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In one aspect of the invention, a method to create an advanced through silicon via structure is described. A high aspect ratio through substrate via in a substrate is provided. The through substrate via has vertical sidewalls and a horizontal bottom. A metallic barrier layer is deposited on the side

In one aspect of the invention, a method to create an advanced through silicon via structure is described. A high aspect ratio through substrate via in a substrate is provided. The through substrate via has vertical sidewalls and a horizontal bottom. A metallic barrier layer is deposited on the sidewalls of the through substrate via. A nitridation process is performed to convert a surface portion of the metallic barrier layer to a nitride surface layer. The nitride surface layer enhances the nucleation of subsequent depositions. A metal is deposited to fill the through substrate via. Another aspect of the invention is a device created by the method.

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1. A method for fabricating a through substrate via structure comprising: providing a high aspect ratio through substrate via in a silicon substrate, the through substrate via having vertical silicon sidewalls and a horizontal bottom;depositing a metallic barrier layer on the vertical silicon sidewa

1. A method for fabricating a through substrate via structure comprising: providing a high aspect ratio through substrate via in a silicon substrate, the through substrate via having vertical silicon sidewalls and a horizontal bottom;depositing a metallic barrier layer on the vertical silicon sidewalls of the through substrate via;enhancing the nucleation of subsequent depositions by performing a nitridation process to convert a surface portion of the metallic barrier layer to a nitride nucleation enhancing surface layer;depositing a wetting enhancement liner layer directly over the nitride nucleation enhancing surface layer prior to filling the through substrate via with a metal;enhancing the nucleation of subsequent depositions by performing a nitridation process to convert a surface portion of the wetting enhancement layer to a second nitride nucleation enhancing surface layer;depositing the metal to fill the through substrate via; andwherein the metallic barrier layer is CoN and the wetting enhancement layer is Rh. 2. The method as recited in claim 1, wherein the aspect ratio is a ratio of a height of the through substrate via divided by a width of the through substrate via and the aspect ratio is greater than 10:1. 3. The method as recited in claim 1, wherein the metal layer is copper and the method further comprises: depositing a seed layer of copper over the second nitride nucleation enhancing surface layer;depositing an overfill layer of copper over the seed layer of copper; andperforming a planarization step to remove excess copper from the overfill layer. 4. The method as recited in claim 1, wherein the nitridation process is selected from the group of a plasma nitrididation process and a thermal nitridation process. 5. The method as recited in claim 3, wherein the overfill layer of copper is produced by an electrochemical plating process. 6. The method as recited in claim 1, wherein a plurality of through silicon vias are produced, wherein a first subset of the through silicon vias electrically connect to contacts of a first integrated circuit layer and a second subset of the through silicon vias electrically connect to contacts of a second integrated circuit layer. 7. An integrated circuit device comprising: a substrate including integrated circuit devices;a high aspect ratio through substrate via in the substrate, the through substrate via having vertical sidewalls and a horizontal bottom;a metallic barrier layer on the sidewalls of the through substrate via;a nucleation enhancing layer formed from a surface portion of the metallic barrier layer that has been converted to a nitride surface layer by a nitridation process;a wetting enhancement layer disposed directly over the nucleation enhancing layer;a second nucleation enhancing layer formed from a surface portion of the wetting enhancement layer that has been converted to a nitride surface layer by a nitridation process;a metal filling a portion of the through substrate via disposed over the second nucleation enhancing layer; andwherein the metallic barrier layer is CoN and the wetting enhancement layer is Rh. 8. The device as recited in claim 7, wherein the metal is copper and the copper is deposited as a seed layer of copper over the second nitride surface layer and an overfill layer of copper over the seed layer of copper. 9. The device as recited in claim 7, wherein the aspect ratio is a ratio of a height of the through substrate via divided by a width of the through substrate via and the aspect ratio is greater than 10:1. 10. The device as recited in claim 7, wherein a plurality of through silicon vias are produced, wherein a first subset of the through silicon vias electrically connect to contacts of a first integrated circuit layer and a second subset of the through silicon vias electrically connect to contacts of a second integrated circuit layer. 11. An integrated circuit device comprising: a substrate including integrated circuit devices, the substrate comprised of a silicon material;a high aspect ratio through substrate via in the substrate, the through substrate via having vertical sidewalls and a horizontal bottom, the vertical sidewalls comprised of the silicon material;a metallic barrier layer disposed in contact on the vertical sidewalls of the through substrate via;a first nucleation enhancing layer formed from a surface portion of the metallic barrier layer that has been converted to a nitride surface layer by a nitridation process;a wetting enhancement liner layer disposed on the metallic barrier layer;a second nucleation enhancing layer formed from a surface portion of the wetting enhancement liner has been converted to a nitride surface by a nitridation process; anda metal layer filling a portion of the through substrate via disposed over the metallic barrier layer;wherein the metallic barrier layer is CoN and the wetting enhancement layer is Rh. 12. The device as recited in claim 7, wherein the substrate is silicon and the metallic barrier layer is deposited in direct contact with the silicon substrate.