Transient devices designed to undergo programmable transformations
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-029/66
H01L-031/08
H01L-029/786
B82Y-010/00
H01L-029/06
H01Q-001/22
H01Q-007/00
G11B-023/28
H01L-029/861
H01L-029/778
H01L-029/812
H01L-029/872
H01L-023/29
H01L-027/01
H01L-049/02
출원번호
US-0624096
(2012-09-21)
등록번호
US-9691873
(2017-06-27)
발명자
/ 주소
Rogers, John A.
Omenetto, Fiorenzo G.
Hwang, Suk-Won
Tao, Hu
Kim, Dae-Hyeong
Kaplan, David
출원인 / 주소
The Board of Trustees of the University of Illinois
대리인 / 주소
Lathrop & Gage LLP
인용정보
피인용 횟수 :
2인용 특허 :
167
초록▼
The invention provides transient devices, including active and passive devices that electrically and/or physically transform upon application of at least one internal and/or external stimulus. Materials, modeling tools, manufacturing approaches, device designs and system level examples of transient
The invention provides transient devices, including active and passive devices that electrically and/or physically transform upon application of at least one internal and/or external stimulus. Materials, modeling tools, manufacturing approaches, device designs and system level examples of transient electronics are provided.
대표청구항▼
1. An actively triggered transient electronic device comprising: a substrate;one or more inorganic components supported by said substrate; wherein said one or more inorganic components independently comprise a selectively transformable material, wherein said one or more inorganic components have a p
1. An actively triggered transient electronic device comprising: a substrate;one or more inorganic components supported by said substrate; wherein said one or more inorganic components independently comprise a selectively transformable material, wherein said one or more inorganic components have a preselected transience profile in response to an external or internal stimulus;a silk overcoat provided on at least a portion of said one or more inorganic components; andan actuator responsive to a user initiated external trigger signal and operably connected to said one or more inorganic components, wherein upon said device receiving said external trigger signal said actuator at least partially removes said silk overcoat so as to expose at least a portion of said one or more inorganic components to said external or internal stimulus, thereby providing a programmable transformation of the actively triggered transient electronic device in response to said external trigger signal, wherein said programmable transformation provides a change in function of the actively triggered transient electronic device from a first condition to a second condition. 2. The device of claim 1, wherein said user initiated external trigger signal is an electronic signal, an optical signal, a thermal signal, a magnetic signal, a mechanical signal, a chemical signal, an acoustic signal or an electrochemical signal. 3. The device of claim 1, wherein said actuator generates electromagnetic radiation, acoustic energy, an electric field, a magnetic field, heat, a RF signal, a voltage, a chemical change, or a biological change in response to said user initiated external trigger signal, thereby initiating said at least partial transformation. 4. The device of claim 1, wherein said actuator comprises a heater, a reservoir containing a chemical agent capable of causing a chemical change or a biological change, a source of electromagnetic radiation, a source of an electric field, a source of RF energy or a source of acoustic energy. 5. The device of claim 1, wherein said actuator comprises an encapsulating material at least partially encapsulating one or more of said inorganic components, wherein said encapsulating material comprises a selectively removable material that is at least partially removed upon said device receiving said external trigger signal to expose said one or more partially encapsulated inorganic components to said internal or external stimulus, thereby initiating said at least partial transformation. 6. The device of claim 1, wherein said programmable transformation of the actively triggered transient electronic device of said one or more inorganic components occurs: (i) by a phase change, wherein at least a portion of said one or more inorganic components undergoes at least partial sublimation or melting;(ii) via at least partial dissolution of said one or more inorganic components in a solvent;(iii) via at least partial hydrolysis of said one or more inorganic components;(iv) via at least partial etching or corrosion of said one or more inorganic components;(v) by a photochemical reaction wherein at least a portion of said one or more inorganic components absorbs electromagnetic radiation and undergoes an at least partial chemical or physical change;(vi) by an electrochemical reaction; or(vii) by a chemical or physical change wherein at least a portion of said one or more inorganic components is converted to an insulator;thereby providing said programmable transformation of the transient electronic device. 