Beam extraction slit structure and ion source
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01J-037/317
H01J-037/08
출원번호
US-0885586
(2015-10-16)
등록번호
US-9659749
(2017-05-23)
우선권정보
JP-2014-212773 (2014-10-17)
발명자
/ 주소
Sato, Masateru
출원인 / 주소
SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.
대리인 / 주소
Michael Best & Friedrich LLP
인용정보
피인용 횟수 :
0인용 특허 :
5
초록▼
A beam extraction slit structure includes a plasma chamber interior surface that is, in operation, in contact with a plasma; a plasma chamber exterior surface that faces an extraction electrode; and a slit surface part that forms a beam extraction slit between the plasma chamber interior surface and
A beam extraction slit structure includes a plasma chamber interior surface that is, in operation, in contact with a plasma; a plasma chamber exterior surface that faces an extraction electrode; and a slit surface part that forms a beam extraction slit between the plasma chamber interior surface and the plasma chamber exterior surface in the beam extraction direction. The slit surface part includes a plasma meniscus fixing part formed in an area of relatively higher plasma density in the slit longitudinal direction to fixingly maintain a plasma meniscus of the plasma and a plasma meniscus non-fixing part formed in an area of relatively lower plasma density in the slit longitudinal direction to movably maintain the plasma meniscus of the plasma in the beam extraction direction.
대표청구항▼
1. A beam extraction slit structure of an ion source plasma chamber adjacent to an extraction electrode, the extraction electrode positioned across a gap from an elongated slit of the beam extraction slit structure in a beam extraction direction, the elongated slit arranged along a slit longitudinal
1. A beam extraction slit structure of an ion source plasma chamber adjacent to an extraction electrode, the extraction electrode positioned across a gap from an elongated slit of the beam extraction slit structure in a beam extraction direction, the elongated slit arranged along a slit longitudinal direction perpendicular to the beam extraction direction, the beam extraction slit structure comprising: a plasma chamber interior surface that is, in operation, in contact with a plasma;a plasma chamber exterior surface that faces the extraction electrode; andan elongated slit surface that extends from the interior surface to the exterior surface in the beam extraction direction to define the elongated slit, the elongated slit surface including a plasma meniscus fixing part formed in a center of the elongated slit in the slit longitudinal direction to fixingly maintain a plasma meniscus of the plasma and a plasma meniscus non-fixing part formed in an end of the elongated slit in the slit longitudinal direction to movably maintain the plasma meniscus of the plasma in the beam extraction direction. 2. The beam extraction slit structure according to claim 1, wherein the plasma meniscus fixing part comprises a ridge that extends in the slit longitudinal direction, wherein the plasma meniscus non-fixing part comprises a plateau wider in the beam extraction direction than the ridge. 3. The beam extraction slit structure according to claim 1, wherein the plasma meniscus fixing part comprises an edge part that projects in a width direction of the elongated slit perpendicular to the slit longitudinal direction and the beam extraction direction in a cross section perpendicular to the slit longitudinal direction, wherein the plasma meniscus non-fixing part comprises a flat part that extends in the beam extraction direction in a cross section perpendicular to the slit longitudinal direction. 4. The beam extraction slit structure according to claim 1, wherein the plasma meniscus fixing part comprises a single ridge line part that fixingly maintains the plasma meniscus, wherein the plasma meniscus non-fixing part comprises two ridge line parts that define a wedge-shaped area that movably maintains the plasma meniscus in the beam extraction direction,wherein the two ridge line parts are branched from the single ridge line part at an intermediate position of the elongated slit between the center of the elongated slit and the end of the elongated slit in the slit longitudinal direction,wherein a width of the wedge-shaped area in the beam extraction direction is progressively larger toward the end of the elongated slit from a branch point of the two ridge line parts. 5. The beam extraction slit structure according to claim 1, wherein the elongated slit comprises a slit entrance formed toward the plasma and having a first profile line, and a slit exit formed toward the extraction electrode and having a second profile line, wherein the second profile line is overlapped with the first profile line in the center of the elongated slit in the slit longitudinal direction and is separate from the first profile line in the end of the elongated slit in the slit longitudinal direction. 6. The beam extraction slit structure according to claim 5, wherein the second profile line is located on a surface of a second elliptical column extending in a width direction of the elongated slit, wherein the first profile line is located on a surface of a first elliptical column extending in the width direction of the elongated slit and encompassing the second elliptical column,wherein the second elliptical column is slightly across or in contact with the first elliptical column at the center of the elongated slit. 7. The beam extraction slit structure according to claim 5, wherein the second profile is located on a surface of an elliptical column extending in a width direction of the elongated slit, wherein the first profile line is located on a plane parallel to the width direction and longitudinal direction of the elongated slit,wherein the elliptical column is slightly across or in contact with the plane at the center of the elongated slit. 8. The beam extraction slit structure according to claim 1, wherein the plasma meniscus fixing part comprises a slope surface having an aperture angle selected from a range between 60° and 120°, the slope surface provided toward the plasma chamber interior surface. 9. The beam extraction slit structure according to claim 1, wherein the plasma meniscus non-fixing part comprises a surface having an aperture angle selected from a range between 0° and 20° toward the plasma chamber interior surface. 10. An ion source provided with the beam extraction slit structure according to claim 1, wherein the ion source plasma chamber is an arc chamber elongated in the slit longitudinal direction as viewed in the beam extraction direction, wherein the ion source further includes:a thermionic emission unit that emits thermoelectrons in the arc chamber; anda magnetic field generator that applies a magnetic field parallel with the slit longitudinal direction in the arc chamber. 11. A beam extraction slit structure of an ion source plasma chamber adjacent to an extraction electrode, the extraction electrode positioned across a gap from an elongated slit of the beam extraction slit structure in a beam extraction direction, the elongated slit arranged along a slit longitudinal direction perpendicular to the beam extraction direction, the beam extraction slit structure comprising: a plasma chamber interior surface that is, in operation, in contact with a plasma;a plasma chamber exterior surface that faces the extraction electrode; andan elongated slit surface that extends from the interior surface to the exterior surface in the beam extraction direction to define the elongated slit, the elongated slit surface including a plasma meniscus fixing part formed in an area of relatively higher plasma density in the slit longitudinal direction to fixingly maintain a plasma meniscus of the plasma and a plasma meniscus non-fixing part formed in an area of relatively lower plasma density in the slit longitudinal direction to movably maintain the plasma meniscus of the plasma in the beam extraction direction.
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이 특허에 인용된 특허 (5)
Aitken Derek (East Molesey GB2), Apparatus and methods for ion implantation.
Kwon,Ui hui; Keum,Gyeong su; Chung,Won young; Cha,Kwang ho; Kim,Young tae; Chae,Seung ki; Won,Jai hyung; Park,Young kwan; Kim,Tai kyung, Ion implanters having an arc chamber that affects ion current density.
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