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Methods of forming carbon films, structures and devices including the carbon films, and systems for forming the carbon films are disclosed. A method includes depositing a metal carbide film using atomic layer deposition (ALD). Metal from the metal carbide film is removed from the metal carbide film

Methods of forming carbon films, structures and devices including the carbon films, and systems for forming the carbon films are disclosed. A method includes depositing a metal carbide film using atomic layer deposition (ALD). Metal from the metal carbide film is removed from the metal carbide film to form a carbon film. Because the films are formed using ALD, the films can be relatively conformal and can have relatively uniform thickness over the surface of a substrate.

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1. A method of forming a carbon film, the method comprising the steps of: providing a substrate;depositing, using atomic layer deposition (ALD), a first layer of metal carbide onto the substrate;in a reaction chamber having a pressure in the range of about 50 mTorr to about 600 Torr and having a tem

1. A method of forming a carbon film, the method comprising the steps of: providing a substrate;depositing, using atomic layer deposition (ALD), a first layer of metal carbide onto the substrate;in a reaction chamber having a pressure in the range of about 50 mTorr to about 600 Torr and having a temperature less than 500° C., removing by etching metal from the layer of metal carbide to form a layer of carbon on the substrate,wherein the step of removing metal is performed after one or more ALD cycles to form the layer of carbon and the method further comprises a step of depositing, using ALD, a second layer of metal carbide over the layer of carbon. 2. The method of forming a carbon film of claim 1, wherein the step of providing a substrate comprises providing a substrate comprising features having an aspect ratio greater than or equal to 10. 3. The method of claim 2, wherein the aspect ratio is greater than or equal to 15. 4. The method of claim 1, wherein the step of providing a substrate comprises providing a sacrificial substrate. 5. The method of claim 1, wherein the step of removing metal comprises exposing the metal carbide to one or more halogen gases selected from the group consisting of chlorine, bromine and iodine. 6. The method of claim 1, wherein the step of removing metal comprises exposing the metal carbide to a plasma excited species containing one or more of plasma-excited chlorine, plasma-excited bromine and plasma-excited iodine. 7. The method of claim 1, wherein the temperature is less than 350° C. 8. The method of claim 1, wherein the step of removing metal is performed after 20 or more ALD cycles. 9. The method of claim 1, wherein the step of depositing and the step of removing metal by etching are performed in the same reaction chamber without breaking vacuum between the steps. 10. The method of claim 1, wherein a duration of the step of removing is determined by monitoring an endpoint for the removing metal step. 11. The method of claim 1, wherein a duration of the step of removing is determined by monitoring etch products during the step of removing metal. 12. The method of claim 1, wherein the step of depositing the first layer comprises depositing ten monolayers or less of the metal carbide. 13. The method of claim 1, further comprising a step of exposing the layer of carbon to an anneal process after the step of removing metal from the layer of metal carbide. 14. The method of claim 13, wherein the anneal process is performed in an environment comprising one or more gases selected from the group consisting of nitrogen, hydrogen, ammonia, hydrazine and hydrazine derivatives. 15. The method of claim 13, wherein a structure of the layer of carbon is transformed during the anneal process. 16. The method of claim 2, wherein the aspect ratio is greater than or equal to 20. 17. The method of claim 1, wherein the step of removing is performed after each ALD cycle. 18. The method of claim 13, wherein a temperature during the anneal process ranges from about 150° C. to about 1200° C. 19. The method of claim 13, wherein a temperature during the anneal process ranges from about 200° C. to about 400° C. 20. The method of claim 5, wherein the one or more halogen gases are exposed to a direct plasma, an indirect plasma, or a thermal excitation.