This invention enables Frequency Selective Surface (“FSS”) and Artificial Magnetic Conductor (“AMC”) which exhibits Electromagnetic Band Gap (“EBG”) in any of the substrate's layer from a small and thin systems and sub-systems in package to a large-format PCBs. The metamaterial substrate may be inte
This invention enables Frequency Selective Surface (“FSS”) and Artificial Magnetic Conductor (“AMC”) which exhibits Electromagnetic Band Gap (“EBG”) in any of the substrate's layer from a small and thin systems and sub-systems in package to a large-format PCBs. The metamaterial substrate may be integrated with electronic circuit components or buried in PCBs for circuit designs capable of transmitting, receiving and reflecting electromagnetic energy, altering electromagnetic properties of natural circuit materials, enhancing electrical characteristics of electrical components (such as filters, antennas, baluns, power dividers, transmission lines, amplifiers, power regulators, and printed circuits elements) in systems and sub-systems circuit designs. The metamaterial substrate creates new electrical characteristics, properties and systems, sub-systems or component's specification not readily available with conventional circuit materials, substrates, and PCBs. The metamaterial substrate can be less than 70 μm thick and buried into any PCB layer.
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1. An apparatus comprising a substantially small sized and thinner electromagnetic band gap structure for a predetermined band gap frequency band, said apparatus comprising: a. coplanar conductive unit elements that are periodically arrayed with an edge to edge spacing d between each of the adjacent
1. An apparatus comprising a substantially small sized and thinner electromagnetic band gap structure for a predetermined band gap frequency band, said apparatus comprising: a. coplanar conductive unit elements that are periodically arrayed with an edge to edge spacing d between each of the adjacent said coplanar conductive unit elements forming a first layer,b. a dielectric having a thickness hr and a relative dielectric permittivity ∈r forming a second layer,c. a contiguous conductive plane forming a third layer,d. a capacitive surface means arranged in part by the length of the outer perimeter of each of said coplanar conductive unit elements, in part by the spacing d between each of the adjacent said coplanar conductive unit elements and in part by said relative dielectric permittivity ∈r of said dielectric for enabling a substantially increased distributed capacitance being electrically coupled in series between each of the adjacent said coplanar conductive unit elements in the array on said first layer,e. an inductive connection means arranged beside said capacitive surface means for enabling a substantially increased distributed inductance being electrically coupled in shunt between each of said coplanar conductive unit elements in the array on said first layer and said contiguous conductive plane on said third layer and with said dielectric therein,f. a composite reference plane comprising said first layer, second layer and third layer, forming a sufficient resonance circuit with said predetermined band gap frequency band including said capacitive surface means and said inductive connection means,g. a first miniature means originated from said inductive connection means for enabling a first ratio, alpha, of said thickness hr to the free space wavelength of at least one use frequency falling within said predetermined band gap frequency band, to be such that as to minimize said thickness hr while providing said sufficient resonance circuit of said composite reference plane, andh. a second miniature means originated from said capacitive surface means for enabling a second ratio, beta, of the length of at least one side of the outer perimeter of each of said coplanar conductive unit elements to the free space wavelength of at least one use frequency falling within said predetermined band gap frequency band, and a third ratio, gamma, of the spacing d to the free space wavelength of at least one use frequency falling within said predetermined band gap frequency band, to be such that as to minimize the length of the outer perimeter and the spacing d while providing said sufficient resonance circuit of said composite reference plane, whereby the electromagnetic band gap structure can be made substantially thinner and smaller in overall dimensions to integrate readily and practically with electrical circuits and microelectronic devices that have constraints in dimensions and thickness. 2. The apparatus of claim 1 further comprising a third miniature means made up with the spacing d of said second miniature means and said thickness hr of said first miniature means for establishing a fourth ratio, delta, of the spacing d to said thickness hr, said ratio delta being substantially greater than 1. 3. The apparatus of claim 1 wherein each of said coplanar conductive unit elements further comprises a coplanar contiguous conductive area inside which surrounds an opening. 