Non-contaminating bonding material for segmented silicon carbide liner in a fluidized bed reactor
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
B01J-019/02
B01J-008/18
B01J-008/24
C01B-037/00
C23C-016/442
B01J-002/16
C23C-016/44
C23C-016/24
B32B-001/08
C01B-033/021
C04B-035/565
C04B-037/00
F27B-015/06
F27D-001/00
F27D-001/04
B01J-002/00
출원번호
US-0461307
(2014-08-15)
등록번호
US-9662628
(2017-05-30)
발명자
/ 주소
Yilmaz, Sefa
Miller, Matthew J.
Spangler, Michael V.
Wemp, Barry
Julsrud, Stein
출원인 / 주소
REC SILICON INC
대리인 / 주소
Klarquist Sparkman, LLP
인용정보
피인용 횟수 :
0인용 특허 :
14
초록▼
Segmented silicon carbide liners for use in a fluidized bed reactor for production of polysilicon-coated granulate material are disclosed, as well as methods of making and using the segmented silicon carbide liners. Non-contaminating bonding materials for joining silicon carbide segments also are di
Segmented silicon carbide liners for use in a fluidized bed reactor for production of polysilicon-coated granulate material are disclosed, as well as methods of making and using the segmented silicon carbide liners. Non-contaminating bonding materials for joining silicon carbide segments also are disclosed. One or more of the silicon carbide segments may be constructed of reaction-bonded silicon carbide.
대표청구항▼
1. A process for constructing a silicon carbide liner for a fluidized bed reactor for production of polysilicon-coated granulate material, comprising: forming at least one coated edge surface by applying a bonding material comprising a lithium salt to at least a portion of an edge surface of a first
1. A process for constructing a silicon carbide liner for a fluidized bed reactor for production of polysilicon-coated granulate material, comprising: forming at least one coated edge surface by applying a bonding material comprising a lithium salt to at least a portion of an edge surface of a first silicon carbide segment;bringing the at least a portion of the edge surface of the first silicon carbide segment into abutment with at least a portion of an edge surface of a second silicon carbide segment with at least a portion of the bonding material positioned between the abutting edge surfaces of the first silicon carbide segment and the second silicon carbide segment; andapplying heat to the bonding material, in an atmosphere devoid of hydrocarbons, to cure the bonding material and form bonded first and second silicon carbide segments, wherein the bonding material after curing comprises 0.4-0.7 wt % lithium as lithium aluminum silicate and silicon carbide. 2. The process of claim 1, wherein the silicon carbide is reaction-bonded silicon carbide that has a surface contamination level of less than 1% atomic of phosphorus and less than 1% atomic of boron, and has a mobile metal concentration sufficiently low to provide a metal partial pressure less than 0.1 Pa in the fluidized bed reactor for each mobile metal within the operating temperature range of the polysilicon fluidized bed reactor. 3. The process of claim 2, wherein the mobile metal concentration is the concentration of aluminum, chromium, iron, copper, magnesium, calcium, sodium, nickel, tin, zinc, and molybdenum. 4. The process of claim 1, wherein the bonding material has a viscosity from 3.5 Pa·s to 21 Pa·s at 20° C. 5. The process of claim 1, wherein the bonding material is an aqueous slurry comprising 2500-5000 ppm lithium as lithium silicate and silicon carbide particles. 6. The process of claim 5, wherein the bonding material further comprises aluminum silicate. 7. The process of claim 1, wherein applying heat comprises: exposing the abutted first and second silicon carbide segments to an atmosphere at a first temperature T1 for a first period of time;increasing the temperature to a temperature T2, andexposing the abutted first and second silicon carbide segments to the second temperature T2, wherein T2>T1, for a second period of time to cure the bonding material. 8. The process of claim 7, wherein: the first temperature T1 is 90-110° C. and the first period of time is at least two hours; andthe second temperature T2 is 250-350° C. and the second period of time is at least two hours. 