Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01M-010/0562
H01M-004/04
H01M-004/131
H01M-004/48
H01M-004/52
H01M-004/525
H01M-004/86
H01M-004/88
H01M-008/12
H01M-010/0585
H01G-009/15
H01G-011/04
H01G-011/46
H01G-011/56
H01M-008/1253
H01M-008/126
H01M-008/1246
H01G-009/00
H01M-008/124
출원번호
US-0279254
(2016-09-28)
등록번호
US-9853325
(2017-12-26)
발명자
/ 주소
Sweeney, Daniel C.
Read, John B.
출원인 / 주소
Space Charge, LLC
대리인 / 주소
Kilpatrick Townsend & Stockton LLP
인용정보
피인용 횟수 :
1인용 특허 :
193
초록▼
Described are solid-state electrochemical energy storage devices and methods of making solid-state electrochemical energy storage devices in which components of the batteries are truly solid-state and do not comprise a gel. Nor do they rely on lithium-containing electrolytes. Electrolytes useful wit
Described are solid-state electrochemical energy storage devices and methods of making solid-state electrochemical energy storage devices in which components of the batteries are truly solid-state and do not comprise a gel. Nor do they rely on lithium-containing electrolytes. Electrolytes useful with the solid-state electrochemical energy storage described herein include, for example, ceramic electrolytes exhibiting a crystal structure including voids or crystallographic defects that permit conduction or migration of oxygen ions across a layer of the ceramic electrolyte. Disclosed methods of making solid-state electrochemical energy storage devices include multi-stage deposition processes, in which an electrode is deposited in a first stage and an electrolyte is deposited in a second stage.
대표청구항▼
1. A Faradaic solid-state energy storage device comprising: a first electrode, wherein the first electrode has a first thickness greater than 1 nm and less than or equal to 80 nm, andwherein the first electrode comprises a first redox-supporting transition metal, an oxide of the first redox-supporti
1. A Faradaic solid-state energy storage device comprising: a first electrode, wherein the first electrode has a first thickness greater than 1 nm and less than or equal to 80 nm, andwherein the first electrode comprises a first redox-supporting transition metal, an oxide of the first redox-supporting transition metal, or a combination of the first redox-supporting transition metal and the oxide of the first redox-supporting transition metal;a solid electrolyte positioned in direct contact with the first electrode, wherein the solid electrolyte has a second thickness greater than 1 nm and less than or equal to 500 nm, andwherein the solid electrolyte comprises a solid-state, oxygen ion conducting ceramic electrolyte, wherein the solid-state, oxygen ion conducting ceramic electrolyte has a crystal structure including vacancies that permit conduction or migration of oxygen ions through the crystal structure; anda second electrode positioned in direct contact with the solid electrolyte, wherein the second electrode has a third thickness greater than 1 nm and less than or equal to 80 nm, andwherein the second electrode comprises a second redox-supporting transition metal, an oxide of the second redox-supporting transition metal, or a combination of the second redox-supporting transition metal and the oxide of the second redox-supporting transition metal. 2. The Faradaic solid-state energy storage device of claim 1, wherein the first electrode is dispersed on a first electrically conductive supporting substrate, or wherein the second electrode is dispersed on a second electrically conductive supporting substrate, or both. 3. The Faradaic solid-state energy storage device of claim 1, wherein the first electrode, the second electrode, and the solid electrolyte are independently fabricated using a controllable deposition method including one or more techniques selected from the group consisting of: atomic layer deposition, magnetron sputtering, sputter deposition, molecular beam epitaxy, pulsed deposition, and chemical vapor deposition. 4. The Faradaic solid-state energy storage device of claim 1, wherein the first thickness and the third thickness are independently between 10 nm and 80 nm and wherein the second thickness is between 15 nm and 500 nm. 5. The Faradaic solid-state energy storage device of claim 1, wherein the first redox-supporting transition metal, the second redox-supporting transition metal, or both the first redox-supporting transition metal and the second redox-supporting transition metal comprise a transition metal having two non-zero oxidation states. 6. The Faradaic solid-state energy storage device of claim 1, wherein the first redox-supporting transition metal and the second redox-supporting transition metal have different oxidation states. 7. The Faradaic solid-state energy storage device of claim 1, wherein the first redox-supporting transition metal and the second redox-supporting transition metal are independently Co, or Ni. 8. The Faradaic solid-state energy storage device of claim 1, wherein the first redox-supporting transition metal comprises ruthenium, wherein the second redox-supporting transition metal comprises ruthenium, or wherein both the first redox-supporting transition metal and the second redox-supporting transition metal comprise ruthenium. 9. The Faradaic solid-state energy storage device of claim 1, wherein the first redox-supporting transition metal and the second redox-supporting transtion metal exhibit between 3 and 6 positive oxidation states. 10. The Faradaic solid-state energy storage device of claim 1, wherein the solid electrolyte has a temperature of between 50° C. and 600° C., and wherein the solid electrolyte permits conduction or migration of oxygen ions through the solid electrolyte for participation in redox reactions at the first electrode and the second electrode. 11. The Faradaic solid-state energy storage device of claim 1, further comprising: a second solid electrolyte positioned in direct contact with the second electrode, wherein the second solid electrolyte has a fourth thickness greater than 1 nm and less than or equal to 500 nm, andwherein the second solid electrolyte comprises a second solid-state, oxygen ion conducting ceramic electrolyte, wherein the second solid-state, oxygen ion conducting ceramic electrolyte has the crystal structure including vacancies that permit conduction or migration of oxygen ions through the crystal structure; anda third electrode positioned in direct contact with the second solid electrolyte, wherein the third electrode has a fifth thickness greater than 1 nm and less than or equal to 80 nm, andwherein the third electrode comprises a third redox-supporting transition metal, an oxide of the third redox-supporting transition metal, or a combination of the third redox-supporting transition metal and the oxide of the third redox-supporting transition metal. 