silicon carbide layer;the substrate, the silicon carbide layer, and th

1. A method for making a semiconductor wafer comprising: providing a substrate comprising monocrystalline silicon;forming a silicon carbide layer over the substrate; andepitaxially forming a monocrystalline silicon layer over the silicon carbide layer;the substrate, the silicon carbide layer, and the monocrystalline silicon layer having a bow less than 30 μm. 2. The method of claim 1 further comprising adding dopant to the substrate. 3. The method of claim 1 further comprising adding dopant to the silicon carbide layer. 4. The method of claim 1 further comprising adding dopant to the monocrystalline silicon layer. 5. The method of claim 1 wherein the silicon carbide layer has a thickness in a range of 2-6 μm. 6. The method of claim 1 wherein the silicon carbide layer comprises a monocrystalline silicon carbide layer. 7. The method of claim 1 wherein the silicon carbide layer comprises a 3C silicon carbide layer. 8. The method of claim 1 wherein the monocrystalline silicon layer has a thickness in a range of 1-3 μm. 9. The method of claim 1 wherein the substrate, the silicon carbide layer, and the monocrystalline layer have a bow in a range of 20-30 μm. 10. The method of claim 1 wherein the substrate, the silicon carbide layer, and the monocrystalline layer have a diameter in a range of 6-8 inches. 11. A method of making a semiconductor wafer comprising: providing a substrate of monocrystalline silicon;forming a silicon carbide layer over the entire substrate; andforming a monocrystalline silicon layer consisting of monocrystalline silicon over the entire silicon carbide layer;the substrate, the silicon carbide layer, and the monocrystalline silicon layer having a bow less than or equal to 30 μm. 12. The method of claim 11 further comprising adding dopant to the substrate. 13. The method of claim 11 further comprising adding dopant to the silicon carbide layer. 14. The method of claim 11 further comprising adding dopant to the monocrystalline silicon layer. 15. The method of claim 11 wherein the silicon carbide layer has a thickness in a range of 2-6 μm. 16. The method of claim 11 wherein the silicon carbide layer comprises a monocrystalline silicon carbide layer. 17. The method of claim 11 wherein the silicon carbide layer comprises a 3C silicon carbide layer. 18. The method of claim 11 wherein the monocrystalline silicon layer has a thickness in a range of 1-3 μm. 19. The method of claim 11 wherein the substrate, the silicon carbide layer, and the monocrystalline layer have a bow in a range of 20-30 μm. 20. The method of claim 11 wherein the substrate, the silicon carbide layer, and the monocrystalline layer have a diameter in a range of 6-8 inches. 21. A method for making a semiconductor wafer comprising: providing a substrate comprising monocrystalline silicon;forming a silicon carbide layer over the substrate and having a thickness in a range of 2-6 μm; andepitaxially forming a monocrystalline silicon layer over the silicon carbide layer and having a thickness in a range of 1-3 μm;the substrate, the silicon carbide layer, and the monocrystalline silicon layer having a bow in a range of 20-30 μm. 22. The method of claim 21 further comprising adding dopant to the substrate. 23. The method of claim 21 further comprising adding dopant to the silicon carbide layer. 24. The method of claim 21 further comprising adding dopant to the monocrystalline silicon layer. 25. The method of claim 21 wherein the silicon carbide layer comprises a monocrystalline silicon carbide layer. 26. The method of claim 21 wherein the silicon carbide layer comprises a 3C silicon carbide layer. 27. The method of claim 21 wherein the substrate, the silicon carbide layer, and the monocrystalline layer have a diameter in a range of 6-8 inches.