최소 단어 이상 선택하여야 합니다.
최대 10 단어까지만 선택 가능합니다.
다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
NTIS 바로가기다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
DataON 바로가기다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
Edison 바로가기다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
Kafe 바로가기국가/구분 | United States(US) Patent 등록 |
---|---|
국제특허분류(IPC7판) |
|
출원번호 | US-0612472 (2015-02-03) |
등록번호 | US-9728437 (2017-08-08) |
발명자 / 주소 |
|
출원인 / 주소 |
|
대리인 / 주소 |
|
인용정보 | 피인용 횟수 : 26 인용 특허 : 733 |
A wafer chuck assembly includes a puck, a shaft and a base. An insulating material defines a top surface of the puck, a heater element is embedded within the insulating material, and a conductive plate lies beneath the insulating material. The shaft includes a housing coupled with the plate, and ele
A wafer chuck assembly includes a puck, a shaft and a base. An insulating material defines a top surface of the puck, a heater element is embedded within the insulating material, and a conductive plate lies beneath the insulating material. The shaft includes a housing coupled with the plate, and electrical connectors for the heater elements and the electrodes. A conductive base housing couples with the shaft housing, and the connectors pass through a terminal block within the base housing. A method of plasma processing includes loading a workpiece onto a chuck having an insulating top surface, providing a DC voltage differential across two electrodes within the top surface, heating the chuck by passing current through heater elements, providing process gases in a chamber surrounding the chuck, and providing an RF voltage between a conductive plate beneath the chuck, and one or more walls of the chamber.
1. A wafer chuck assembly, comprising: a puck comprising:an electrically insulating material defining a top surface of the puck;a heater element embedded within the electrically insulating material;a plurality of electrodes embedded within the electrically insulating material and disposed between th
1. A wafer chuck assembly, comprising: a puck comprising:an electrically insulating material defining a top surface of the puck;a heater element embedded within the electrically insulating material;a plurality of electrodes embedded within the electrically insulating material and disposed between the heater element and the top surface; andan electrically conductive plate disposed proximate to the electrically insulating material;a shaft comprising:an electrically conductive shaft housing that is electrically coupled with the plate; anda plurality of connectors, comprising electrical connectors for the heater element and electrical connectors for the electrodes; each of the electrical connectors for the plurality of electrodes comprising: an inner conductoran insulating layer about the inner conductor,a ground tube about the insulating layer, anda ceramic tube about the ground tube; anda base comprising:an electrically conductive base housing that is electrically coupled with the shaft housing; andan electrically insulating terminal block disposed within the base housing, the plurality of connectors passing through the terminal block. 2. The wafer chuck assembly of claim 1, the terminal block comprising polyether ether ketone. 3. The wafer chuck assembly of claim 1, the connectors further comprising one or more connectors for a thermocouple or a resistance temperature detector. 4. The wafer chuck assembly of claim 1, the connectors further comprising one or more fluid conduits. 5. The wafer chuck assembly of claim 4, at least one of the one or more fluid conduits being configured to provide a heat transfer gas, the top surface defining channels for the heat transfer gas to spread between the top surface and a bottom surface of a wafer. 6. The wafer chuck assembly of claim 1, further comprising a wafer processing system in which the wafer chuck assembly is disposed. 7. The wafer chuck assembly of claim 6, wherein the wafer processing system comprises: a process chamber bounded by one or more chamber walls, andone or more power supplies;wherein the wafer chuck assembly is disposed such that at least the puck is within the process chamber; andthe one or more power supplies couple with the plurality of electrodes and at least one of the one or more chamber walls to provide:an RF voltage between the electrodes and the at least one of the one or more chamber walls; anda DC voltage differential across the electrodes, for electrostatically clamping a wafer to the top surface. 8. The wafer chuck assembly of claim 6, wherein the electrically conductive plate is separated from the electrically insulating material by a gap of 0.5 to 1.5 millimeters, and wherein the wafer processing system is configured to provide a purge gas within the gap. 9. The wafer chuck assembly of claim 8, wherein the purge gas is one of helium and hydrogen, and the purge gas provides a positive pressure within the gap with respect to a surrounding process chamber. 10. The wafer chuck assembly of claim 1, wherein the electrically conductive base housing defines one or more channels for a cooling fluid. 11. The wafer chuck assembly of claim 10, the electrically conductive shaft housing comprising metal of at least 1.5 mm thickness, for removal of heat from the electrically conductive plate, through the shaft housing, to the base housing. 12. The wafer chuck assembly of claim 1, wherein the ceramic tube extends continuously from the terminal block to a bottom surface of the puck. 13. A wafer chuck assembly, comprising: a puck comprising:an electrically insulating material defining a top surface of the puck;a DC probe that extends through the top surface of the puck;a heater element embedded within the electrically insulating material;a plurality of electrodes embedded within the electrically insulating material and disposed between the heater element and the top surface; andan electrically conductive plate disposed proximate to the electrically insulating material;a shaft comprising:an electrically conductive shaft housing that is electrically coupled with the plate; anda plurality of connectors comprising: electrical connectors for the heater element,electrical connectors for the electrodes; anda connector for the DC probe;a base comprising:an electrically conductive base housing that is electrically coupled with the shaft housing; andan electrically insulating terminal block disposed within the base housing, the plurality of connectors passing through the terminal block;and further comprising:a wafer processing system in which the wafer chuck assembly is disposed, the wafer processing system comprising:a process chamber bounded by one or more chamber walls, andone or more power supplies;wherein the wafer chuck assembly is disposed such that at least the puck is within the process chamber; andthe one or more power supplies couple with the plurality of electrodes and at least one of the one or more chamber walls to provide:an RF voltage between the electrodes and the at least one of the one or more chamber walls; anda DC voltage differential across the electrodes, for electrostatically clamping a wafer to the top surface. 14. The wafer chuck assembly of claim 13, wherein a power supply of the one or more power supplies adjusts a DC offset between at least one of the electrodes and the at least one of the one or more chamber walls in response to a signal from the DC probe.
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