4. The apparatus of claim 3 wherein said opening contains at least one coplanar inductive element inside and at least one coplanar terminal electrode being centrally positioned in said opening, and wherein said coplanar contiguous conductive area and said coplanar terminal electrode are electrically connected in series by said coplanar inductive element. 5. The apparatus of claim 4 wherein said coplanar inductive element is made with at least one coplanar conductive wire structure originating from a centrally positioned origin. 6. The apparatus of claim 4 wherein said coplanar terminal electrode is electrically connected by a conductive post to said contiguous conductive plane. 7. The apparatus of claim 4 wherein said coplanar terminal electrode is a means for constituting an electrical coupling to said contiguous conductive plane through said second layer, of said dielectric, therein. 8. The apparatus of claim 1 wherein said inductive connection means comprises an opening, at least one coplanar inductive element and at least one coplanar terminal electrode inside each of said coplanar conductive unit elements on said first layer, and wherein said coplanar inductive element is positioned inside said opening and electrically connected in series between the perimeter of said opening and said coplanar terminal electrode, and wherein said coplanar terminal electrode is centrally positioned inside said opening and is a means for constituting an electrical coupling from said coplanar inductive element to said contiguous conductive plane through said dielectric therein. 9. The apparatus of claim 8 wherein said coplanar inductive element is made with at least one coplanar conductive wire structure originating from a centrally positioned origin. 10. The apparatus of claim 8 further comprises a conductive post connected between said coplanar terminal electrode and said contiguous conductive plane. 11. The apparatus of claim 1 wherein said inductive connection means comprises a terminal opening on said third layer inside said contiguous conductive plane so as to correspond to each of said coplanar conductive unit elements, a conductive post and a chip inductor, wherein said conductive post is arranged orthogonal and electrically connected between each of said coplanar conductive unit elements and either of terminals of said chip inductor at said terminal opening, and the other terminal of said chip inductor is connected to said contiguous conductive plane. 12. The apparatus of claim 1 wherein said first miniature means associated with said thickness hr is arranged to provide said first ratio alpha of less than 0.02. 13. The apparatus of claim 1 wherein said first miniature means associated with said thickness hr is arranged to provide said first ratio alpha of approximately from 0.001 to 0.0001. 14. The apparatus of claim 1 wherein said first miniature means associated with said thickness hr is arranged to provide said first ratio alpha of approximately 0.0002. 15. The apparatus of claim 1 wherein said second miniature means associated with the length of the outer perimeter is arranged to provide said second ratio beta of less than 0.1. 16. The apparatus of claim 1 wherein said second miniature means associated with the length of the outer perimeter is arranged to provide said second ratio beta of approximately from 0.01 to 0.02. 17. The apparatus of claim 1 wherein said second miniature means associated with the spacing d is arranged to provide said third ratio gamma of less than 0.01. 18. The apparatus of claim 1 wherein said second miniature means associated with the spacing d is arranged to provide said third ratio gamma of approximately from 0.001 to 0.004. 19. A signal transmission device comprising at least one conductor forming a first layer, a top dielectric forming a second layer, and a third layer that is a composite reference plane constituted by said apparatus according to claim 1, wherein the dielectric thickness hr of said composite reference plane of said third layer is equal or less than the dielectric thickness of said top dielectric of said second layer. 20. The signal transmission device of claim 19 wherein said conductor of said first layer is a transducer. 21. The signal transmission device of claim 19 wherein said conductor of said first layer is an antenna, whereby said antenna is enabled to resonate at a substantially lowered frequency band in a constrained area which is constituted by said substantially small sized and thinner electromagnetic band gap structure which provides a means to integrate with electrical circuits and microelectronic devices that have constraints in dimensions and thickness and means practical for antenna miniaturization and antenna in package devices. 22. The signal transmission device of claim 21 further comprising a magneto dielectric materials positioned on top of said antenna. 