Method of fabricating semiconductor light emitting device
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/00
H01L-033/00
H01L-033/06
H01L-033/32
출원번호
US-0238047
(2016-08-16)
등록번호
US-9614121
(2017-04-04)
우선권정보
KR-10-2016-0010150 (2016-01-27)
발명자
/ 주소
Choi, Yong Seok
Kim, Chul Min
Shin, Dong Gyu
Lee, Ho Chul
Cheon, Joo Young
Rhee, Do Young
Lee, Jeong Wook
출원인 / 주소
Samsung Electronics Co., Ltd.
대리인 / 주소
Onello & Mello, LLP
인용정보
피인용 횟수 :
0인용 특허 :
40
초록▼
A method of fabricating a semiconductor light-emitting device is provided that includes forming a first conductivity-type semiconductor layer, forming an active layer by alternately forming a plurality of quantum well layers grown at a first temperature and a plurality of quantum barrier layers grow
A method of fabricating a semiconductor light-emitting device is provided that includes forming a first conductivity-type semiconductor layer, forming an active layer by alternately forming a plurality of quantum well layers grown at a first temperature and a plurality of quantum barrier layers grown at a second temperature higher than the first temperature, and forming a second conductivity-type semiconductor layer.
대표청구항▼
1. A method of fabricating a semiconductor light-emitting device comprising the steps of: forming a first conductivity-type semiconductor layer;forming an active layer on the first conductivity-type semiconductor layer by alternately forming a plurality of quantum well layers grown at a first temper
1. A method of fabricating a semiconductor light-emitting device comprising the steps of: forming a first conductivity-type semiconductor layer;forming an active layer on the first conductivity-type semiconductor layer by alternately forming a plurality of quantum well layers grown at a first temperature and a plurality of quantum barrier layers grown at a second temperature higher than the first temperature; andforming a second conductivity-type semiconductor layer on the active layer,wherein the plurality of quantum barrier layers include a portion grown in a rising-temperature section in which a temperature is increased from the first temperature to the second temperature, andalso wherein the plurality of quantum barrier layers are grown in a mixed gas atmosphere including hydrogen gas, and a partial pressure of the hydrogen gas is controlled to have a first partial pressure having a constant level in the rising-temperature section and is adjusted to have a second partial pressure having a constant level, lower than the first partial pressure, at the second temperature. 2. The method of claim 1, wherein the first partial pressure of the hydrogen gas is 2.5 vol % to 20.0 vol % of a partial pressure of the mixed gas atmosphere. 3. The method of claim 1, wherein the second partial pressure of the hydrogen gas is 1.4 vol % to 20.0 vol % of a partial pressure of the mixed gas atmosphere. 4. The method of claim 1, wherein the second partial pressure is lower than the first partial pressure by 1.1 vol % to 18.6 vol %. 5. The method of claim 1, wherein a difference between the first temperature and the second temperature is 50° C. to 300° C. 6. The method of claim 1, wherein the rising-temperature section is maintained for 10 seconds to 600 seconds. 7. The method of claim 1, wherein each of the plurality of quantum well layers is formed by supplying an indium source gas at a constant partial pressure at the first temperature. 8. The method of claim 7, wherein the indium source gas is trimethlyindium (TMIn). 9. The method of claim 1, wherein each of the plurality of quantum well layers is grown in a mixed gas atmosphere including the hydrogen gas, and a partial pressure of the hydrogen gas at which each of the plurality of quantum well layers is grown is a third partial pressure, the third partial pressure being lower than the second partial pressure and having a constant level during the quantum well layer growth step. 10. A method of fabricating a semiconductor light-emitting device comprising the steps of: forming a first conductivity-type nitride semiconductor layer;forming an active layer on the first conductivity-type nitride semiconductor layer; andforming a second conductivity-type nitride semiconductor layer on the active layer,wherein the active layer has a structure in which a plurality of quantum barrier layers and a plurality of quantum well layers including indium are alternately stacked,the plurality of quantum barrier layers includes at least one quantum barrier layer grown in a rising-temperature section in which a growth temperature is increased, andduring the times in which the plurality of quantum barrier layers are grown, an excess amount of hydrogen gas is supplied, and a first partial pressure of the hydrogen gas in the rising-temperature quantum barrier layer growth section is higher than a second partial pressure thereof in a remaining quantum barrier layer growth section. 11. The method of claim 10, wherein indium agglomerated on a surface of at least one quantum well layer of the plurality of quantum well layers is removed by the hydrogen gas supplied during the rising-temperature section. 12. The method of claim 10, wherein the hydrogen gas is supplied according to a stepped profile in which a partial pressure of the hydrogen gas is decreased from the first partial pressure to the second partial pressure. 13. The method of claim 10, wherein a growth temperature at which a quantum barrier layer is formed is higher than a growth temperature at which a quantum well layer is formed. 14. The method of claim 10, wherein a constant amount of an indium source is supplied during the time in which a quantum well layer is grown. 15. The method of claim 10, wherein each of the plurality of quantum well layers is grown in a mixed gas atmosphere including the hydrogen gas, and a partial pressure of the hydrogen gas at which each of the plurality of quantum well layers is grown is a third partial pressure lower than the second partial pressure and having a constant level during the quantum well layer growth step. 16. A method of fabricating a semiconductor light-emitting device comprising the sequential steps of: (a) forming a first conductivity-type semiconductor on a substrate or on a buffer layer disposed on a substrate;(b) forming an active layer on the first conductivity-type semiconductor, wherein the active layer sequentially comprises: (i) a first quantum barrier layer in contact with the first conductivity-type semiconductor that includes a portion formed at an initial quantum barrier layer growth temperature T2 in an atmosphere that includes an excess amount of hydrogen gas at a substantially constant partial pressure b3; (ii) at least a first quantum well layer formed on the first quantum barrier layer at a substantially constant quantum well layer growth temperature T1, that is 50° C. to 300° C. less than T2, and in an atmosphere that includes hydrogen gas at a substantially constant partial pressure b1, that is lower than b3; and (iii) at least a second quantum barrier layer formed on the first quantum well layer, wherein the second quantum barrier layer is at least partially formed during a rising-temperature growth period during which the temperature increases from T1 to T2 and the atmosphere includes hydrogen gas at the substantially constant partial pressure b3; and,(c) forming a second conductivity-type semiconductor layer on the active layer. 17. The method of claim 16 wherein the first quantum barrier layer further includes a portion that is formed during a falling-temperature growth period during which the temperature drops from T2 to T1. 18. The method of claim 17 wherein the second quantum barrier layer further includes a portion that is formed during a substantially constant temperature growth period at temperature T2, and/or formed during falling-temperature growth period where the temperature drops from T2 to T1, and in an atmosphere that includes hydrogen gas at a substantially constant partial pressure b2, which is greater than b1 and less than b3. 19. The method of claim 18 further wherein a second quantum well layer is formed on the second quantum barrier layer at the substantially constant temperature T1 and in an atmosphere that includes hydrogen gas at the substantially constant partial pressure b1. 20. The method of claim 18 wherein: T1 is 850° C. to 900° C. or less; b3 is 2.5 vol % to 20.0 vol % of the mixed gas atmosphere; and b2 is 1.4 vol % to 20.0 vol % of the mixed gas atmosphere.
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