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Kafe 바로가기국가/구분 | United States(US) Patent 등록 |
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국제특허분류(IPC7판) |
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출원번호 | US-0222738 (2016-07-28) |
등록번호 | US-9812320 (2017-11-07) |
발명자 / 주소 |
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출원인 / 주소 |
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대리인 / 주소 |
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인용정보 | 피인용 횟수 : 8 인용 특허 : 692 |
According to the invention there is provided a method of filling one or more gaps created during manufacturing of a feature on a substrate by providing a deposition method comprising; introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by
According to the invention there is provided a method of filling one or more gaps created during manufacturing of a feature on a substrate by providing a deposition method comprising; introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant; introducing a second reactant to the substrate with a second dose. The first reactant is introduced with a subsaturating first dose reaching only a top area of the surface of the one or more gaps and the second reactant is introduced with a saturating second dose reaching a bottom area of the surface of the one or more gaps. A third reactant may be provided to the substrate in the reaction chamber with a third dose, the third reactant reacting with at least one of the first and second reactant.
1. A method of filling one or more gaps created during manufacturing of a feature on a substrate by providing a deposition method comprising: introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant;introducing a second r
1. A method of filling one or more gaps created during manufacturing of a feature on a substrate by providing a deposition method comprising: introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant;introducing a second reactant to the substrate with a second dose, wherein the first reactant is introduced with a subsaturating first dose reaching only a top area of the surface of the one or more gaps and the second reactant is introduced with a saturating second dose reaching a bottom area of the surface of the one or more gaps; andintroducing a third reactant to the substrate with a third dose, the third reactant reacting with at least one of the first and second reactant, wherein the second reactant is a relatively high growth rate reactant in reaction with the third reactant. 2. The method of claim 1, wherein the method comprises removing excess reactant and byproduct from the reaction chamber after each step of introducing a first, second and/or third reactant. 3. The method according to claim 1, wherein the deposition method is repeated multiple times to fill the gap. 4. A method of filling one or more gaps created during manufacturing of a feature on a substrate by providing a deposition method comprising: introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant;introducing a second reactant to the substrate with a second dose, wherein the first reactant is introduced with a subsaturating first dose reaching only a top area of the surface of the one or more gaps and the second reactant is introduced with a saturating second dose reaching a bottom area of the surface of the one or more gaps; andintroducing a third reactant to the substrate with a third dose, the third reactant reacting with at least one of the first and second reactant, wherein the first reactant is a low growth rate reactant in reaction with the third reactant. 5. The method according to claim 4, wherein the low growth rate reactant comprises silane. 6. The method according to claim 5, wherein the low growth rate reactant comprises one or more reactants of a group of reactants comprising diiodomethylsilane, methoxy(dimethyl)octylsilane, alkylchlorosilanes, alkylalkoxysilanes, and alkylaminosilanes. 7. A method of filling one or more gaps created during manufacturing of a feature on a substrate by providing a deposition method comprising: introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant;introducing a second reactant to the substrate with a second dose, wherein the first reactant is introduced with a subsaturating first dose reaching only a top area of the surface of the one or more gaps and the second reactant is introduced with a saturating second dose reaching a bottom area of the surface of the one or more gaps; andintroducing a third reactant to the substrate with a third dose, the third reactant reacting with at least one of the first and second reactant, wherein the first reactant is a relatively no growth reactant whereby the first reactant is substantially removed from the surface in reaction with the third reactant. 8. The method according to claim 7, wherein the no growth reactant is an etch sensitive reactant and the third reactant causes etching of the first reactant so as to remove the first reactant from the surface. 9. The method according to claim 8, wherein the first reactant comprises fluorine and the third reactant creates a plasma which removes fluorine from the etch sensitive reactant creating a fluorine plasma etching away the first reactant. 10. The method according to claim 9, wherein the etch sensitive reactant comprises trimethoxy (3,3,3-tri-fluoropropyl) silane. 11. The method according to claim 8, wherein the etch sensitive reactant comprises an amine group. 12. The method according to claim 11, wherein the etch sensitive reactant comprises a di-isopropyl-amine group. 13. The method according to claim 8, wherein the etch sensitive reactant comprises an alkane group. 14. The method according to claim 13, wherein the etch sensitive reactant comprises octane. 15. The method according to claim 1, wherein the relatively high growth reactant comprises silane. 16. The method according to claim 15, wherein the silane comprises silanediamine. 17. The method according to claim 16, wherein the silanediamine comprises N,N,N′,N′-tetraethyl silanediamine. 18. The method according to claim 16, wherein the silanediamine comprises amino silane. 19. The method according to claim 15, wherein the silane comprises methyl silane or diiodosilane. 20. The method according to claim 1, wherein the third reactant comprises oxygen. 21. The method according to claim 20, wherein the oxygen is activated by a plasma. 22. The method according to claim 20, wherein the oxygen is provided by ozone. 23. A method of filling one or more gaps created during manufacturing of a feature on a substrate by providing a deposition method comprising: introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant;introducing a second reactant to the substrate with a second dose, wherein the first reactant is introduced with a subsaturating first dose reaching only a top area of the surface of the one or more gaps and the second reactant is introduced with a saturating second dose reaching a bottom area of the surface of the one or more gaps; andintroducing a third reactant to the substrate with a third dose, the third reactant reacting with at least one of the first and second reactant, wherein the third reactant comprises nitrogen, hydrogen, hydrazine, and/or ammonia. 24. The method according to claim 23, wherein the third reactant is activated by a plasma. 25. The method according to claim 1, wherein the relatively high growth reactant comprises an organometal. 26. The method according to claim 25, wherein the organometal comprises an organoaluminium. 27. The method according to claim 26, wherein the organoaluminium comprises a trimethylaluminium. 28. The method according to claim 25, wherein the organometal comprises tantalum. 29. The method according to claim 28, wherein the organometal comprises tertiarybutylimido, tris(diethylamino)tantalum. 30. The method according to claim 25, wherein the first reactant is a relatively no growth reactant whereby the first reactant is not reacting with the third reactant. 31. The method according to claim 30, wherein the relatively no growth reactant comprises silane. 32. The method according to claim 31, wherein the silane comprises silanediamine. 33. The method according to claim 32, wherein the silanediamine comprises N,N,N′,N′-tetraethyl silanediamine. 34. The method according to claim 30, wherein the third reactant comprises water. 35. The method according to claim 25, wherein the first reactant is SiCl4 and the third reactant is ozone. 36. The method according to claim 1, wherein the first reactant inhibits the adsorption of the second reactant in the top area of the one or more gaps. 37. The method according to claim 1, wherein the method comprises introducing the second and third reactant simultaneously. 38. The method according to claim 1, wherein introducing a second reactant to the substrate with the saturating second dose reaching a bottom area of the surface of the one or more gaps and introducing a third reactant to the substrate with a third dose, the third reactant reacting with the second reactant is repeated multiple times to fill the gap while the first reactant is inhibiting deposition in the top area of the gap.
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