Laminated composite made up of an electronic substrate and a layer arrangement comprising a reaction solder
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
B22F-007/00
B32B-015/01
B23K-001/00
B23K-035/30
B23K-035/02
H01L-023/00
B23K-001/19
B23K-101/42
출원번호
US-0348747
(2012-09-21)
등록번호
US-9630379
(2017-04-25)
우선권정보
DE-10 2011 083 931 (2011-09-30)
국제출원번호
PCT/EP2012/068678
(2012-09-21)
국제공개번호
WO2013/045370
(2013-04-04)
발명자
/ 주소
Kalich, Thomas
Frueh, Christiane
Wetzl, Franz
Hohenberger, Bernd
Holz, Rainer
Fix, Andreas
Guyenot, Michael
Feiock, Andrea
Guenther, Michael
Rittner, Martin
출원인 / 주소
Robert Bosch GmbH
대리인 / 주소
Michael Best & Friedrich LLP
인용정보
피인용 횟수 :
0인용 특허 :
3
초록▼
Laminated composite (10) comprising at least one electronic substrate (11) and an arrangement of layers (20, 30) made up of at least a first layer (20) of a first metal and/or a first metal alloy and of a second layer (30) of a second metal and/or a second metal alloy adjacent to this first layer (2
Laminated composite (10) comprising at least one electronic substrate (11) and an arrangement of layers (20, 30) made up of at least a first layer (20) of a first metal and/or a first metal alloy and of a second layer (30) of a second metal and/or a second metal alloy adjacent to this first layer (20), wherein the melting temperatures of the first and second layers are different, and wherein, after a thermal treatment of the arrangement of layers (20, 30), a region with at least one intermetallic phase (40) is formed between the first layer and the second layer, wherein the first layer (20) or the second layer (30) is formed by a reaction solder which consists of a mixture of a basic solder with an AgX, CuX or NiX alloy, wherein the component X of the AgX, CuX or NiX alloy is selected from the group consisting of B, Mg, Al, Si, Ca, Se, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Y, Zr, Nb, Mo, Ag, In, Sn, Sb, Ba, Hf, Ta, W, Au, Bi, La, Ce, Pr, Nd, Gd, Dy, Sm, Er, Tb, Eu, Ho, Tm, Yb and Lu and wherein the melting temperature of the AgX, CuX or NiX alloy is greater than the melting temperature of the basic solder. The invention also relates to a method for forming a laminated composite (10) and to a circuit arrangement containing a laminated composite (10) according to the invention.
대표청구항▼
1. A laminated composite (10) comprising at least one electronic substrate (11) and a layer arrangement (20, 30) including at least a first layer of at least one of a first metal and a first metal alloy and including a second layer, adjoining said first layer, of at least one of a second metal and a
1. A laminated composite (10) comprising at least one electronic substrate (11) and a layer arrangement (20, 30) including at least a first layer of at least one of a first metal and a first metal alloy and including a second layer, adjoining said first layer, of at least one of a second metal and a second metal alloy, wherein melting temperatures of the first layer and of the second layer are different, further comprising a region with at least one intermetallic phase (40) between the first layer and the second layer,wherein one of the first layer and the second layer is formed by a reaction solder which consists of a mixture of a base solder with an AgX, CuX or NiX alloy, wherein the component X in the AgX, CuX or NiX alloy is selected from the group consisting of B, Mg, Al, Si, Ca, Se, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Y, Zr, Nb, Mo, Ag, In, Sn, Sb, Ba, Hf, Ta, W, Au, Bi, La, Ce, Pr, Nd, Gd, Dy, Sm, Er, Tb, Eu, Ho, Tm, Yb and Lu,wherein the melting temperature of the AgX, CuX or NiX alloy is higher than the melting temperature of the base solder,wherein the other of the first layer and the second layer, which is not formed by a reaction solder, is an Ag-sintered layer,wherein the AgX, CuX or NiX alloy does not have the same composition as the base solder,wherein the Ag, Cu or Ni content of the layer formed by the reaction solder is between 20% by weight and 80% by weight; andwherein the AgX, CuX or NiX alloy is present in a mean particle size of between 1 nm and 50 μm in the mixture with the base solder. 