Semiconductor light emitting device and method of manufacturing the same
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-033/12
H01L-033/00
H01L-031/0236
H01L-021/02
H01L-033/22
H01L-033/04
출원번호
US-0172976
(2016-06-03)
등록번호
US-9831378
(2017-11-28)
우선권정보
KR-10-2015-0109489 (2015-08-03)
발명자
/ 주소
Lee, Jin Sub
Kim, Jung Sub
출원인 / 주소
SAMSUNG ELECTRONICS CO., LTD.
대리인 / 주소
Sughrue Mion, PLLC
인용정보
피인용 횟수 :
0인용 특허 :
39
초록▼
A method of manufacturing a semiconductor light emitting device is provided. The method includes forming a first region of a lower semiconductor layer on a substrate, etching an upper surface of the first region using at least one gas used in forming the first region, in-situ in a chamber in which a
A method of manufacturing a semiconductor light emitting device is provided. The method includes forming a first region of a lower semiconductor layer on a substrate, etching an upper surface of the first region using at least one gas used in forming the first region, in-situ in a chamber in which a process of forming the first region has been performed, forming a second region of the lower semiconductor layer on the first region, forming an active layer on the lower semiconductor layer, and forming an upper semiconductor layer on the active layer.
대표청구항▼
1. A method of manufacturing a semiconductor light emitting device, the method comprising: forming a first region of a lower semiconductor layer on a substrate using a carrier gas and at least one source gas;etching an upper surface of the first region using only the carrier gas by reducing a flow o
1. A method of manufacturing a semiconductor light emitting device, the method comprising: forming a first region of a lower semiconductor layer on a substrate using a carrier gas and at least one source gas;etching an upper surface of the first region using only the carrier gas by reducing a flow of the at least one source gas while maintaining a flow of the carrier gas, in-situ in a chamber in which a process of forming the first region has been performed;forming a second region of the lower semiconductor layer on the first region;forming an active layer on the lower semiconductor layer; andforming an upper semiconductor layer on the active layer. 2. The method of claim 1, wherein the carrier gas is hydrogen (H2) gas. 3. The method of claim 1, wherein the etching the upper surface of the first region comprises etching the upper surface of the first region to form concave-convex portions on the upper surface of the first region. 4. The method of claim 3, wherein the second region is formed to have a flat upper surface and fill the concave-convex portions formed on the upper surface of the first region. 5. The method of claim 3, wherein the second region is formed to have a flat upper surface and form voids at the concave-convex portions formed on the upper surface of the first region. 6. The method of claim 1, wherein the forming the first region, the etching the upper surface of the first region from the upper surface, and the forming the second region are performed in-situ in the chamber. 7. The method of claim 1, wherein a portion of the first region and a portion of the second region adjacent to an interface between the first region and the second region are formed using a same material. 8. The method of claim 1, wherein the upper surface of the first region that has been etched is a layer formed of an aluminum nitride. 9. The method of claim 8, wherein in the etching the upper surface of the first region, an inflow of the at least one source gas for formation of the aluminum nitride is blocked. 10. The method of claim 1, wherein the lower semiconductor layer comprises a buffer layer and a first conductivity-type semiconductor layer sequentially provided on the substrate. 11. The method of claim 10, wherein the first region is formed of a portion of the buffer layer. 12. The method of claim 10, wherein the lower semiconductor layer further comprises a superlattice layer provided between the buffer layer and the first conductivity-type semiconductor layer. 13. A method of manufacturing a semiconductor light emitting device, the method comprising: forming a first region of a lower semiconductor layer on a substrate using a carrier gas and at least one source gas;etching a portion of the first region using only the carrier gas by reducing a flow of the at least one source gas while maintaining a flow of the carrier gas;forming a second region of the lower semiconductor layer on the first region;forming an active layer on the lower semiconductor layer; andforming an upper semiconductor layer on the active layer. 14. The method of claim 13, wherein the forming the first region and the etching the portion of the first region are performed in-situ with a single piece of equipment. 15. A method of manufacturing a semiconductor light emitting device comprising a plurality of semiconductor layers, the method comprising: etching, during a manufacturing process, a contact interface between two of the plurality of semiconductor layers using only a carrier gas by reducing a flow of at least one source gas while maintaining a flow of the carrier gas to form an uneven surface at the contact interface, the uneven surface preventing at least one of threading dislocations and cracks in semiconductor layers subsequently disposed in the manufacturing process; andforming an active layer on the plurality of semiconductor layers. 16. The method of claim 15, wherein, during the manufacturing process, the semiconductor layers are formed on a substrate, and wherein the substrate and a semiconductor layer contacting the substrate, of the plurality of semiconductor layers, are formed of different materials. 17. The method of claim 15, wherein the uneven surface comprises concave-convex portions. 18. The method of claim 17, wherein the uneven surface further comprises a plurality of voids. 19. The method of claim 15, wherein the uneven surface comprises a plurality of voids.
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