23. The signal transmission device of claim 19 wherein said conductor is a transmission line, whereby a substantially close to 50 Ohm impedance transmission line is constituted over said substantially small sized and thinner electromagnetic band gap structure which provides a means for enabling substantially lowered transmission loss, substantially lowered impedance variation and substantially lowered reflection at either terminals of said signal transmission device. 24. The signal transmission device of claim 23 further comprising an upper dielectric positioned on top of said transmission line and a contiguous conductive plane being positioned on top of said upper dielectric. 25. The signal transmission device of claim 23 further comprising an upper dielectric positioned on top of said transmission line and an upper composite reference plane being positioned on top of said upper dielectric, wherein said upper composite reference plane is a vertically flipped replication of said composite reference plane of said signal transmission device. 26. A 3D system-in-package device comprising at least one of said apparatus according to claim 1 as a composite reference plane. 27. The 3D system-in-package device of claim 26 wherein said 3D system-in-package device contains a device selected from the group consisting of antennas, transmission lines, transducers, glass substrates, silicon substrates, ceramic substrates, dielectric substrates, active silicon devices, passive components, filters, conductors and printed circuits. 28. A method of making a substantially small sized and thinner electromagnetic band gap structure for a predetermined band gap frequency band, comprising: a. providing an array of coplanar conductive unit elements which are periodically arrayed with an edge to edge spacing d between each of the coplanar conductive unit elements to form a first layer,b. providing a dielectric having a thickness hr and a relative dielectric permittivity ∈r which forms a second layer,c. providing a contiguous conductive plane which forms a third layer,d. providing a capacitive surface means which is arranged in part by the length of the outer perimeter of each of the coplanar conductive unit elements, in part by the spacing d between each of the adjacent coplanar conductive unit elements and in part by said relative dielectric permittivity ∈r of said dielectric for enabling a substantially increased distributed capacitance being electrically coupled in series between each of the adjacent coplanar conductive unit elements in the array on said first layer,e. providing an inductive connection means which is arranged beside said capacitive surface means for enabling a substantially increased distributed inductance being electrically coupled in shunt between each of the coplanar conductive unit elements in the array on said first layer and said contiguous conductive plane on said third layer and with said dielectric therein,f. providing a composite reference plane comprising said first layer, second layer and third layer, forming a sufficient resonance circuit with said predetermined band gap frequency band including said capacitive surface means and said inductive connection means,g. providing a first miniature means which is originated from said inductive connection means for enabling a first ratio, alpha, of said thickness hr to the free space wavelength of at least one use frequency falling within said predetermined band gap frequency band, to be such that as to minimize said thickness hr while providing said sufficient resonance circuit of said composite reference plane, andh. providing a second miniature means which is originated from said capacitive surface means for enabling a second ratio, beta, of the length of at least one side of the outer perimeter of each of the coplanar conductive unit elements to the free space wavelength of at least one use frequency falling within said predetermined band gap frequency band, and a third ratio, gamma, of the spacing d to the free space wavelength of at least one use frequency falling within said predetermined band gap frequency band, to be such that as to minimize the length of the outer perimeter and the spacing d while providing said sufficient resonance circuit of said composite reference plane, whereby the electromagnetic band gap structure can be made substantially thinner and smaller in overall dimensions to integrate readily and practically with electrical circuits and microelectronic devices that have constraints in dimensions and thickness. 29. The method of claim 28 wherein said inductive connection means comprises an opening, at least one coplanar inductive element and at least one coplanar terminal electrode inside each of the coplanar conductive unit elements on said first layer, and wherein said coplanar inductive element is positioned inside said opening and electrically connected in series between the perimeter of said opening and said coplanar terminal electrode, and wherein said coplanar terminal electrode is centrally positioned inside said opening and is a means for constituting an electrical coupling from said coplanar inductive element to said contiguous conductive plane through said dielectric therein. 