IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0238979
(2012-10-31)
|
등록번호 |
US-9589801
(2017-03-07)
|
국제출원번호 |
PCT/US2012/062746
(2012-10-31)
|
국제공개번호 |
WO2013/066977
(2013-05-10)
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발명자
/ 주소 |
- Herbots, Nicole
- Whaley, Shawn
- Culbertson, Robert
- Bennett-Kennett, Ross
- Murphy, Ashlee
- Bade, Matthew
- Farmer, Sam
- Hudzietz, Brance
|
출원인 / 주소 |
- Arizona Board Of Regents, A Body Corporated Of The State Of Arizona, Acting For And On Behalf Of Arizona State University
|
대리인 / 주소 |
McDonnell Boehnen Hulbert & Berghoff LLP
|
인용정보 |
피인용 횟수 :
0 인용 특허 :
12 |
초록
▼
Substrates may be bonded according to a method comprising contacting a first bonding surface of a first substrate with a second bonding surface of a second substrate to form an assembly in the presence of an steam atmosphere under suitable conditions to form a bonding layer between the first and sec
Substrates may be bonded according to a method comprising contacting a first bonding surface of a first substrate with a second bonding surface of a second substrate to form an assembly in the presence of an steam atmosphere under suitable conditions to form a bonding layer between the first and second surfaces, wherein the first bonding surface comprises a polarized surface layer; the second bonding surface comprises a hydrophilic surface layer; the first and second bonding surfaces are different.
대표청구항
▼
1. A method for bonding substrates comprising contacting a first bonding surface of a first substrate with a second bonding surface of a second substrate in a vessel; andintroducing steam into the vessel to form an assembly of the first substrate and the second substrate in a pressurized atmosphere
1. A method for bonding substrates comprising contacting a first bonding surface of a first substrate with a second bonding surface of a second substrate in a vessel; andintroducing steam into the vessel to form an assembly of the first substrate and the second substrate in a pressurized atmosphere comprising steam and oxygen, wherein the pressurized atmosphere has a relative humidity above 80% and a temperature between about 25° C. and about 200° C., to form a hydroxylated cross-bridging interphase that binds the first bonding surface and the second bonding surface;wherein no mechanical compression is applied to the assembly;wherein the pressurized atmosphere has a pressure between about 1 atm and about 1.1 atm;wherein the first bonding surface comprises a polarized surface layer;wherein the second bonding surface comprises a hydrophilic surface layer; andwherein the first bonding surface and the second bonding surface are different. 2. The method of claim 1, wherein the first substrate and the second substrate each independently comprises (i) a group IV element, a IV-IV multi-element semiconductor or a IV-IV-IV multi-element semiconductor;(ii) a polymorphic phase, oxide, nitride, oxynitride, carbide, oxycarbide, oxynitrocarbide, or hydride of a group IV element, or a IV-IV multi-element semiconductor, or a IV-IV-IV multi-element semiconductor;(iii) Al, Al2O3, Ti, TiO2, or any oxide, nitride, oxynitride, carbide, oxycarbide, and oxynitrocarbide of Ti, TiW, Nb, Ta, Zr, Er, or La, or mixtures thereof, or a peroskvite compound used in refractory MOS gates; or(iv) a group II-V or III-VI or tertiary alloys thereof. 3. The method of claim 2, wherein the first substrate and the second substrate each independently comprises Si, SixGe1-x, GaAs, Si1-x-yGexCy, Si3(1-x)Ge3xN4(1-δ), Ge, Ga1-xAlxAs, SixGe(1-x)(OyN1-y)n, Si1-x-yGexCy (OyN1-x)n, (Si1-x-yGexCy)3N4-x-y, SiO2, GeO2, SixGe1-xO2, Si1-x-yGexCyO2, GexC1-xO2, Si3N4, Si1-x-yGexSnyCz, GexC1-x, SiGe, SiGe oxide, SiN, Sic, Al, Al2O3 or Si3(1-x)Ge3xN4(1-δ). 4. The method of claim 2, wherein the first substrate and the second substrate each independently comprises TiO2, or any oxide, nitride, oxynitride, carbide, oxycarbide, and oxynitrocarbide of Ti, TiW, Nb, Ta, Zr, Er, or La, or mixtures thereof. 5. The method of claim 2, wherein the first substrate and second substrate each independently comprises BN, BP, BAs, BSb, BBi, AlN, AlP, AlAs, AlSb, AlBi, GaN, GaP, GaAs, GaSb, GaBi, InN, InP, InAs, InSb, InBi, TlN, TlP, TlAs, TlSb, TlBi, CdSe, CdS, CdTe, ZnO, ZnSe, ZnS, ZnTe, BexZn1-xSe (where x is greater than 0 and less than 1 (e.g., Be0.45Zn0.55Se)), CdZnTe (CZT), HgCdTe or HgZnTe. 6. The method of claim 2, wherein one or more of the group IV element, IV-IV multi-element semiconductor, IV-IV-IV multi-element semiconductor, group II-V alloy, group III-VI alloy or tertiary alloy is doped. 7. The method of claim 2, wherein any of (i)-(iii) has a hydroxylated-terminated surface. 8. The method of claim 2, wherein any of (i)-(iii) has a hydride-terminated surface. 9. The method of claim 1, wherein the first substrate and the second substrate are each wafers or beads. 10. The method of claim 1, wherein the atmosphere is water saturated air. 11. The method of claim 1, wherein the contacting is maintained for up to 2 hours. 12. The method of claim 1, wherein the hydroxylated cross-bridging interface has a bonding strength of between about 8 MPa and about 12 MPa. 13. The method of claim 1, wherein the first substrate is a Si wafer and the second substrate is a silicate wafer. 14. The method of claim 13, wherein the first bonding surface is O2H2Si(1×1)(100) and is formed by cleaning the Si wafer with the Herbots-Atluri clean. 15. The method of claim 13, wherein the second bonding surface is formed by chemical etching followed by chemical oxidation of the silicate wafer. 16. The method of claim 13, wherein the hydroxylated cross-bridging interface consists essentially of silicon, oxygen, and hydrogen. 17. The method of claim 1, wherein the first substrate is a Si wafer and the first bonding surface is O2H2Si(1×1)(100). 18. The method of claim 1, wherein the second substrate is a silicate wafer and the second bonding surface is SiOx, where 0
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