Resist composition and method for producing resist pattern
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
G03F-007/004
G03F-007/30
G03F-007/039
G03F-007/075
G03F-007/085
출원번호
US-0085220
(2016-03-30)
등록번호
US-9740097
(2017-08-22)
우선권정보
JP-2015-073094 (2015-03-31)
발명자
/ 주소
Sugihara, Masako
Nakanishi, Junji
출원인 / 주소
SUMITOMO CHEMICAL COMPANY, LIMITED
대리인 / 주소
Birch, Stewart, Kolasch & Birch, LLP
인용정보
피인용 횟수 :
0인용 특허 :
13
초록▼
A resist composition contains: a resin having an acid-labile group, an acid generator, a compound having two or more phenolic-hydroxy groups and being other than a resin, and a solvent. The resist composition of the disclosure can provide a resist pattern showing excellent shape and detachability, t
A resist composition contains: a resin having an acid-labile group, an acid generator, a compound having two or more phenolic-hydroxy groups and being other than a resin, and a solvent. The resist composition of the disclosure can provide a resist pattern showing excellent shape and detachability, therefore, the present resist composition can be used for semiconductor microfabrication with resist patterns showing excellent shape.
대표청구항▼
1. A resist composition comprising: a resin having an acid-labile group,a novolak resin of which the weight average molecular weight is 3,000 to 10,000,an acid generator,a compound having two or more phenolic-hydroxy groups and being other than a resin, anda solvent. 2. The resist composition accord
1. A resist composition comprising: a resin having an acid-labile group,a novolak resin of which the weight average molecular weight is 3,000 to 10,000,an acid generator,a compound having two or more phenolic-hydroxy groups and being other than a resin, anda solvent. 2. The resist composition according to claim 1 wherein the resin having an acid-labile group is a resin having a structural unit represented by formula (a1-2): wherein Ra5 represents a hydrogen atom or a methyl group,Ra1′ and Ra2′ each independently represent a hydrogen atom or a C1 to C12 hydrocarbon group, and Ra3′ represents a C1 to C20 hydrocarbon group, orRa1′ represents a hydrogen atom or a C1 to C12 hydrocarbon group, and Ra2′ and Ra3′ are bonded together with a carbon atom and an oxygen atom bonded thereto to form a divalent heterocyclic group having 2 to 20 carbon atoms, and a methylene group contained in the hydrocarbon group or the divalent heterocyclic group may be replaced by an oxygen atom or a sulfur atom,Ra6 in each occurrence independently represents a C1 to C6 alkyl group or a C1 to C6 alkoxy group, and“m” represents an integer of 0 to 4. 3. The resist composition according to claim 1 wherein the acid generator is a compound having a group represented by formula (B1): wherein Rb1 represents a C1 to C18 hydrocarbon group in which a hydrogen atom may have a fluorine atom and in which a methylene group may be replaced by an oxygen atom or a carbonyl group. 4. The resist composition according to claim 1 wherein the compound having two or more phenolic-hydroxy groups is a compound represented by formula (I): wherein Xi represents a single bond or an oxygen atom,A represents a C1 to C6 alkanediyl group where a methylene group may be replaced by an oxygen atom, provided that when Xi represents an oxygen atom, a methylene group bonded to Xi is not replaced by an oxygen atom,“i1” and “i2” each independently represent an integer of 0 to 4, provided that the total number of i1 and i2 is 2 or more,Ri12 and Ri13 in each occurrence independently represent a halogen atom or a C1 to C12 alkyl group,“i3” and “i4” each independently represent an integer of 0 to 4,Ri1 represents a hydrogen atom or an optionally substituted C1 to C6 alkyl group, or Ri1 may be bonded to A together with carbon atoms and Xi to form an optionally substituted 5 to 12-membered saturated ring,provided that the total number of “i1” and “i3” is 4 or less and the total number of “i1” and “i4” is 5 or less. 5. A method for producing a resist pattern comprising steps (1) to (4); (1) applying the resist composition according to claim 1 onto a substrate;(2) drying the applied composition to form a composition layer;(3) exposing the composition layer; and(4) developing the exposed composition layer.
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이 특허에 인용된 특허 (13)
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Meier Kurt (Allschwil CHX) Eugster Giuliano (Itingen CHX) Schwarzenbach Franz (Reinach CHX) Zweifel Hans (Basel CHX), Curable composition and the use thereof.
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