Method for preparing antibacterial and dust-removal membrane
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
B01D-067/00
B01D-053/22
B01D-071/02
B01D-069/02
C23C-016/455
C23C-016/56
A61L-009/16
출원번호
US-0028854
(2015-07-20)
등록번호
US-9815029
(2017-11-14)
우선권정보
CN-2015 1 0210127 (2015-04-28)
국제출원번호
PCT/CN2015/084475
(2015-07-20)
국제공개번호
WO2016/173126
(2016-11-03)
발명자
/ 주소
Zhong, Zhaoxiang
Wu, Xibo
Yao, Zhong
출원인 / 주소
Nanjing Tech University
대리인 / 주소
Treasure IP Group, LLC
인용정보
피인용 횟수 :
0인용 특허 :
4
초록▼
This invention discloses a method for preparing an antibacterial and dust-removal membrane. The method comprises the following steps: depositing a layer of nano-ZnO on the immersed membrane surface as the seed crystal with the atomic layer deposition instrument (ALD instrument); vertically immersing
This invention discloses a method for preparing an antibacterial and dust-removal membrane. The method comprises the following steps: depositing a layer of nano-ZnO on the immersed membrane surface as the seed crystal with the atomic layer deposition instrument (ALD instrument); vertically immersing the membrane covered with nano-ZnO layer in a hydrothermal reactor filled with crystal growth solution, heating it for a period of time, taking the membrane out and cooling it to the room temperate, and removing it from the substrate; finally, heating this membrane in a drier, and purging it with nitrogen to remove the paraffin within the membrane pore to obtain the porous membrane with nano-ZnO arrays growing on the surface.
대표청구항▼
1. A method for preparing an antibacterial and dust-removal membrane, comprising: (1) performing a pretreatment step including: washing an AAO porous membrane with an ethanol solution, and melting a paraffin solution for future use;(2) performing a pore blocking step including: adhering the pretreat
1. A method for preparing an antibacterial and dust-removal membrane, comprising: (1) performing a pretreatment step including: washing an AAO porous membrane with an ethanol solution, and melting a paraffin solution for future use;(2) performing a pore blocking step including: adhering the pretreated AAO porous membrane on a substrate horizontally to prepare a sample, clamping the sample on a glass slide with a clamping slot, and immersing the glass slide having the sample in the paraffin solution and vibrating, taking the sample out after a period of time, cooling the sample to the room temperature with a surface exposed to the paraffin upward, using a hot smooth iron sheet to remove most of the paraffin on the surface of porous membrane, and removing the residual solid paraffin on the surface through plasma etching;(3) performing a crystal seeding step including: placing the AAO membrane in the reaction chamber of ALD instrument after it is ultrasonically cleaned with acetone, ethanol and deionized water, using diethylzinc and deionized water as a precursor source respectively to provide zinc and oxygen required for the growth of ZnO, and using high purity nitrogen as a carrier and purging gas, starting deposition after it reaches to 15˜20 Pa, and keeping the deposition for a few hundreds cycles;(4) performing a crystal growth step including: preparing a mixed solution of hexamethylene tetramine and zinc nitrate of at certain concentration in proportion as a growth solution, pouring the growing solution into a hydrothermal reactor, vertically placing the substrate with the AAO porous membrane covered with ZnO layer in the hydrothermal reactor, placing the hydrothermal reactor in a drier for treatment for a period of time, cooling naturally, taking the membrane out, washing the membrane-with deionized water, and drying it to obtain the porous membrane with nano-ZnO arrays on the surface;(5) performing a pore cleaning step including: removing the porous membrane obtained in Step (4) from the substrate, horizontally placing the membrane in a drier and ensuring that the side is covered with nano-ZnO arrays upwards, heating for a period of time, purging the membrane with nitrogen, cooling and obtaining a porous membrane with nano-ZnO arrays growing on the surface and having uniform permeable pores. 2. The method for preparing an antibacterial and dust-removal membrane of claim 1, wherein the pore diameter of AAO porous membrane in Step (1) is 0.1-10 μm; and the mass concentration of the ethanol solution is 80˜95%. 3. The method for preparing an antibacterial and dust-removal membrane of claim 1, wherein the immersion temperature in Step (2) is 60˜90° C., the immersion time is 3˜5 h; and the temperature of said hot iron sheet is 60˜70° C. and a gas mixture of CH4, H2 and Ar is adopted for said plasma etching, in which the molar ratio of the gases is 1:7:5; the flow of the gas is 26˜78 sccm; a bias power is 80˜90 W; a radio-frequency power is 250˜300 W; etching speed is 10˜25 nm/min, and etching time is 1˜2 h. 4. The method for preparing an antibacterial and dust-removal membrane of claim 1, wherein pulse time and washing time of said diethylzinc in Step (3) are 0.1˜0.2 s and 3˜4 s respectively; pulse time and washing time of the deionized water are 0.1˜0.2 s and 4˜5 s respectively; the flows of carrier gas of diethylzinc and deionized water respectively are 100˜150 sccm and 150˜200 sccm; temperature of the substrate is 200˜280° C.; and number of times for growing is 100˜200 cycles. 5. The method for preparing an antibacterial and dust-removal membrane of claim 1, wherein the concentrations of hexamethylene tetramine and zinc nitrate in said mixed solution in Step (4) are both 0.003˜0.1 mol/L; the molar ratio of hexamethylene tetramine and zinc nitrate in the solution is 1:1; and the addition dose of the mixed solution is 100˜500 ml. 6. The method for preparing an antibacterial and dust-removal membrane of claim 1, wherein the temperature of said drier in Step (4) is 80˜100° C., and the treatment time is 2˜4 h. 7. The method for preparing an antibacterial and dust-removal membrane of claim 1, wherein the temperature of said drier in Step (5) is 60˜90° C.; the flow rate of nitrogen is 0.4˜0.5 m/s, and the pressure is 0.5˜0.6 MPa.
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