Package structure and method for forming the same
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-023/00
H01L-023/31
H01L-023/528
H01L-023/532
H01L-021/56
H01L-021/768
H01L-021/3205
H01L-021/02
출원번호
US-0971132
(2015-12-16)
등록번호
US-9633924
(2017-04-25)
발명자
/ 주소
Yu, Chen-Hua
Lin, Jing-Cheng
Fu, Tsei-Chung
출원인 / 주소
Taiwan Semiconductor Manufacturing Company, Ltd.
대리인 / 주소
Slater Matsil, LLP
인용정보
피인용 횟수 :
0인용 특허 :
3
초록▼
A package structure and method for forming the same are provided. The package structure includes a substrate and a semiconductor die formed over the substrate. The package structure also includes a package layer covering the semiconductor die and a conductive structure formed in the package layer. T
A package structure and method for forming the same are provided. The package structure includes a substrate and a semiconductor die formed over the substrate. The package structure also includes a package layer covering the semiconductor die and a conductive structure formed in the package layer. The package structure includes a first insulating layer formed on the conductive structure, and the first insulating layer includes monovalent metal oxide. A second insulating layer is formed between the first insulating layer and the package layer. The second insulating layer includes monovalent metal oxide, and a weight ratio of the monovalent metal oxide in the second insulating layer is greater than a weight ratio of the monovalent metal oxide in first insulating layer.
대표청구항▼
1. A package structure, comprising: a substrate;a semiconductor die formed over the substrate;a package layer adjacent to the semiconductor die;a conductive structure formed in the package layer;a first insulating layer formed on the conductive structure, wherein the first insulating layer comprises
1. A package structure, comprising: a substrate;a semiconductor die formed over the substrate;a package layer adjacent to the semiconductor die;a conductive structure formed in the package layer;a first insulating layer formed on the conductive structure, wherein the first insulating layer comprises monovalent metal oxide; anda second insulating layer formed between the first insulating layer and the package layer, wherein the second insulating layer comprises the monovalent metal oxide, and wherein a weight ratio of the monovalent metal oxide in the second insulating layer is greater than a weight ratio of the monovalent metal oxide in the first insulating layer. 2. The package structure as claimed in claim 1, wherein the conductive structure comprises a metal material, and the monovalent metal oxide comprises a metal element that is the same as that of the metal material. 3. The package structure as claimed in claim 1, wherein the first insulating layer further comprises divalent metal oxide, the second insulating layer further comprises divalent metal oxide, and a weight ratio of the divalent metal oxide in the second insulating layer is smaller than a weight ratio of the divalent metal oxide in the first insulating layer. 4. The package structure as claimed in claim 3, wherein the monovalent metal oxide is cuprous oxide (Cu2O), and the divalent metal oxide is cupric oxide (CuO). 5. The package structure as claimed in claim 1, wherein the weight ratio of the monovalent metal oxide in the second insulating layer is in a range from about 30 wt % to about 60 wt %. 6. The package structure as claimed in claim 1, wherein a surface roughness of the second insulating layer is greater than a surface roughness of the first insulating layer. 7. The package structure as claimed in claim 1, wherein the second insulating layer is in contact with the package layer. 8. The package structure as claimed in claim 1, further comprising: a redistribution layer formed over the package layer, wherein the redistribution layer is electrically connected to the semiconductor die. 9. The package structure as claimed in claim 1, wherein the first insulating layer is a native oxide layer. 10. A package structure, comprising: a substrate;a semiconductor die formed over the substrate;a package layer adjacent to the semiconductor die;a conductive structure formed in the package layer; andan insulating layer formed on the conductive structure, wherein the insulating layer comprises more monovalent metal oxide at a first location near an outside surface of the insulating layer than at a second location near an inner surface which is in contact with the conductive structure. 11. The package structure as claimed in claim 10, wherein the conductive structure comprises a metal material, and the monovalent metal oxide comprises a metal element that is the same as that of the metal material. 12. The package structure as claimed in claim 10, wherein a weight ratio of the monovalent metal oxide near the outside surface of the insulating layer is about 1.5 to about 3 times greater than a weight ratio of the monovalent metal oxide near the inner surface of the insulating layer. 13. The package structure as claimed in claim 10, further comprising: a redistribution layer formed over the package layer, wherein the redistribution layer is electrically connected to the semiconductor die. 14. A package structure comprising: a bottom package comprising: a semiconductor die in a package layer;a conductive structure in the package layer, the conductive structure laterally spaced from the semiconductor die;a first insulating layer on sidewalls of the conductive structure, the first insulating layer comprising monovalent metal oxide; anda second insulating layer lining the first insulating layer, the second insulating layer comprising the monovalent metal oxide;wherein a weight ratio of the monovalent metal oxide in the first insulating layer is less than a weight ratio of the monovalent metal oxide in the second insulating layer. 15. The package structure as claimed in claim 14, further comprising a redistribution structure underlying the package layer. 16. The package structure as claimed in claim 15, further comprising a base layer overlying the package layer. 17. The package structure as claimed in claim 16, further comprising a top package connected to the bottom package by electrical connectors formed in the base layer. 18. The package structure as claimed in claim 14, wherein the conductive structure is an InFO via (TIV). 19. The package structure as claimed in claim 14, wherein the conductive structure comprises a metal material, and wherein the first insulating layer and the second insulating layer comprise the metal material. 20. The package structure as claimed in claim 14, wherein a surface roughness of the second insulating layer is greater than a surface roughness of the first insulating layer.
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