Light emitting devices and methods of manufacturing the same
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-033/00
H01L-033/32
H01L-033/46
H01L-033/12
B82Y-020/00
출원번호
US-0955981
(2015-12-01)
등록번호
US-9793432
(2017-10-17)
우선권정보
KR-10-2009-0079189 (2009-08-26)
발명자
/ 주소
Kim, Jun-Youn
Min, Bok-ki
Hong, Hyun-gi
Lee, Jae-won
출원인 / 주소
SAMSUNG ELECTRONICS CO., LTD.
대리인 / 주소
Harness, Dickey & Pierce, PLC
인용정보
피인용 횟수 :
0인용 특허 :
41
초록▼
Light emitting devices and methods of manufacturing the light emitting devices. The light emitting devices include a silicon substrate; a metal buffer layer on the silicon substrate, a patterned distributed Bragg reflector (DBR) on the metal buffer layer; and a nitride-based thin film layer on the p
Light emitting devices and methods of manufacturing the light emitting devices. The light emitting devices include a silicon substrate; a metal buffer layer on the silicon substrate, a patterned distributed Bragg reflector (DBR) on the metal buffer layer; and a nitride-based thin film layer on the patterned DBR and regions between patterns of the DBR.
대표청구항▼
1. A method of manufacturing a light emitting device, the method comprising: forming a metal buffer layer on a silicon substrate;forming an XY material layer on the metal buffer layer, wherein X is at least one of Ti, Cr, Zr, Hf, Nb, and Ta, and Y is at least one of B and B2; andforming a GaN layer
1. A method of manufacturing a light emitting device, the method comprising: forming a metal buffer layer on a silicon substrate;forming an XY material layer on the metal buffer layer, wherein X is at least one of Ti, Cr, Zr, Hf, Nb, and Ta, and Y is at least one of B and B2; andforming a GaN layer on the XY material layer,wherein the XY material layer has a first lattice constant and the GaN layer has a second lattice constant greater than the first lattice constant,wherein the XY material layer applies compressive strain to the GaN layer,wherein a distributed Bragg reflector (DBR) is between the metal buffer layer and the XY material layer. 2. The method of claim 1, wherein the metal buffer layer and the XY material layer include a common material. 3. The method of claim 1, wherein, the metal buffer layer includes a material of which a difference in lattice constants from the silicon substrate is smaller than a difference in lattice constants from the GaN layer, or a difference in thermal expansion coefficients from the silicon substrate is smaller than a difference in thermal expansion coefficients from the GaN layer. 4. The method of claim 1, wherein a thickness of the metal buffer layer is in a range of about 1 nm to about 1 μm. 5. The method of claim 1, wherein, the XY material layer includes a plurality of holes, and each hole of the plurality of holes has a diameter in a range of 10 nm to 1 μm. 6. The method of claim 5, wherein the metal buffer layer includes a plurality of holes at a position corresponding to the plurality of holes in the XY material layer. 7. The method of claim 6, further comprising: forming an AlN layer on a bottom surface in an inner wall of the plurality of holes. 8. The method of claim 5, wherein the metal buffer layer is formed to have an amorphous state. 9. A method of manufacturing a light emitting device, the method comprising: forming a metal buffer layer on a silicon substrate;forming an XY material layer on the metal buffer layer, wherein X is at least one of Ti, Cr, Zr, Hf, Nb, and Ta, and Y is at least one of B and B2; andforming a plurality of holes in the XY material layer, each hole of the plurality of holes having a diameter in a range of 10 nm to 1 μm. 10. The method of claim 9, wherein the metal buffer layer includes a plurality of holes at a position corresponding to the plurality of holes in the XY material layer. 11. The method of claim 10, further comprising: forming an MN layer on a bottom surface in an inner wall of the plurality of holes. 12. The method of claim 10, wherein the metal buffer layer is formed to have an amorphous state. 13. The method of claim 9, wherein a distributed Bragg reflector (DBR) is between the metal buffer layer and the XY material layer. 14. A method of manufacturing a light emitting device, the method comprising: forming a metal buffer layer on a silicon substrate;forming an XY material layer on the metal buffer layer, wherein X is at least one of Ti, Cr, Zr, Hf, Nb, and Ta, and Y is at least one of N, B, and B2; andforming a plurality of holes in the XY material layer, such that the metal buffer layer includes a plurality of holes at a position corresponding to the plurality of holes in the XY material layer. 15. The method of claim 14, wherein each hole of the plurality of holes in the XY material layer has a diameter in a range of 10 nm to 1 μm. 16. The method of claim 14, further comprising: forming an AlN layer on a bottom surface in an inner wall of the plurality of holes.
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