초록 ▼

A binary image sensor includes a plurality of unit pixels on a substrate having a surface on which light is incident. At least one quantum dot is disposed on the surface of a substrate. A column sense amplifier circuit is configured to detect binary information of a selected unit pixel among the plu

A binary image sensor includes a plurality of unit pixels on a substrate having a surface on which light is incident. At least one quantum dot is disposed on the surface of a substrate. A column sense amplifier circuit is configured to detect binary information of a selected unit pixel among the plurality of unit pixels from a voltage or a current detected from the selected unit pixel, and a processing unit is configured to process binary information of the respective unit pixels to generate pixel image information. Related devices and methods of operation are also discussed.

대표청구항 ▼

1. A unit pixel of a binary image sensor, comprising: a substrate having a surface on which light is incident;at least one quantum dot on the surface of the substrate;source and drain areas in the substrate;a channel area between the source and drain areas;a gate electrode on the channel area; anda

1. A unit pixel of a binary image sensor, comprising: a substrate having a surface on which light is incident;at least one quantum dot on the surface of the substrate;source and drain areas in the substrate;a channel area between the source and drain areas;a gate electrode on the channel area; anda charge storage area between the channel area and the at least one quantum dot and configured to store carriers transferred from the at least one quantum dot,wherein the at least one quantum dot and the gate electrode are on opposite sides of the channel area, wherein a conductivity type of the charge storage area is different from a conductivity type of the source and drain areas, wherein the substrate comprises a first area having a different conductivity type than the conductivity type of the source and drain areas, and wherein the charge storage area comprises an implanted region in the first area. 2. The unit pixel of claim 1, wherein when a gate voltage is applied to the gate electrode, carriers stored at the charge storage area lower an electrostatic potential of the channel area. 3. The unit pixel of claim 1, wherein the at least one quantum dot and the charge storage area are directly adjacent each other, wherein the unit pixel is configured to operate responsive to a different wavelength of visible light than an adjacent unit pixel of the binary image sensor based on absorption by the at least one quantum dot of the unit pixel. 4. The unit pixel of claim 3, wherein the at least one quantum dot comprises a metallic compound and/or a silicon compound. 5. The unit pixel of claim 4, wherein the metallic compound comprises copper, tungsten, and/or aluminum. 6. A binary image sensor comprising: a plurality of unit pixels on a substrate having a surface that is configured to receive incident light, the unit pixels respectively comprising:source and drain regions in the substrate and a channel region therebetween;a gate electrode on the channel region;at least one quantum dot on the surface of the substrate; anda charge storage region between the gate electrode and the at least one quantum dot,wherein the at least one quantum dot and the gate electrode are on opposite sides of the channel region, wherein a conductivity type of the charge storage region is different from a conductivity type of the source and drain regions, wherein the substrate comprises a first area having a different conductivity type than the conductivity type of the source and drain regions, and wherein the charge storage region comprises an implanted region in the first area. 7. The image sensor of claim 6, wherein the charge storage region is configured to store carriers therein that are generated by the quantum dot responsive to the incident light. 8. The image sensor of claim 7, wherein the channel region is configured such that an electrostatic potential thereof differs responsive to a quantity and/or type of the carriers stored in the charge storage region. 9. The image sensor of claim 8, wherein respective unit pixels of the unit pixels are configured to operate responsive to different respective wavelengths of visible light based on absorption thereof by the at least one quantum dot of the respective unit pixels, wherein the different wavelengths of visible light comprise respective wavelength ranges corresponding to respective colors of a visible spectrum, and wherein the respective unit pixels define a pixel of a pixel array. 10. The image sensor of claim 9, wherein, based on respective different materials of the at least one quantum dot thereof, the respective unit pixels are configured to indicate respective binary information corresponding to the respective colors, wherein the respective unit pixels are separated by an isolation layer therebetween, and wherein the image sensor is free of color filters.