[특허]Integrated apparatus for efficient removal of halogen residues from etched substrates

[미국특허] Integrated apparatus for efficient removal of halogen residues from etched substrates 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	H01L-021/306 H01L-021/02 H01L-021/67 H01L-021/687
출원번호	US-0201170 (2008-08-29)
등록번호	US-9735002 (2017-08-15)
발명자 / 주소	Kawaguchi, Mark Naoshi Lo, Kin Pong Hoogensen, Brett Christian Wen, Sandy M. Kim, Steven H.
출원인 / 주소	Applied Materials, Inc.
대리인 / 주소	Patterson + Sheridan, LLP
인용정보	피인용 횟수 : 0 인용 특허 : 42

초록 ▼

A method and apparatus for removing volatile residues from a substrate are provided. In one embodiment, a method for volatile residues from a substrate includes providing a processing system having a load lock chamber and at least one processing chamber coupled to a transfer chamber, treating a substrate in the processing chamber with a chemistry comprising halogen, and removing volatile residues from the treated substrate in the load lock chamber.

대표청구항 ▼

1. An apparatus for removing halogen-containing residues from a substrate, comprising: at least one etch chamber;a load lock chamber interfaced with a heat module that is adapted to heat a substrate disposed in the load lock chamber;a transfer chamber having a robot disposed therein that is adapted to transfer the substrate between the etch chamber and the load lock chamber;an end point detector for detecting an end point of a volatile residues removal process performed in the heater module disposed in the load lock chamber; anda remote plasma source coupled to the load lock chamber; anda gas distribution ring formed as a vent passage sequentially coupled to the remote plasma source and further to a gas source disposed in the load lock chamber, wherein the gas distribution ring is fabricated by a material transmissive to heat generated from the heater module;wherein the load lock chamber is adapted to transfer the substrate between a substantially atmospheric environment and a vacuum environment of the transfer chamber. 2. The apparatus of claim 1, wherein the load lock chamber further comprises: a temperature controlled pedestal disposed in the load lock chamber is configured to cool the substrate. 3. The apparatus of claim 1, wherein the heat module is capable of heating a substrate disposed in the load lock chamber to a temperature between about 20 degrees Celsius and about 400 degrees Celsius. 4. The apparatus of claim 1 wherein the gas source contains at least one of O2, O3, water vapor (H2O), H2, alkanes, alkenes and nitrogen gas (N2). 5. The apparatus of claim 1 wherein the gas source contains at least one of nitrogen gas (N2), argon (Ar) and helium (He). 6. The apparatus of claim 1 wherein the gas source is configured to provide a gas mixture comprising O2 and N2. 7. The apparatus of claim 1 further comprising: a power source arranged to provide a plasma in the load lock chamber. 8. The apparatus of claim 1 further comprising the gas source configured to provide at least one of O2, O3, water vapor (H2O), H2, alkanes, alkenes, and nitrogen gas (N2) to the remote plasma source. 9. The apparatus of claim 1 further comprising: a gas source coupled to the etch chamber, the gas source configured to provide at least one of hydrogen bromide (HBr), chlorine (Cl2), and carbon tetrafluoride (CF4). 10. The apparatus of claim 1, wherein the load lock chamber further comprises: a first loading port adapted for transferring the substrate between the load lock chamber and the substantially atmospheric environment; anda second loading port adapted for transferring the substrate between the load lock chamber and the vacuum environment of the transfer chamber. 11. The apparatus of claim 10, wherein the load lock chamber further comprises: a first slit valve adapted to selectively seal the first loading port to isolate the load lock chamber from the substantially atmospheric environment; anda second slit valve adapted to selectively seal the second loading port to isolate the load lock chamber from the vacuum environment of the transfer chamber. 12. The apparatus of claim 1, further comprising a pressure control system coupled to the load lock chamber, wherein the pressure control system is adapted to pump down and vent the load lock chamber to facilitate transferring the substrate between the substantially atmospheric environment and the vacuum environment of the transfer chamber. 13. The apparatus of claim 1, wherein the gas distribution ring comprises an array of holes. 14. The apparatus of claim 1, wherein the gas distribution ring is disposed in a lid of the load lock chamber and circumscribes the heater module. 15. The apparatus of claim 2, further comprising: a transparent window disposed between the heater module and the temperature controlled pedestal. 16. The apparatus of claim 15, wherein the gas distribution ring is disposed adjacent to the transparent window and circumscribes the transparent window.

이 특허에 인용된 특허 (42) 인용/피인용 타임라인 분석

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[미국특허] Integrated apparatus for efficient removal of halogen residues from etched substrates 원문보기