7. The device of claim 1, wherein said preselected transience profile is characterized by a transformation of 0.01% to 100% of said one or more inorganic components over a time interval selected from the range of 1 ms to 2 years, thereby providing said programmable transformation of the transient electronic device. 8. The device of claim 1, wherein said preselected transience profile is characterized by a decrease in electrical conductivity of said one or more inorganic components at a rate selected over the range of 1010 S·m−1 s−1 to 1 S·m−1 s−1. 9. The device of claim 1, wherein said external or internal stimulus comprises a change in biological environment, a change in temperature, a change in pressure, exposure to electromagnetic radiation, contact with a chemical agent, application of an electric field, application of a magnetic field, exposure to a solvent, change in pH of an external environment, change in salt concentration of an external environment, or application of an anodic voltage. 10. The device of claim 1, further comprising an encapsulating material at least partially encapsulating one or more of said inorganic components, wherein said encapsulating material comprises a selectively removable material that is at least partially removed to expose said inorganic components. 11. The device of claim 10, wherein said encapsulating material comprises a material selected from the group consisting of MgO, silk, collagen, gelatin, PLGA, polyvinylalcohol (PVA), PLA, SiO2, polyanhydrides (polyesters), polyhydroxyalkanoates (PHAs) and polyphosphates. 12. The device of claim 11, wherein said encapsulating material comprises a silk composite material. 13. The device of claim 1, wherein said one or more inorganic components each independently have a thickness less than or equal to 100 nm. 14. The device of claim 1, wherein said one or more inorganic components independently comprise one or more perforated structures. 15. The device of claim 1, wherein said one or more inorganic components independently comprise a polycrystalline semiconductor material, single crystalline semiconductor material or a doped polycrystalline. 16. The device of claim 1, wherein said one or more inorganic components independently comprise Si, Ga, GaAs, ZnO or any combination of these. 17. The device of claim 1, wherein said one or more inorganic components are selected from inorganic semiconductor components, metallic conductor components and combinations of inorganic semiconductor components and metallic conductor components. 18. The device of claim 17, comprising said inorganic semiconductor components comprising ZnO and said metallic conductor components comprising Mg, Fe, W or an alloy thereof. 19. The device of claim 1, wherein said substrate comprises silk. 20. The device of claim 10, wherein a time for a thickness of said selectively removable material to reach zero is given by: tc=4ρmM(H2O)kw0M(m)kh02Dtanhkh02D;where tc is the critical time, ρm is the mass density of the material, M(H2O) is the molar mass of water, M(m) is the molar mass of the material, h0 is the initial thickness of the material, D is the diffusivity of water, k is the reaction constant for the dissolution reaction, and w0 is the initial concentration of water; wherein k has a value selected from the range of 105 to 10−10 s−1. 21. The device of claim 17, wherein said one or more metallic conductor components independently comprise Mg, W, Fe, an alloy of Mg with one or more additional materials selected from the group consisting of Al, Ag, Ca, Li, Mn, Si, Sn, Y, Zn, and Zr, wherein said one or more additional materials of said alloy has a concentration equal to or less than 10% by weight or an alloy of Mg with one or more rare earth elements, wherein said one or more rare earth elements of said alloy has a concentration equal to or less than 10% by weight. 22. The device of claim 1, wherein said programmable transformation of the actively triggered transient electronic device occurs by a process other than bioresorption. 23. A method of using an actively triggered transient electronic device, said method comprising the steps of: providing the actively triggered transient electronic device comprising:a substrate;one or more inorganic components supported by said substrate; wherein said one or more inorganic components independently comprise a selectively transformable material, wherein said one or more inorganic components have a preselected transience profile in response to an external or internal stimulus;a silk overcoat provided on at least a portion of said one or more inorganic components; andan actuator responsive to a user initiated external trigger signal and operably connected to said one or more inorganic components, wherein upon said device receiving said external trigger signal said actuator at least partially removes said silk overcoat so as to expose at least a portion of said one or more inorganic components to said external or internal stimulus, thereby providing a programmable transformation of the actively triggered transient electronic device in response to said external trigger signal, wherein said programmable transformation provides a change of the function of the actively triggered transient electronic device from a first condition to a second condition corresponding to a second functionality different from a first functionality; andproviding said user initiated external trigger signal to said electronic device, wherein said actuator directly or indirectly initiates at least partial transformation of said one or more inorganic components, thereby providing said programmable transformation. 