[미국특허]
Pane with electrical connection element and connection bridge
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H05K-001/09
H05B-003/84
H01Q-001/12
H05K-001/03
H05K-001/11
출원번호
US-0439852
(2013-07-16)
등록번호
US-9635758
(2017-04-25)
우선권정보
EP-12193522 (2012-11-21)
국제출원번호
PCT/EP2013/064987
(2013-07-16)
국제공개번호
WO2014/079594
(2014-05-30)
발명자
/ 주소
Schmalbuch, Klaus
Reul, Bernhard
Rateiczak, Mitja
Lesmeister, Lothar
출원인 / 주소
SAINT-GOBAIN GLASS FRANCE
대리인 / 주소
Steinfl + Bruno LLP
인용정보
피인용 횟수 :
0인용 특허 :
12
초록▼
A disk with at least one connecting element having a connecting bridge, including; a substrate having an electrically conductive structure on at least one partial region of the substrate, at least one electric connecting element on at least one partial region of the electrically conductive structure
A disk with at least one connecting element having a connecting bridge, including; a substrate having an electrically conductive structure on at least one partial region of the substrate, at least one electric connecting element on at least one partial region of the electrically conductive structure, a connecting bridge on at least one partial region of the connecting element and a lead-free solder mass that connects the electric connecting element in at least one partial region with the electrically conductive structure, wherein the difference of the thermal expansion coefficient of the substrate and the connecting element is less than 5×10−6/° C., wherein the connecting bridge is formed in a massive manner and contains copper and wherein the material compositions of the connecting element and the connecting bridge differ.
대표청구항▼
1. A pane with at least one electrical connection element with a connection bridge, comprising at least: a substrate with an electrically conductive structure on at least one subregion of the substrate, at least one electrical connection element on at least one subregion of the electrically conducti
1. A pane with at least one electrical connection element with a connection bridge, comprising at least: a substrate with an electrically conductive structure on at least one subregion of the substrate, at least one electrical connection element on at least one subregion of the electrically conductive structure, a connection bridge on at least one subregion of the connection element, wherein the connection element contains at least 66.5 wt.-% to 89.5 wt.-% iron, 10.5 wt.-% to 20 wt.-% chromium, and one or more selected from the group of carbon, nickel, manganese, molybdenum, niobium, and titanium, and a leadfree solder material, which connects the electrical connection element to the electrically conductive structure in at least one subregion, wherein the difference between the coefficients of thermal expansion of the substrate and the connection element is less than 5×10−6/° C., wherein the connection bridge is implemented as a solid and contains copper, and wherein the material compositions of the connection element and the connection bridge are different. 2. The pane according to claim 1, wherein the connection element contains at least 77 wt.-% to 84 wt.-% iron, and 16 wt.-% to 18.5 wt.-% chromium. 3. A method for producing the pane according to claim 1, comprising: electrically conductively affixing a connection bridge on the top of the connection element,applying a leadfree solder material on at least one contact surface on the bottom of a connection element,arranging the connection element with the leadfree solder material on an electrically conductive structure on a substrate, andsoldering the connection element to the electrically conductive structure. 4. The method according to claim 3, further comprising subsequently plastically reshaping the connection bridge by one-sided loading on the end of the connection bridge. 5. Use of a pane according to claim 1 as a pane with electrically conductive structures. 6. The pane according to claim 1, wherein the connection bridge contains 58 wt.-% to 99.9 wt.-% copper. 7. The pane according to claim 1, wherein the connection bridge contains 60 wt.-% to 80 wt.-% copper and 20 wt.-% to 40 wt.-% zinc. 8. The pane according to claim 1, wherein an electrical resistance of the connection bridge is between 0.5 μOhm·cm and 20 μOhm·cm. 9. The pane according to claim 1, wherein an electrical resistance of the connection bridge is between 1.0 μOhm·cm and 15 μOhm·cm. 10. The pane according to claim 1, wherein an electrical resistance of the connection bridge is between 1.5 μOhm·cm and 11 μOhm·cm. 11. The pane according to claim 1, wherein the connection element contains at least one of: titanium, iron, nickel, cobalt, molybdenum, copper, zinc, tin, manganese, niobium, chromium, and alloys thereof. 12. The pane according to claim 1, wherein the connection element contains iron alloys. 13. The pane according to claim 1, wherein the connection bridge contains at least one of: titanium, iron, nickel, cobalt, molybdenum, zinc, tin, manganese, niobium, silicon, chromium, and alloys thereof. 14. The pane according to claim 1, wherein the electrically conductive structure contains silver and has a layer thickness of 5 μm to 40 μm. 15. The pane according to claim 1, wherein the electrically conductive structure contains silver particles and glass frits. 16. The pane according to claim 1, wherein the substrate contains glass. 17. The pane according to claim 1, wherein the substrate contains at least one of: flat glass, float glass, quartz glass, borosilicate glass, and soda lime glass. 18. The pane according to claim 1, wherein the leadfree solder material contains at least one of: tin, bismuth, indium, zinc, copper, silver, and alloys thereof. 19. The pane according to claim 1, wherein the leadfree solder material contains 35 wt.-% to 69 wt.-% bismuth, 30 wt.-% to 50 wt.-% tin and 1 wt.-% to 10 wt.-% silver.
Aoude Farid Y. (Wappingers NY) Cooper Emanuel I. (Riverdale NY) Duncombe Peter R. (Peekskill NY) Farooq Shaji (Hopewell Junction NY) Giess Edward A. (Purdys Station NY) Kim Young-Ho (Seoul NY KRX) Kn, Via paste compositions and use thereof to form conductive vias in circuitized ceramic substrates.
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