[특허]Materials, fabrication equipment, and methods for stable, sensitive photodetectors and image sensors made therefrom

[미국특허] Materials, fabrication equipment, and methods for stable, sensitive photodetectors and image sensors made therefrom 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	H01L-031/00 H01L-031/101 H01L-031/032 H01L-031/109 H01L-031/0336 H01L-031/0352 H01L-031/0224 H01L-031/0384 H01L-031/09 H01L-027/146
출원번호	US-0961261 (2015-12-07)
등록번호	US-9691931 (2017-06-27)
발명자 / 주소	Ivanov, Igor Constantin Sargent, Edward Hartley Tian, Hui
출원인 / 주소	InVisage Technologies, Inc.
대리인 / 주소	Schwegman Lundberg & Woessner, P.A.
인용정보	피인용 횟수 : 1 인용 특허 : 67

초록 ▼

Optically sensitive devices include a device comprising a first contact and a second contact, each having a work function, and an optically sensitive material between the first contact and the second contact. The optically sensitive material comprises a p-type semiconductor, and the optically sensitive material has a work function. Circuitry applies a bias voltage between the first contact and the second contact. The optically sensitive material has an electron lifetime that is greater than the electron transit time from the first contact to the second contact when the bias is applied between the first contact and the second contact. The first contact provides injection of electrons and blocking the extraction of holes. The interface between the first contact and the optically sensitive material provides a surface recombination velocity less than 1 cm/s.

대표청구항 ▼

1. An optically sensitive device comprising: a first contact;an n-type semiconductor;an optically sensitive material comprising a p-type semiconductor; anda second contact; a magnitude of the work function of the optically sensitive material being at least 0.4 eV greater than a magnitude of the work function of the second contact;the optically sensitive material having an electron lifetime that is greater than an electron transit time from the first contact to the second contact when bias is applied between the first contact and the second contact;the n-type semiconductor providing injection of electrons and blocking extraction of holes; andthe interface between the n-type semiconductor and the optically sensitive material providing a surface recombination velocity less than 1 cm/s; the n-type semiconductor being an oxide of the first contact formed through exposure to water, oxygen, or other oxidizing species, as a result of the presence of exposed metal in the first contact and where, under electrical bias, the first contact preventing the extraction of holes.

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Tian, Hui; Sargent, Edward, Materials, systems and methods for optoelectronic devices.
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A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

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[미국특허] Materials, fabrication equipment, and methods for stable, sensitive photodetectors and image sensors made therefrom 원문보기