24. The method of claim 23, wherein said one or more inorganic components are selected from inorganic semiconductor components, metallic conductor components and combinations of inorganic semiconductor components and metallic conductor components. 25. The method of claim 23, wherein said programmable transformation of the actively triggered transient electronic device occurs by a process other than bioresorption. 26. An actively triggered transient electronic device comprising: a substrate;one or more inorganic components supported by said substrate; wherein said one or more inorganic components independently comprise a selectively transformable material, wherein said one or more inorganic components have a preselected transience profile in response to an external or internal stimulus;a silk overcoat provided on at least a portion of said one or more inorganic components; andan actuator responsive to a user initiated external trigger signal and operably connected to said one or more inorganic components, wherein upon said device receiving said external trigger signal said actuator at least partially removes said silk overcoat so as to expose at least a portion of said one or more inorganic components to said external or internal stimulus, thereby providing a programmable transformation of the actively triggered transient electronic device in response to said external trigger signal, wherein said programmable transformation provides a change in function of the actively triggered transient electronic device from a first condition to a second condition;an encapsulating material at least partially encapsulating one or more of said inorganic components, wherein said encapsulating material comprises a selectively removable material that is at least partially removed to expose said inorganic components;wherein a time for a thickness of said selectively removable material to reach zero is given by: tc=4ρmM(H2O)kw0M(m)kh02Dtanhkh02D;where tc is the critical time, ρm is the mass density of the material, M(H2O) is the molar mass of water, M(m) is the molar mass of the material, h0 is the initial thickness of the material, D is the diffusivity of water, k is the reaction constant for the dissolution reaction, and w0 is the initial concentration of water; wherein k has a value selected from the range of 105 to 10−10 s−1. 27. The device of claim 26, wherein said user initiated external trigger signal is an electronic signal, an optical signal, a thermal signal, a magnetic signal, a mechanical signal, a chemical signal, an acoustic signal or an electrochemical signal. 28. The device of claim 26, wherein said actuator generates electromagnetic radiation, acoustic energy, an electric field, a magnetic field, heat, a RF signal, a voltage, a chemical change, or a biological change in response to said user initiated external trigger signal, thereby initiating said at least partial transformation. 29. The device of claim 26, wherein said actuator comprises a heater, a reservoir containing a chemical agent capable of causing a chemical change or a biological change, a source of electromagnetic radiation, a source of an electric field, a source of RF energy or a source of acoustic energy. 30. The device of claim 26, wherein said actuator comprises an encapsulating material at least partially encapsulating one or more of said inorganic components, wherein said encapsulating material comprises a selectively removable material that is at least partially removed upon said device receiving said external trigger signal to expose said inorganic components to said internal or external stimulus, thereby initiating said at least partial transformation. 31. The device of claim 26 further comprising an encapsulating material at least partially encapsulating one or more of said inorganic components, wherein said encapsulating material comprises a selectively removable material that is at least partially removed to expose said inorganic components. 32. The device of claim 31, wherein said encapsulating material comprises a silk composite material. 33. The device of claim 26, wherein said one or more inorganic components each independently have a thickness less than or equal to 100 nm. 34. The device of claim 26, wherein said one or more inorganic components are selected from inorganic semiconductor components, metallic conductor components and combinations of inorganic semiconductor components and metallic conductor components.
연구과제 타임라인
LOADING...
LOADING...
LOADING...
LOADING...
LOADING...
이 특허에 인용된 특허 (167)
Akiyama, Masahiko, Active matrix substrate and method of manufacturing the same.
Mickelsen Reid A. (Bellevue WA) Chen Wen S. (Seattle WA), Apparatus for forming thin-film heterojunction solar cells employing materials selected from the class of I-III-VI2.
