초록 ▼

A packaged integrated circuit for operating reliably at elevated temperatures is provided. The packaged integrated circuit includes a modified extracted die, which includes one or more extended bond pads, a package comprising a base and a lid, and a plurality of new bond wires. The modified extracte

A packaged integrated circuit for operating reliably at elevated temperatures is provided. The packaged integrated circuit includes a modified extracted die, which includes one or more extended bond pads, a package comprising a base and a lid, and a plurality of new bond wires. The modified extracted die is placed into a cavity of the base. After the modified extracted die is placed into the cavity, the plurality of new bond wires are bonded between the one or more extended bond pads of the modified extracted die and package leads of the package base or downbonds. After bonding the plurality of new bond wires, the lid is sealed to the base.

대표청구항 ▼

1. A packaged integrated circuit comprising: a rebonded die, comprising: a modified extracted die, comprising an extracted die comprising original die pads on a top surface of the extracted die and one or more extended bond pads applied over the original die pads, wherein each of the one or more ext

1. A packaged integrated circuit comprising: a rebonded die, comprising: a modified extracted die, comprising an extracted die comprising original die pads on a top surface of the extracted die and one or more extended bond pads applied over the original die pads, wherein each of the one or more extended bond pads comprising: a first portion comprising a first plurality of layers in direct contact with and matching the shape of one of an original die pad and the original die pad with an original ball bond attached to the original die pad; anda second portion comprising a second plurality of layers in direct contact with and matching the shape of a non-die pad area of the top surface and connected to the first portion, wherein the first portion completely covers one of the original die pad or the original die pad with the original ball bond attached to the original die pad; anda plurality of new bond wires;a package comprising a base and a lid;wherein the extracted die is a fully functional semiconductor die that has been removed from a finished packaged integrated circuit, wherein the modified extracted die is placed into a cavity of the base, wherein after the modified extracted die is placed into the cavity, the plurality of new bond wires are bonded between second portions of the one or more extended bond pads of the modified extracted die and package leads of the package base or downbonds, wherein after bonding the plurality of new bond wires for the rebonded die, the lid is sealed to the base. 2. The packaged integrated circuit as recited in claim 1, at least one of the one or more extended bond pads comprising a plurality of layers, wherein at least one of the layers of the plurality of layers is a different conductive material than a different layer of the plurality of layers. 3. The packaged integrated circuit as recited in claim 1, wherein the modified extracted die is the extracted die after one or more extended bond pads have been added to the extracted die, wherein the first and second portions are physically located on the extracted die. 4. The packaged integrated circuit as recited in claim 3, wherein the one or more extended bond pads are provided by sputtering a redistribution layer on the extracted die, the redistribution layer comprising a conductive material suitable for use as a die pad. 5. The packaged integrated circuit as recited in claim 3, wherein the one or more extended bond pads are provided by spraying, by a 3D printer, one or more extended bond pads on the extracted die, wherein the 3D printer sprays the one or more extended bond pads with a conductive material suitable for use as a die pad. 6. The packaged integrated circuit as recited in claim 5, wherein the 3D printer sprays the first portion and second portion of the one or more extended bond pads, wherein the thickness of the second portion of the one or more extended bond pads is the same as or greater than the thickness of the first portion of the one or more extended bond pads. 7. The packaged integrated circuit as recited in claim 5, wherein bonding the new bond wire comprises ultrasonically bonding a new bond wire to the second portion of the one or more extended bond pads, wherein a new ball bond on the second portion of the one or more extended bond pads provides interconnection between the new bond wire and the extended bond pad. 8. The packaged integrated circuit as recited in claim 6, wherein after bonding and before sealing, the package lid is placed on the package base and the package base and lid are vacuum baked at a temperature of at least 200 degrees Celsius for at least one half hour. 9. The packaged integrated circuit as recited in claim 8, wherein just prior to sealing the lid to the base, a noble gas is injected into the cavity, wherein the noble gas is injected into the cavity at a pressure between 0.1 to 2 Atmospheres (ATM), at a temperature between 200 degrees Celsius and 275 degrees Celsius. 10. A packaged integrated circuit comprising: a rebonded extracted die, comprising: a modified extracted die, comprising one or more extended bond pads and an extracted die comprising original die pads on a top surface of the extracted die, wherein each of the one or more extended bond pads is in direct contact with non-original die pad areas on a top surface of the extracted die and completely covers one or more original die pads of the extracted die, wherein at least one of the one or more extended bond pads completely covers the original die pad and an original ball bond on the original die pad, wherein a 3D printer sprays the one or more extended bond pads in a plurality of layers on the extracted die, the one or more extended bond pads comprising: a conductive material suitable for use as a die pad; anda plurality of new bond wires; anda package comprising a base and a lid;wherein the extracted die is a fully functional semiconductor die that has been removed from a finished packaged integrated circuit, wherein the modified extracted die is placed into a cavity of the base, wherein after the modified extracted die is placed into the cavity, the plurality of new bond wires are bonded between portions of the one or more extended bond pads in direct contact with a top surface of the extracted die and package leads of the package base or downbonds, wherein after bonding the plurality of new bond wires of the rebonded extracted die, the lid is sealed to the base.