30. The method of claim 29 wherein said coplanar inductive element is made with at least one coplanar conductive wire structure originating from a centrally positioned origin. 31. The method of claim 29 further providing a conductive post which connects said coplanar terminal electrode and said contiguous conductive plane. 32. The method of claim 28 wherein said inductive connection means comprises a terminal opening on said third layer inside of said contiguous conductive plane so as to correspond to each of the coplanar conductive unit elements, a conductive post and a chip inductor, wherein said conductive post is arranged orthogonal and electrically connected between each of the coplanar conductive unit elements and either of terminals of said chip inductor at said terminal opening, and the other terminal of said chip inductor is connected to said contiguous conductive plane. 33. The method of claim 28 wherein said first miniature means associated with said thickness hr is arranged to provide said first ratio alpha of less than 0.02. 34. The method of claim 28 wherein said first miniature means associated with said thickness hr is arranged to provide said first ratio alpha of approximately from 0.001 to 0.0001. 35. The method of claim 28 wherein said second miniature means associated with the length of the outer perimeter is arranged to provide said second ratio beta of less than 0.1. 36. The method of claim 28 wherein said second miniature means associated with the length of the outer perimeter is arranged to provide said second ratio beta of approximately from 0.01 to 0.02. 37. The method of claim 28 wherein said second miniature means associated with the spacing d is arranged to provide said third ratio gamma of less than 0.01. 38. The method of claim 28 wherein said second miniature means associated with the spacing d is arranged to provide said third ratio gamma of approximately from 0.001 to 0.004. 39. The method of claim 28 further comprising a third miniature means made up with the spacing d of said second miniature means and said thickness hr of said first miniature means for establishing a fourth ratio, delta, of the spacing d to said thickness hr, said ratio delta being substantially greater than 1. 40. A method of making a substantially thinner and more compact signal transmission device that has at least one substantially thinner and small sized composite reference plane, wherein the composite reference plane is a three layers structure with a predetermined band gap frequency band, comprising: a. providing at least one conductor which forms a first layer,b. providing a first dielectric which has a thickness h1 and a relative dielectric permittivity ∈1 to form a second layer,c. providing an array of coplanar conductive unit elements which are periodically arrayed with an edge to edge spacing d between each of the adjacent coplanar conductive unit elements to form a third layer,d. providing a base dielectric having a thickness hr and a relative dielectric permittivity ∈r which forms a fourth layer,e. providing a contiguous conductive plane which forms a fifth layer,f. providing a capacitive surface means which is arranged in part by the length of the outer perimeter of each of the coplanar conductive unit elements, in part by the spacing d between each of the adjacent coplanar conductive unit elements and in part by said relative dielectric permittivity ∈r of said base dielectric for enabling a substantially increased distributed capacitance being electrically coupled in series between each of the adjacent coplanar conductive unit elements in the array on said third layer,g. providing an inductive connection means which is arranged beside said capacitive surface means for enabling a substantially increased distributed inductance being electrically coupled in shunt between each of the coplanar conductive unit elements in the array on said third layer and said contiguous conductive plane on said fifth layer and with said base dielectric therein,h. providing at least one composite reference plane which is arranged by a three layers structure comprising said third layer, fourth layer and fifth layer, forming a sufficient resonance circuit with said predetermined band gap frequency band including said capacitive surface means and said inductive connection means,i. providing a first miniature means which is originated from said inductive connection means for enabling a first ratio, alpha, of said thickness hr to the free space wavelength of at least one use frequency falling within said predetermined band gap frequency band of said composite reference plane, to be such that as to minimize thickness hr while providing said sufficient resonance circuit of said composite reference plane, andj. providing a second miniature means which is originated from said capacitive surface means for enabling a second ratio, beta, of the length of at least one side of the outer perimeter of each of the coplanar conductive unit elements to the free space wavelength of at least one use frequency falling within said predetermined band gap frequency band, and a third ratio, gamma, of the spacing d to the free space wavelength of at least one use frequency falling within said predetermined band gap frequency band of said composite reference plane, to be such that as to minimize the length of the outer perimeter and the spacing d while providing said sufficient resonance circuit of said composite reference plane. 