A shape memory circuit breaker includes a shape memory substrate having first and second opposed substrate ends. The shape memory substrate is configured to transition from a strained conductive configuration to a fractured non-conductive configuration. An isolation housing is coupled with the shape
A shape memory circuit breaker includes a shape memory substrate having first and second opposed substrate ends. The shape memory substrate is configured to transition from a strained conductive configuration to a fractured non-conductive configuration. An isolation housing is coupled with the shape memory substrate. The isolation housing includes first and second anchors coupled near the first and second substrate ends. A brace extends between the first and second anchors, and the brace statically positions the first and second anchors and the respective first and second substrate ends. The shape memory substrate is configured to transition from the strained conductive configuration to the fractured non-conductive configuration at or above a specified temperature range corresponding to a specified overload current range or voltage range, and the first substrate end fractures from the second substrate end at or above the specified temperature range resulting in an open circuit.
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1. A shape memory substrate circuit breaker comprising: a shape memory substrate mechanically coupled and providing an electrically conductive path between first and second anchors;an isolation housing including an isolation cavity having the shape memory substrate within the isolation cavity, the i
1. A shape memory substrate circuit breaker comprising: a shape memory substrate mechanically coupled and providing an electrically conductive path between first and second anchors;an isolation housing including an isolation cavity having the shape memory substrate within the isolation cavity, the isolation housing operating as a thermal barrier to substantially prevent heating of the shape memory substrate by a heat source separate from the shape memory substrate and outside the isolation housing;wherein the shape memory substrate transitions between a strained, electrically conductive configuration and a fractured, electrically nonconductive configuration when an overload current or overload voltage is applied across the shape memory substrate: in the strained electrically conductive configuration the shape memory substrate continuously and linearly extends between the first and second anchors, and the shape memory substrate is an electrically conductive pathway between the first and second anchors, andin the fractured electrically nonconductive configuration the shape memory substrate extends linearly in a discontinuous broken line and includes a nonconductive gap between the first and second anchors; andan equipment housing including an equipment assembly, the first and second anchors and the shape memory substrate, and wherein the equipment assembly is electrically coupled in series with the shape memory substrate, and the equipment assembly is configured to operate at specified currents and voltages, and the equipment assembly is damageable by the overload current or the overload voltage greater than the specified currents and voltages, respectively. 2. The shape memory circuit breaker of claim 1, wherein the first and second anchors are electrically insulated from the shape memory substrate. 3. The shape memory circuit breaker of claim 2, wherein the first and second anchors include insulated jaws engaged against first and second substrate ends of the shape memory substrate, respectively. 4. The shape memory circuit breaker of claim 1 comprising a brace coupled between the first and second anchors, and the isolation housing includes the brace. 5. The shape memory circuit breaker of claim 1, wherein in the strained electrically conductive configuration first and second substrate ends of the shape memory substrate include opposed fractured ends adjacent a fracture location, and in the fractured electrically nonconductive configuration the opposed fractured ends are positioned remotely from each other. 6. The shape memory circuit breaker of claim 5, wherein the opposed fracture ends are positioned a fracture length from each other in the fractured electrically nonconductive configuration, and the fracture length is around 8 to 10 percent of a total length of the shape memory substrate between the first and second substrate ends. 7. The shape memory circuit breaker of claim 1, wherein the shape memory substrate is a nickel-titanium alloy. 8. A method of protecting an equipment assembly from an electrical overload comprising: operating an equipment assembly electrically coupled in series with a linear, continuous and reactive shape memory substrate, the equipment assembly configured to operate at specified currents and voltages supplied across the shape memory substrate, and the equipment assembly is damageable by an overload current or an overload voltage greater than the specified currents and voltages, respectively;thermally isolating the shape memory substrate within an isolation housing, he isolation housing operating as a thermal barrier to substantially prevent heating of the shape memory substrate by a heat source separate from the shape memory substrate outside of the isolation housing; andtransitioning the linear, continuous and reactive shape memory substrate having a strained electrically conductive state to a linear, fractured and discontinuous shape memory substrate having a fractured electrically nonconductive state when the overload current or overload voltage is supplied across the shape memory substrate, the fractured electrically nonconductive state preventing operation of the equipment assembly. 9. The method of claim 8, wherein thermally isolating the shape memory substrate includes providing a brace between first and second anchors, the first and second anchors engaged with first and second substrate ends of the shape memory substrate. 10. The method of claim 8, wherein transitioning the shape memory substrate includes transitioning from the linear, continuous and reactive shape memory substrate to a linear, fractured and discontinuous shape memory substrate having opposed fractured ends positioned remotely from each other. 11. The method of claim 10, wherein transitioning to the linear, fractured and discontinuous shape memory substrate includes positioning the fractured ends apart a fractured length of around 8 to 10 percent of a total length of the shape memory substrate in the linear, continuous and reactive shape memory substrate.
Whitehead Charles A. (3508 S. Woodridge Rd. Birmingham AL 36330) Groom Kenneth M. (119 Hillcrest Loop Enterprise AL 36330), Hydraulic shape memory alloy actuator.
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