2. The laminated composite (10) as claimed in claim 1, characterized in that the base solder is selected from the group consisting of SnCu, SnAg, SnAu, SnBi, SnNi, SnZn, SnIn, CuNi, CuAg, AgBi, ZnAl, BiIn, InAg, InGa or a ternary, quaternary or a higher-component alloy made up of a mixture thereof. 3. The laminated composite (10) as claimed in claim 1, characterized in that the first layer (20) or the second layer (30) contains no lead. 4. The laminated composite (10) as claimed in claim 1, characterized in that the reaction solder has a processing temperature of less than 500° C. 5. The laminated composite (10) as claimed in claim 1, characterized in that the intermetallic phase (40) has a higher melting point than the first or second layer. 6. The laminated composite (10) as claimed in claim 1, characterized in that at least one of the first layer (20) and the second layer (30) makes contact with the at least one electronic substrate (11). 7. The laminated composite (10) as claimed in claim 1, characterized in that the at least one electronic substrate (11) is a circuit carrier. 8. A circuit arrangement containing a laminated composite (10) as claimed in claim 1. 9. The laminated composite (10) as claimed in claim 1, characterized in that the at least one electronic substrate (11) is a direct bonded copper (DBC) substrate, an low-temperature co-fired ceramic (LTCC) substrate, a leadframe, a printed circuit board, a power semiconductor or integrated circuit (IC), or a carrier substrate or a heat sink. 10. A laminated composite (10) comprising at least one electronic substrate (11) and a layer arrangement (20, 30) including at least a first layer of at least one of a first metal and a first metal alloy and including a second layer, adjoining said first layer, of at least one of a second metal and a second metal alloy, wherein melting temperatures of the first layer and of the second layer are different, further comprising a region with at least one intermetallic phase (40),wherein one of the first layer and the second layer is formed by a reaction solder which consists of a mixture of a base solder with an AgX, CuX or NiX alloy, wherein the component X in the AgX, CuX or NiX alloy is selected from the group consisting of B, Mg, Al, Si, Ca, Se, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Y, Zr, Nb, Mo, Ag, In, Sn, Sb, Ba, Hf, Ta, W, Au, Bi, La, Ce, Pr, Nd, Gd, Dy, Sm, Er, Tb, Eu, Ho, Tm, Yb and Lu,wherein the melting temperature of the AgX, CuX or NiX alloy is higher than the melting temperature of the base solder,wherein the other of the first layer and the second layer, which is not formed by a reaction solder, is an Ag-sintered layer,wherein the AgX, CuX or NiX alloy does not have the same composition as the base solder;wherein the Ag, Cu or Ni content of the layer formed by the reaction solder is between 20% by weight and 80% by weight;wherein the region of the intermetallic phase (40) encompasses the first layer (20) or second layer (30); andwherein the AgX, CuX or NiX alloy is present in a mean particle size of between 1 nm and 50 μm in the mixture with the base solder. 11. A laminated composite (10) comprising at least one electronic substrate (11) and a layer arrangement (20, 30) including at least a first layer of at least one of a first metal and a first metal alloy and including a second layer, adjoining said first layer, of at least one of a second metal and a second metal alloy, wherein melting temperatures of the first layer and of the second layer are different, further comprising a region with at least one intermetallic phase (40),wherein one of the first layer and the second layer is formed by a reaction solder which consists of a mixture of a base solder with an AgX, CuX or NiX alloy, wherein the component X in the AgX, CuX or NiX alloy is selected from the group consisting of B, Mg, Al, Si, Ca, Se, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Y, Zr, Nb, Mo, Ag, In, Sn, Sb, Ba, Hf, Ta, W, Au, Bi, La, Ce, Pr, Nd, Gd, Dy, Sm, Er, Tb, Eu, Ho, Tm, Yb and Lu,wherein the melting temperature of the AgX, CuX or NiX alloy is higher than the melting temperature of the base solder,wherein the other of the first layer and the second layer, which is not formed by a reaction solder, is an Ag-sintered layer,wherein the AgX, CuX or NiX alloy does not have the same composition as the base solder;wherein the Ag, Cu or Ni content of the layer formed by the reaction solder is between 20% by weight and 80% by weight;wherein the region of the intermetallic phase (40) partially replaces at least one of the first layer (20) and the second layer (30); andwherein the AgX, CuX or NiX alloy is present in a mean particle size of between 1 nm and 50 μm in the mixture with the base solder. 