Amundson,Karl R.; Chen,Yu; Denis,Kevin L.; Drzaic,Paul S.; Kazlas,Peter T.; Ritenour,Andrew P., Backplanes for display applications, and components for use therein.
Branham Barry H. (Ballwin MO) Cox James L. (Ladue MO) Boineau John P. (Ladue MO) Schuessler Richard B. (Ballwin MO), Computerized three-dimensional cardiac mapping with interactive visual displays.
Abramson, Justin; Amundson, Karl R.; Danner, Guy M.; Duthaler, Gregg M.; Gates, Holly G.; Honeyman, Charles H.; Knaian, Ara N.; Morrison, Ian D.; O'Neil, Steven J.; Paolini, Jr., Richard J.; Pullen, , Electro-optic displays, and methods for driving same.
Credelle, Thomas Lloyd; Gengel, Glenn; Stewart, Roger Green; Joseph, William Hill, Electronic devices with small functional elements supported on a carrier.
James Gregory Bentsen ; Rolf Werner Biernath, Film based addressable programmable electronic matrix articles and methods of manufacturing and using the same.
Gazdik Charles E. (Endicott NY) McBride Donald G. (Binghamton NY) Seraphim Donald P. (Vestal NY) Toole Patrick A. (Westport CT), Full panel electronic packaging structure and method of making same.
Tachibana,Takeshi; Hayashi,Kazushi; Inoue,Kenichi; Yokota,Yoshihiro; Kobashi,Koji; Kawakami,Nobuyuki; Kobori,Takashi, Heat spreader and semiconductor device and package using the same.
Greenberg, Robert J.; Talbot, Neil Hamilton; Neysmith, Jordan Matthew; Ok, Jerry; Jiang, Honggang, Implantable microelectronic device and method of manufacture.
Bassous Ernest (Riverdale NY) Kuhn Lawrence (Ossining NY) Taub Howard H. (Mount Kisco NY), Jet nozzle structure for electrohydrodynamic droplet formation and ink jet printing system therewith.
Chan Kevin Kok ; D'Emic Christopher Peter ; Jones Erin Catherine ; Solomon Paul Michael ; Tiwari Sandip, Method for making bonded metal back-plane substrates.
Cann Gordon L. (Laguna Beach) Shephard ; Jr. Cecil B. (Laguna Beach) McKevitt Frank X. (Anaheim Hills CA), Method for plasma deposition on apertured substrates.
Mech,Brian V.; Greenberg,Robert J.; DelMain,Gregory J., Method of forming an implantable electronic device chip level hermetic and biocompatible electronics package using SOI wafers.
Gresser Joseph D. (Brookline MA) Trantolo Debra J. (Princeton MA) Wise Donald L. (Belmont MA) Wnek Gary E. (Latham NY), Method of making biopolymer-based nonlinear optical materials.
Smith, John Stephen; Hadley, Mark A.; Craig, Gordon S. W.; Nealey, Paul F., Methods and apparatuses for improved flow in performing fluidic self assembly.
John Stephen Smith ; Mark A. Hadley ; Gordon S. W. Craig ; Frank Lowe, Methods for forming openings in a substrate and apparatuses with these openings and methods for creating assemblies with openings.
Bakhit Gabriel G. (Huntington Beach CA) Pillai Vincent A. (Irvine CA) Averkiou George (Upland CA) Trask Philip A. (Laguna Hills CA), Methods of forming two-sided HDMI interconnect structures.
William A. Clark ; Mark A. Lemkin ; Thor N. Juneau ; Allen W. Roessig, Microfabricated structures with trench-isolation using bonded-substrates and cavities.
Kang Sung-gyu,KRX ; Lee Ki Bang,KRX ; Choi Jae-joon,KRX ; Jeong Hee-moon,KRX, Multilayered wafer with thick sacrificial layer using porous silicon or porous silicon oxide and fabrication method thereof.
Scher, Erik; Buretea, Mihai A.; Chow, Calvin; Empedocles, Stephen; Meisel, Andreas; Parce, J. Wallace, Nanostructure and nanocomposite based compositions and photovoltaic devices.
