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Kafe 바로가기국가/구분 | United States(US) Patent 등록 |
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국제특허분류(IPC7판) |
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출원번호 | US-0827177 (2015-08-14) |
등록번호 | US-9647114 (2017-05-09) |
발명자 / 주소 |
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출원인 / 주소 |
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대리인 / 주소 |
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인용정보 | 피인용 횟수 : 21 인용 특허 : 654 |
Methods of forming p-type doped germanium-tin layers, systems for forming the p-type doped germanium-tin layers, and structures including the p-type doped germanium-tin layers are disclosed. The p-type doped germanium-tin layers include an n-type dopant, which allows relatively high levels of tin an
Methods of forming p-type doped germanium-tin layers, systems for forming the p-type doped germanium-tin layers, and structures including the p-type doped germanium-tin layers are disclosed. The p-type doped germanium-tin layers include an n-type dopant, which allows relatively high levels of tin and/or p-type dopant to be included into the p-type doped germanium-tin layers.
1. A method of forming a p-type doped germanium-tin layer, the method comprising the steps of: providing a substrate within a reaction chamber of a reactor;providing one or more precursors to the reaction chamber; andforming a p-typed doped germanium-tin layer on a surface of a substrate within the
1. A method of forming a p-type doped germanium-tin layer, the method comprising the steps of: providing a substrate within a reaction chamber of a reactor;providing one or more precursors to the reaction chamber; andforming a p-typed doped germanium-tin layer on a surface of a substrate within the reaction chamber,wherein the p-type doped germanium-tin layer comprises about 1×1018 cm−3 to about 1×1020 cm−3 p-type dopant comprising a group 13 element, andwherein the p-type doped germanium-tin layer comprises about 1×1017 cm−3 to about 5×1017 cm−3 n-type dopant comprising a group 15 element. 2. The method of claim 1, further comprising a step of mixing a p-type dopant precursor and an n-type dopant precursor at an inlet of the reaction chamber. 3. The method of claim 1, wherein the step of providing one or more precursors to the reaction chamber comprises: providing a germanium precursor to the reaction chamber;providing a tin precursor to the reaction chamber;providing a p-type dopant precursor to the reaction chamber; andproviding an n-type dopant precursor to the reaction chamber. 4. The method of claim 3, further comprising a step of providing a silicon precursor to the reaction chamber. 5. The method of claim 4, wherein the p-type doped germanium-tin layer comprises silicon. 6. The method of claim 1, wherein a ratio of a flowrate of a p-type dopant precursor to a flowrate of an n-type dopant precursor during growth of the p-type doped germanium-tin layer ranges from about 100 to about 1. 7. The method of claim 1, wherein a ratio of a flowrate of a p-type dopant precursor and a flowrate of a tin precursor ranges from about 3 to about 1. 8. The method of claim 1, wherein the step of providing one or more precursors to the reaction chamber comprises providing a carbon precursor to the reaction chamber. 9. The method of claim 1, wherein the p-type doped germanium-tin layer further comprises carbon. 10. The method of claim 1, wherein the p-type doped germanium-tin layer comprises greater than five atomic percent tin. 11. The method of claim 1, wherein the p-type doped germanium-tin layer comprises about one to about fifteen atomic percent tin.
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