9. The process of claim 1, further comprising allowing the abutted first and second silicon carbide segments to dry for an initial period of time at ambient temperature in air before applying heat. 10. The process of claim 9, wherein the initial period of time is at least one hour. 11. A silicon carbide liner for use in a fluidized bed reactor for production of polysilicon-coated granulate material, the liner comprising: a first silicon carbide segment;a second silicon carbide segment abutted to the first silicon carbide segment; anda bonding material positioned between abutting edge surfaces of the first and second silicon carbide segments, the bonding material comprising 0.4-0.7 wt % lithium as lithium aluminum silicate and silicon carbide. 12. The silicon carbide liner of claim 11, wherein the bonding material comprises 93-97 wt % silicon carbide. 13. The silicon carbide liner of claim 11, wherein the silicon carbide is reaction-bonded silicon carbide that has a surface contamination level of less than 1% atomic of phosphorus and less than 1% atomic of boron, and has a mobile metal concentration sufficiently low to provide a mobile metal partial pressure less than 1×10−6 atmospheres at an operating temperature range of the fluidized bed reactor. 14. The silicon carbide liner of claim 11, wherein the bonding material further comprises aluminum silicate. 15. The silicon carbide liner of claim 14, wherein: one of an edge surface of the first silicon carbide segment and an adjacent edge surface of the second silicon carbide segment defines a female joint portion; andthe other of the edge surface of the first silicon carbide segment and the adjacent edge surface of the second silicon carbide segment defines a male joint portion cooperatively dimensioned to fit with the female joint portion. 16. A fluidized bed reactor for production of polysilicon-coated granulate material, comprising: a vessel having an outer wall; anda silicon carbide liner as defined in claim 11, the liner positioned inwardly of the outer wall such that the inwardly facing surface of the liner defines a portion of a reaction chamber. 17. The fluidized bed reactor of claim 16, further comprising: at least one heater positioned between the outer wall and the segmented silicon carbide liner;at least one inlet having an opening positioned to admit a primary gas comprising a silicon-bearing gas into the reaction chamber;a plurality of fluidization gas inlets, wherein each fluidization gas inlet has an outlet opening into the reaction chamber; andat least one outlet for removing polysilicon-coated granulate material from the vessel. 18. The fluidized bed reactor of claim 17, wherein the silicon carbide is reaction-bonded silicon carbide that is substantially devoid of boron and phosphorus, and has a mobile metal concentration sufficiently low to provide a mobile metal partial pressure less than 1×10−6 atmospheres at an operating temperature range of the polysilicon fluidized bed reactor. 19. A process for the production of polysilicon-coated granulate particles, the process comprising flowing a silicon-containing gas through a fluidized bed reactor containing a seed particle within a reactor chamber defined by the fluidized bed reactor to effect pyrolysis of the silicon-containing gas and deposition of a polycrystalline silicon layer on the seed particle to form a polysilicon-coated particle, wherein the fluidized bed reactor comprises a silicon carbide liner as defined in claim 11, the liner being positioned inwardly of the outer wall such that the inwardly facing surface of the liner defines a portion of a reaction chamber. 20. The process of claim 19, wherein the seed particle comprises silicon.
연구과제 타임라인
LOADING...
LOADING...
LOADING...
LOADING...
LOADING...
이 특허에 인용된 특허 (14)
Ingle William M. (Phoenix AZ) Darnell Robert D. (Phoenix AZ) Thompson Stephen W. (Rosenberg TX), Ascending differential silicon harvesting means and method.
Hsu George C. (La Crescenta CA) Levin Harry (Woodland Hills CA) Hogle Richard A. (Arcadia CA) Praturi Ananda (Monrovia CA) Lutwack Ralph (Sunland CA), Fluidized bed silicon deposition from silane.
Chaumat, Valérie; Henne, Jean-François, Method for assembling, joining parts made of SiC-based materials by non-reactive brazing, brazing compositions, and joint and assembly obtained by said method.
Chaumat, Valérie; Henne, Jean-Francois; Miloud-Ali, Nadia, Method for joining, assembling parts made of SiC-based materials by non-reactive brazing, brazing compositions, and joint and assembly obtained by said method.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.