12. The Faradaic solid-state energy storage device of claim 1, wherein the first redox-supporting transition metal comprises manganese, wherein the second redox-supporting transition metal comprises manganese, or wherein both the first redox-supporting transition metal and the second redox-supporting transition metal comprise manganese. 13. The Faradaic solid-state energy storage device of claim 1, wherein the first electrode has a first oxidation state and the second electrode has a second oxidation state, and wherien a difference between the first oxidation state and the second oxidation state provides a stored electrical energy density of between 10 J/cm3 and 750 J/cm3. 14. The Faradaic solid-state energy storage device of claim 1, wherein the solid-state, oxygen ion conducting ceramic comprises yttria-stabilized zirconia (YSZ) having the crystal structure including vacancies that permit conduction or migration of oxygen ions through the crystal structure. 15. A method of making a Faradaic solid-state energy storage device, the method comprising: depositing a first electrode on a substrate, wherein the first electrode has a first thickness greater than 1 nm and less than or equal to 80 nm,wherein the first electrode comprises a first redox-supporting transition metal, an oxide of the first redox-supporting transition metal, or a combination of the first redox-supporting transition metal and the oxide of the first redox-supporting transition metal, andwherein depositing the first electrode includes depositing using a first controllable deposition method;depositing a solid electrolyte on the first electrode, wherein the solid electrolyte has a second thickness greater than 1 nm and less than or equal to 500 nm,wherein the solid electrolyte comprises a solid-state, oxygen ion conducting ceramic electrolyte, wherein the solid-state, oxygen ion conducting ceramic has a crystal structure including vacancies that permit conduction or migration of oxygen ions through the crystal structure, andwherein depositing the solid electrolyte includes depositing using a second controllable deposition method; anddepositing a second electrode on the solid electrolyte, wherein the second electrode has a third thickness greater than 1 nm and less than or equal to 80 nm,wherein the second electrode comprises a second redox-supporting transition metal, an oxide of the second redox-supporting transition metal, or a combination of the second redox-supporting transition metal and the oxide of the second redox-supporting transition metal, andwherein depositing the second electrode includes depositing using a third controllable deposition method. 16. The method of claim 15, further comprising: depositing a second solid electrolyte on the second electrode, wherein the second solid electrolyte has a fourth thickness greater than 1 nm and less than or equal to 500 nm,wherein the second solid electrolyte comprises a second solid-state, oxygen ion conducting ceramic electrolyte, wherein the second solid-state, oxygen ion conducting ceramic electrolyte has a crystal structure including vacancies that permit conduction or migration of oxygen ions through the crystal structure, andwherein depositing the second solid electrolyte includes depositing using a fourth controllable deposition method; anddepositing a third electrode on the second solid electrolyte, wherein the third electrode has a fifth thickness greater than 1 nm and less than or equal to 80 nm,wherein the third electrode comprises a third redox-supporting transition metal, an oxide of the third redox-supporting transition metal, or a combination of the third redox-supporting transition metal and the oxide of the third redox-supporting transition metal, andwherein depositing the third electrode includes depositing using a fifth controllable deposition method. 17. The method of claim 15, wherein the first redox-supporting transition metal and the second redox-supporting transition metal independently comprise ruthenium, manganese, cobalt, or nickel, and wherein the solid-state, oxygen ion conducting ceramic electrolyte comprises yttria-stabilized zirconium (YSZ) having the crystal structure including vacancies that permit conduction or migration of oxygen ions through the crystal structure. 18. The method of claim 15, further comprising initiating redox reactions at the first electrode and the second electode to reversibly establish stored electrical energy having a density of between 10 J/cm3 and 750 J/cm3. 19. A Faradaic solid-state energy storage device comprising: a first electrode, wherein the first electrode has a first thickness greater than 1 nm and less than or equal to 80nm, andwherein the first electrode comprises a cobalt oxide or a nickel oxide;a solid electrolyte positioned in direct contact with the first electrode, wherein the solid electrolyte has a second thickness greater than 1 nm and less than or equal to 500 nm, andwherein the solid electrolyte comprises a solid-state, oxygen ion conducting yttrium stabilized zirconium (YSZ) electrolyte, wherein the solid-state, oxygen ion conducting YSZ electrolyte has a crystal structure including vacancies that permit conduction or migration of oxygen ions through the YSZ;a second electrode positioned in direct contact with the solid electrolyte, wherein the second electrode has a third thickness greater than 1 nm and less than or equal to 80nm, andwherein the second electrode comprises cobalt oxide or nickel oxide;a plurality of additional solid electrolytes, each of the plurality of additional solid electrolytes positioned in direct contact with one or two electrodes, wherein the plurality of additional solid electrolytes each independently have thicknesses greater than 1 nm and less than or equal to 500 nm, andwherein the plurality of additional solid electrolytes comprise the solid-state, oxygen ion conducting ceramic electrolyte; anda plurality of additional electrodes, each of the plurality of additional electrodes positioned in direct contact with one or two of the plurality of additional solid electrolytes, wherein the plurality of additional electrodes each independently have thicknesses greater than 1 nm and less than or equal to 80 nm, andwherein the plurality of additional electrodes each independently comprise cobalt oxide or nickel oxide. 20. The Faradaic solid-state energy storage device of claim 19, wherein oxidation states of the cobalt oxide or the nickel oxide alternate from electrode to electrode.
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