Carbon nanotube field effect transistor-based pulse generator
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-029/06
H03K-003/84
H03K-003/012
H01L-051/00
H01L-051/05
H01L-027/28
H03K-003/037
출원번호
US-0334313
(2016-10-26)
등록번호
US-9716488
(2017-07-25)
우선권정보
CN-2015 1 0701869 (2015-10-26)
발명자
/ 주소
Wang, Pengjun
Wang, Qian
Gong, Daohui
출원인 / 주소
NINGBO UNIVERSITY
대리인 / 주소
Matthias Scholl, PC
인용정보
피인용 횟수 :
0인용 특허 :
3
초록▼
A CNFET based pulse generator, including a first Carbon Nanotube Field Effect Transistor (CNFET), a second CNFET, a third CNFET, a fourth CNFET, a fifth CNFET, a sixth CNFET, a seventh CNFET, an eighth CNFET, a ninth CNFET, a tenth CNFET, an eleventh CNFET, a twelfth CNFET, a thirteenth CNFET, and a
A CNFET based pulse generator, including a first Carbon Nanotube Field Effect Transistor (CNFET), a second CNFET, a third CNFET, a fourth CNFET, a fifth CNFET, a sixth CNFET, a seventh CNFET, an eighth CNFET, a ninth CNFET, a tenth CNFET, an eleventh CNFET, a twelfth CNFET, a thirteenth CNFET, and a fourteenth CNFET. The first CNFET, the third CNFET, the fifth CNFET, the seventh CNFET, the tenth CNFET, the twelfth CNFET, and the thirteenth CNFET are P-type CNFETs. The second CNFET, the fourth CNFET, the sixth CNFET, the eighth CNFET, the ninth CNFET, the eleventh CNFET, and the fourteenth CNFET are N-type CNFETs.
대표청구항▼
1. A Carbon Nanotube Field Effect Transistor (CNFET) based pulse generator, comprising: a first CNFET;a second CNFET;a third CNFET;a fourth CNFET;a fifth CNFET;a sixth CNFET;a seventh CNFET;an eighth CNFET;a ninth CNFET;a tenth CNFET;an eleventh CNFET;a twelfth CNFET;a thirteenth CNFET; anda fourtee
1. A Carbon Nanotube Field Effect Transistor (CNFET) based pulse generator, comprising: a first CNFET;a second CNFET;a third CNFET;a fourth CNFET;a fifth CNFET;a sixth CNFET;a seventh CNFET;an eighth CNFET;a ninth CNFET;a tenth CNFET;an eleventh CNFET;a twelfth CNFET;a thirteenth CNFET; anda fourteenth CNFET; wherein the first CNFET, the third CNFET, the fifth CNFET, the seventh CNFET, the tenth CNFET, the twelfth CNFET, and the thirteenth CNFET are P-type CNFETs;the second CNFET, the fourth CNFET, the sixth CNFET, the eighth CNFET, the ninth CNFET, the eleventh CNFET, and the fourteenth CNFET are N-type CNFETs;a gate of the first CNFET, a gate of the second CNFET, a source of the seventh CNFET, a gate of the eighth CNFET, and a gate of the thirteenth CNFET are connected together, and a connection end thereof is a signal input end of the pulse generator;a source of the first CNFET, a substrate of the first CNFET, a source of the third CNFET, a substrate of the third CNFET, a source of the fifth CNFET, a substrate of the fifth CNFET, a substrate of the seventh CNFET, a source of the tenth CNFET, a substrate of the tenth CNFET, a source of the twelfth CNFET, a substrate of the twelfth CNFET, and a substrate of the thirteenth CNFET are connected to a power supply;a drain of the first CNFET, a drain of the second CNFET, a gate of third CNFET, and a gate of the fourth CNFET are connected together;a drain of the third CNFET, a drain of the fourth CNFET, a gate of the fifth CNFET, and a gate of the sixth CNFET are connected together;a drain of the fifth CNFET, a drain of the sixth CNFET, a gate of the seventh CNFET, a gate of the ninth CNFET, a gate of the twelfth CNFET, and a gate of the fourteenth CNFET are connected together;a drain of the seventh CNFET, a drain of the eighth CNFET, a gate of the tenth CNFET, and a gate of the eleventh CNFET are connected together;a source of the eighth CNFET, a drain of the ninth CNFET, a drain of the twelfth CNFET, and a drain of the thirteenth CNFET are connected together;a drain of the tenth CNFET, a drain of the eleventh CNFET, a source of the thirteenth CNFET, and a drain of the fourteenth are connected together, and a connection end thereof is a signal output end of the pulse generator; anda substrate of the second CNFET, a source of the second CNFET, a substrate of the fourth CNFET, a source of the fourth CNFET, a substrate of the sixth CNFET, a source of the sixth CNFET, a substrate of the eighth CNFET, a substrate of the ninth CNFET, a source of the ninth CNFET, a substrate of the eleventh CNFET, a source of the eleventh CNFET, a substrate of the fourteenth CNFET, and a source of the fourteenth CNFET are grounded. 2. The pulse generator in claim 1, wherein the first CNFET, the second CNFET, the third CNFET, the fourth CNFET, the fifth CNFET, the sixth CNFET, the tenth CNFET, and the eleventh CNFET are CNFETs having a diameter of 0.398 nm; and the seventh CNFET, the eighth CNFET, the ninth CNFET, the twelfth CNFET, the thirteenth CNFET, and the fourteenth CNFET are CNFETs having a diameter of 0.293 nm. 3. The pulse generator of claim 1, wherein the pulse generator further comprises a signal conditioning circuit;the signal conditioning circuit comprises a fifteenth CNFET, a sixteenth CNFET, a seventeenth CNFET, and an eighteenth CNFET;the fifteenth CNFET and the seventeenth CNFET are P-type CNFETs;the sixteenth CNFET and the eighteenth CNFET are N-type CNFETs;a gate of the fifteenth CNFET and a gate of the sixteenth CNFET are connected to the signal output end of the pulse generator;a drain of the fifteenth CNFET, a drain of the sixteenth CNFET, a gate of the seventeenth CNFET, and a gate of the eighteenth CNFET are connected together;a source of the fifteenth CNFET, a substrate of the fifteenth CNFET, a source of the seventeenth CNFET, and a substrate of the seventeenth CNFET are connected to the power supply;a source of the sixteenth CNFET, a substrate of the sixteenth CNFET, a source of the eighteenth CNFET, and a substrate of eighteenth CNFET are grounded; anda drain of the seventeenth CNFET is connected to a drain of the eighteenth CNFET, and a connection end thereof is an output end of the signal conditioning circuit. 4. The pulse generator of claim 3, wherein the first CNFET, the second CNFET, the third CNFET, the fourth CNFET, the fifth CNFET, the sixth CNFET, the tenth CNFET, and the eleventh CNFET are CNFETs having a diameter of 0.398 nm; andthe seventh CNFET, the eighth CNFET, the ninth CNFET, the twelfth CNFET, the thirteenth CNFET, the fourteenth CNFET, the fifteenth CNFET, the sixteenth CNFET, the seventeenth CNFET, and the eighteenth CNFET are CNFETs having a diameter of 0.293 nm.
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이 특허에 인용된 특허 (3)
Zebedee, Patrick; Rajendra, Jaganath, Digital logic circuit, shift register and active matrix device.
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