Hetero-switching layer in a RRAM device and method
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
G11C-011/00
H01L-045/00
G11C-013/00
G11C-011/56
출원번호
US-0611022
(2015-01-30)
등록번호
US-9601692
(2017-03-21)
발명자
/ 주소
Jo, Sung Hyun
출원인 / 주소
CROSSBAR, INC.
대리인 / 주소
Amin, Turocy & Watson, LLP
인용정보
피인용 횟수 :
0인용 특허 :
193
초록▼
A semiconductor device includes first electrodes disposed upon a substrate, wherein each first electrode comprises a metal containing material, switching devices disposed overlying the first electrodes, wherein each switching device comprises a first switching material, a second switching material,
A semiconductor device includes first electrodes disposed upon a substrate, wherein each first electrode comprises a metal containing material, switching devices disposed overlying the first electrodes, wherein each switching device comprises a first switching material, a second switching material, and an active metal, wherein the first switching material is disposed overlying and contacting the first electrodes, wherein the second switching material is disposed overlying and contacting the first switching material, wherein the active metal is disposed overlying and contacting the second switching material, wherein the first switching material is characterized by a first switching voltage, wherein the second switching material is characterized by a second switching voltage greater than the first switching voltage; and second electrodes disposed above the switching devices, comprising the metal material, and wherein each of the second electrodes is electrically coupled to the active metal material of the switching devices.
대표청구항▼
1. A semiconductor device comprising: a substrate;a first plurality of electrodes disposed upon the substrate, wherein each electrode from the first plurality of electrodes comprises a metal containing material;a plurality of resistive switching devices disposed overlying the plurality of first elec
1. A semiconductor device comprising: a substrate;a first plurality of electrodes disposed upon the substrate, wherein each electrode from the first plurality of electrodes comprises a metal containing material;a plurality of resistive switching devices disposed overlying the plurality of first electrodes, wherein each resistive switching device from the plurality of resistive switching devices comprises a first resistive switching material, a second resistive switching material, and at least an active metal material, wherein the first resistive switching material is disposed overlying the first electrode, wherein the second resistive switching material is disposed overlying and contacting the first resistive switching material, wherein the active metal material is disposed overlying the second resistive switching material, wherein the first resistive switching material is characterized by a first switching voltage having a first amplitude, wherein the second resistive switching material is characterized by a second switching voltage having a second amplitude, and wherein the first amplitude is less than the second amplitude;a second plurality of electrodes disposed above the plurality of resistive switching devices, wherein each electrode from the second plurality of electrodes comprises the metal material, and wherein each electrode from the second plurality of electrodes is disposed overlying and electrically coupled to the active metal material of the resistive switching devices from the plurality of resistive switching devices. 2. The device of claim 1 wherein the metal containing material in each electrode from the first plurality of electrodes comprises particles of metal selected from a group consisting of: copper, tungsten, aluminum; wherein each electrode from the first plurality of electrodes also comprises a barrier material selected from a group consisting of titanium, titanium nitride, tungsten, tungsten nitride, tantalum, tantalum nitride, and titanium tungsten; andwherein the first resistive switching material is disposed overlying and contacting the barrier material. 3. The device of claim 1 wherein the metal containing material in each electrode from the plurality of electrodes comprises particles of copper metal; and wherein each electrode from the first plurality of electrodes includes tantalum nitride. 4. The device of claim 1 wherein the first resistive switching material is configured to maintain a high resistance state until after the first switching voltage is applied, after which the first resistive switching material is configured to enter a low resistance state. 5. The device of claim 1 wherein the first resistive switching material is characterized by the first switching voltage having the first amplitudes within a range of about 0.1 volts to about 1 volt. 6. The device of claim 1 wherein the first resistive switching material comprises a solid electrolyte. 7. The device of claim 1 wherein the first resistive switching material is selected from a group consisting of: a chalcogenide, a metal oxide, GeS, GeSe, W03, SbTe, GexSy, GexSey, SbxTey, AgxSey, CuxSy, WOx, TiOx, AlOx, HfOx, CuOx, and TaOx, where 0
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