Kolpe Vasant V. (Mendota Heights MN) Williams Paul M. (St. Paul MN), Noble metal-polymer composites and flexible thin-film conductors prepared therefrom.
Nuzzo, Ralph G.; Rogers, John A.; Menard, Etienne; Lee, Keon Jae; Khang, Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao, Pattern transfer printing by kinetic control of adhesion to an elastomeric stamp.
Gregg Duthaler ; Karl R. Amundson ; Paul S. Drzaic ; Peter T. Kazlas ; Jianna Wang, Preferred methods for producing electrical circuit elements used to control an electronic display.
Nuzzo, Ralph G.; Rogers, John A.; Menard, Etienne; Lee, Keon Jae; Khang, Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao; Ko, Heung Cho; Mack, Shawn, Printable semiconductor structures and related methods of making and assembling.
Nuzzo, Ralph G.; Rogers, John A.; Menard, Etienne; Lee, Keon Jae; Khang, Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao; Ko, Heung Cho; Mack, Shawn, Printable semiconductor structures and related methods of making and assembling.
Hara Kazukuni,JPX ; Tokura Norihito,JPX ; Miyajima Takeshi,JPX ; Fuma Hiroo,JPX ; Kano Hiroyuki,JPX, Process for producing a semiconductor device having a single thermal oxidizing step.
Rogers, John A.; Nuzzo, Ralph G.; Meitl, Matthew; Ko, Heung Cho; Yoon, Jongseung; Menard, Etienne; Baca, Alfred J., Release strategies for making transferable semiconductor structures, devices and device components.
Cole ; Jr. Herbert S. (Burnt Hills NY) Sitnik-Nieters Theresa A. (Scotia NY) Wojnarowski Robert J. (Ballston Lake NY) Lupinski John H. (Vienna VA), Reworkable high density interconnect structure incorporating a release layer.
Chen, Shiuh-Hui Steven; Garza, Raymond; Ross, Carl; Turalski, Stefan, Semiconductor wafer having a thin die and tethers and methods of making the same.
Salerno Jack P. ; Zavracky Paul M. ; Spitzer Mark B. ; Dingle Brenda, Single crystal silicon arrayed devices with optical shield between transistor and substrate.
Chang Mike F. ; Owyang King ; Hshieh Fwu-Iuan ; Ho Yueh-Se ; Dun Jowei ; Fusser Hans-Jurgen,DEX ; Zachai Reinhard,DEX, Surface mount and flip chip technology with diamond film passivation for total integated circuit isolation.
Beyer Klaus D. (Poughkeepsie NY) Hsieh Chang-Ming (Fishkill NY) Hsu Louis L. (Fishkill NY) Kotecki David E. (Hopewell Junction NY) Yuan Tsoring-Dih (Hopewell Junction NY), Thermal dissipation of integrated circuits using diamond paths.
Ikemizu,Dai; Kataoka,Emiko; Suzuki,Takatugu; Yoshida,Kazuya; Yamashita,Hiroyuki, Thermal transfer recording material and thermal transfer recording method.
Suzuki,Taro; Fukui,Daisuke; Fujita,Masahiro, Thermally transferable image protective sheet, method for protective layer formation, and record produced by said method.
Parker John L. (Lane Cove AUX) Treaba Claudiu G. (Wollstonecraft AUX), Use of bioresorbable polymers in cochlear implants and other implantable devices.
Hadley, Mark A.; Chiang, Ann; Craig, Gordon S. W.; Jacobsen, Jeffrey Jay; Smith, John Stephen; Tu, Jay; Stewart, Roger Green, Web fabrication of devices.
Jeffrey Jay Jacobsen ; Glenn Wilhelm Gengel ; Mark A. Hadley ; Gordon S. W. Craig ; John Stephen Smith, Web process interconnect in electronic assemblies.
Rogers, John A.; Fan, Jonathan; Yeo, Woon-Hong; Su, Yewang; Huang, Yonggang; Zhang, Yihui, Self-similar and fractal design for stretchable electronics.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.