41. The method of claim 40 wherein said thickness hr of said base dielectric is equal or less than said thickness h1 of said first dielectric of said second layer. 42. The method of claim 40 wherein said inductive connection means comprises an opening, at least one coplanar inductive element and at least one coplanar terminal electrode inside each of the coplanar conductive unit elements on said third layer, and wherein said coplanar inductive element is positioned inside said opening and electrically connected in series between the perimeter of said opening and said coplanar terminal electrode, and wherein said coplanar terminal electrode is centrally positioned inside said opening and is a means for constituting an electrical coupling from said coplanar inductive element to said contiguous conductive plane through said base dielectric therein. 43. The method of claim 42 wherein said coplanar inductive element is made with at least one coplanar conductive wire structure originating from a centrally positioned origin. 44. The method of claim 42 further providing at least one conductive post which connects said coplanar terminal electrode and said contiguous conductive plane. 45. The method of claim 40 wherein said first miniature means associated with said thickness hr is arranged to provide said first ratio alpha of less than 0.02. 46. The method of claim 40 wherein said first miniature means associated with said thickness hr is arranged to provide said first ratio alpha of approximately from 0.001 to 0.0001. 47. The method of claim 40 wherein said second miniature means associated with the length of the outer perimeter is arranged to provide said second ratio beta of less than 0.1. 48. The method of claim 40 wherein said second miniature means associated with the length of the outer perimeter is arranged to provide said second ratio beta of approximately from 0.01 to 0.02. 49. The method of claim 40 wherein said second miniature means associated with the spacing d is arranged to provide said third ratio gamma of less than 0.01. 50. The method of claim 40 wherein said second miniature means associated with the spacing d is arranged to provide said third ratio gamma of approximately from 0.001 to 0.004. 51. The method of claim 40 wherein said conductor of said first layer is a transducer. 52. The method of claim 40 wherein said conductor of said first layer is an antenna, whereby said antenna is enabled to resonate at a substantially lowered frequency band in a constrained area which is constituted by said substantially thinner and more compact signal transmission device with said predetermined band gap frequency band which provides a means to integrate with electrical circuits and microelectronic devices that have constraints in dimensions and thickness and means practical for antenna miniaturization and antenna in package devices. 53. The method of claim 52 further providing a magneto dielectric materials positioned on top of said antenna. 54. The method of claim 40 wherein said conductor of said first layer is a transmission line, whereby a substantially close to 50 Ohm impedance transmission line is constituted over said substantially thinner and more compact signal transmission device with said predetermined band gap frequency band which provides a means for enabling substantially lowered transmission loss, substantially lowered impedance variation and substantially lowered reflection at either terminals of said signal transmission device. 55. The method of claim 54 further providing an upper dielectric positioned on top of said transmission line and a contiguous conductive plane positioned on top of said upper dielectric. 56. The method of claim 54 further providing an upper dielectric positioned on top of said transmission line and an upper composite reference plane positioned on top of said upper dielectric, wherein said upper composite reference plane is a vertically flipped replication of said composite reference plane of the signal transmission device. 57. The method of claim 40 further comprising a third miniature means made up with the spacing d of said second miniature means and said thickness hr of said first miniature means for establishing a fourth ratio, delta, of the spacing d to said thickness hr, said ratio delta being substantially greater than 1.
Sievenpiper, Daniel F.; Hsu, Hui-Pin; Schaffner, James H.; Tangonan, Gregory L., Antenna system for communicating simultaneously with a satellite and a terrestrial system.
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