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Techniques for coupling light into graphene using a planar photonic crystal having a resonant cavity characterized by a mode volume and a quality factor and at least one graphene layer positioned in proximity to the planar photonic crystal to at least partially overlap with an evanescent field of th

Techniques for coupling light into graphene using a planar photonic crystal having a resonant cavity characterized by a mode volume and a quality factor and at least one graphene layer positioned in proximity to the planar photonic crystal to at least partially overlap with an evanescent field of the resonant cavity. At least one mode of the resonant cavity can couple into the graphene layer via evanescent coupling. The optical properties of the graphene layer can be controlled, and characteristics of the graphene-cavity system can be detected. Coupling light into graphene can include electro-optic modulation of light, photodetection, saturable absorption, bistability, and autocorrelation.

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1. A device for coupling input light from a light source into graphene, comprising: a planar photonic crystal having a resonant cavity characterized by a mode volume and a quality factor, adapted to receive the input light into one or more modes and an evanescent field generated in response thereto;

1. A device for coupling input light from a light source into graphene, comprising: a planar photonic crystal having a resonant cavity characterized by a mode volume and a quality factor, adapted to receive the input light into one or more modes and an evanescent field generated in response thereto; andat least one graphene layer positioned adjacent the planar photonic crystal to at least partially overlap with the evanescent field of the resonant cavity, whereby at least one mode of the resonant cavity is coupled into the graphene layer via evanescent coupling. 2. The device of claim 1, wherein the mode volume comprises a volume on the order of a cubic wavelength, wherein the input light comprises radiation having a bandwidth within the near infrared to visible spectrum, and wherein the at least one resonant mode comprises a mode having a bandwidth within the near infrared to visible spectrum. 3. The device of claim 1, further comprising a coupling device selected from the group consisting of a waveguide or an objective lens, positioned and adapted to couple the input light into the resonant cavity. 4. The device of claim 1, wherein the planar photonic crystal comprises a crystal formed from one or more of the group consisting of silicon, germanium, gallium arsenide, gallium phosphide, indium phosphide, or polymers. 5. The device of claim 1, wherein the at least one mode of the resonant cavity comprises a mode overcoupled into the graphene layer, further comprising a voltage source electrically coupled via a first electrode to the graphene layer, and via a second electrode to a second layer to create an electric field perpendicular to the graphene layer upon application of a voltage, wherein the voltage source is adapted to apply a voltage tuned to induce Pauli blocking and thereby modulate a transmission and refractive index of the graphene layer, thereby providing electro-optic modulation. 6. The device of claim 5, wherein the second layer includes a silicon substrate layer adjacent the planar photonic crystal opposite the graphene layer. 7. The device of claim 5, wherein the second layer includes a transparent contact formed from one or more of the group consisting of indium tin oxide, a conductive polymer, or an electrolyte. 8. The device of claim 7, wherein the transparent contact layer is disposed between the graphene layer and the planar photonic crystal. 9. The device of claim 7, wherein the transparent contact layer is disposed adjacent the graphene layer opposite the planar photonic crystal. 10. The device of claim 1, wherein the at least one mode of the resonant cavity comprises a mode critically coupled into the graphene layer, further comprising a photocurrent detection circuit, electrically coupled with the graphene layer via a first and second electrode, adapted to detect photocurrent from coupling of the at least one mode of the resonant cavity into the graphene layer. 11. The device of claim 10, wherein the first electrode is positioned closer to the resonant cavity relative the second electrode to induce an internal potential difference on the graphene layer. 12. The device of claim 10, further comprising a voltage source electrically coupled to the first and second electrodes, to create a bias. 13. The device of claim 1, wherein the light source comprises a light source adapted to vary the intensity of the input light and a resulting intensity of the at least one resonant mode of the resonant cavity, and configured to emit light having an intensity to saturate the graphene layer and increase the quality factor of the resonant cavity, thereby creating a bistablity. 14. A method for coupling input light into a planar photonic crystal having a resonant cavity with a mode volume, a quality factor, and at least one mode, comprising: providing a graphene layer adjacent the planar photonic crystal to at least partially overlap with an evanescent field of at least one of the at least one mode of the resonant cavity;controlling one or more optical properties of the graphene layer;coupling an input light into the resonant cavity; anddetecting a characteristic in response to the input light. 15. The method of claim 14, wherein controlling the one or more optical properties of the graphene layer includes one or more of the group consisting of positioning the graphene layer to achieve a predetermined level of coupling, electrically gating the graphene layer to modulate a transmission and refractive index of the graphene layer, electrically biasing the graphene layer to enhance a photocurrent therein, or varying the intensity of the input light to saturate the graphene layer and create a bistability. 16. The method of claim 15, wherein detecting the characteristic in response to the input light includes processing an output current from the graphene layer corresponding to the input light coupled into the resonant cavity. 17. The method of claim 14, wherein detecting the characteristic includes processing an output light from the resonant cavity. 18. The method of claim 17, further comprising modulating transmission of the graphene layer, wherein processing the output light from the resonant cavity includes processing transmitted or reflected light and detecting a modulation of transmission intensity of the graphene layer. 19. The method of claim 17, further comprising varying the intensity of the input light to saturate the graphene layer and create a bistability, wherein processing the output light from the resonant cavity further includes detecting a state of the graphene layer corresponding to the bistability. 20. The method of claim 19, further comprising operating the graphene layer as one or more of a bistable switch, an optical memory, or an optical logic gate.