12. A method for forming a laminated composite (10) as claimed in claim 1, comprising the following steps: forming a raw laminated composite (10a) containing a layer arrangement (20, 30) and at least one electronic substrate (11), wherein the layer arrangement (20, 30) contains at least a first layer (20) of at least one of a first metal and a first metal alloy and a second layer (30), adjoining said first layer, of at least one of a second metal and a second metal alloy, wherein the melting temperatures of the first layer (20) and of the second layer (30) are different, wherein the first layer (20) or the second layer (30) is formed by a reaction solder which consists of a mixture of a base solder with an AgX, CuX or NiX alloy, and wherein the melting temperature of the AgX, CuX or NiX alloy is higher than the melting temperature of the base solder,subjecting the layer arrangement (20, 30) or the raw laminated composite (10a) to thermal treatment, as a result of which interdiffusion of at least one of the metals and the metal alloys in at least one of the first layer (20) and the second layer (30) takes place, andforming the laminated composite (10) containing at least one region of an intermetallic phase (40) between the first layer and the second layer. 13. The method as claimed in claim 12, characterized in that the thermal treatment is carried out at a temperature above the melting temperature of the base solder in the reaction solder. 14. A laminated composite (10) comprising at least one electronic substrate (11) and a layer arrangement (20, 30) including at least a first layer of at least one of a first metal and a first metal alloy and a region with at least one intermetallic phase (40), wherein the region with at least one intermetallic phase is formed from said first layer and a second layer, of at least one of a second metal and a second metal alloy, wherein melting temperatures of the first layer and of the second layer are different,wherein one of the first layer and the second layer is formed by a reaction solder which consists of a mixture of a base solder with an AgX, CuX or NiX alloy, wherein the component X in the AgX, CuX or NiX alloy is selected from the group consisting of B, Mg, Al, Si, Ca, Se, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Y, Zr, Nb, Mo, Ag, In, Sn, Sb, Ba, Hf, Ta, W, Au, Bi, La, Ce, Pr, Nd, Gd, Dy, Sm, Er, Tb, Eu, Ho, Tm, Yb and Lu,wherein the melting temperature of the AgX, CuX or NiX alloy is higher than the melting temperature of the base solder,wherein the other of the first layer and the second layer, which is not formed by a reaction solder, is an Ag-sintered layer,wherein the AgX, CuX or NiX alloy does not have the same composition as the base solder;wherein the Ag, Cu or Ni content of the layer formed by the reaction solder is between 20% by weight and 80% by weight; andwherein the AgX, CuX or NiX alloy is present in a mean particle size of between 1 nm and 50 μm in the mixture with the base solder.
연구과제 타임라인
LOADING...
LOADING...
LOADING...
LOADING...
LOADING...
이 특허에 인용된 특허 (3)
Shohji, Ikuo, Lead-free solder powder material, lead-free solder paste and a method for preparing same.
Melton Cynthia M. (Bolingbrook IL) Skipor Andrew (Glendale Heights IL) Beckenbaugh William M. (Barrington IL), Low temperature-wetting tin-base solder paste.
Mullen ; III William B. (Boca Raton FL) Banerji Kingshuk (Plantation FL) Bradley ; III Edwin L. (Sunrise FL) Kazem-Goudarzi Vahid (Sunrise FL), Multiple alloy solder preform.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.