Methods for perforating two-dimensional materials using a broad ion field
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01J-037/31
H05H-003/02
B23K-015/06
B23K-015/08
출원번호
US-0610770
(2015-01-30)
등록번호
US-9870895
(2018-01-16)
발명자
/ 주소
Bedworth, Peter V.
출원인 / 주소
Lockheed Martin Corporation
대리인 / 주소
Foley & Lardner LLP
인용정보
피인용 횟수 :
7인용 특허 :
224
초록▼
Perforating graphene and other two-dimensional materials with holes inclusively having a desired size range, a narrow size distribution, and a high hole density can be difficult to achieve. A layer in continuous contact with graphene, graphene-based materials and other two-dimensional materials can
Perforating graphene and other two-dimensional materials with holes inclusively having a desired size range, a narrow size distribution, and a high hole density can be difficult to achieve. A layer in continuous contact with graphene, graphene-based materials and other two-dimensional materials can help promote hole formation. Processes for perforating a two-dimensional material can include exposing to an ion source a two-dimensional material in continuous contact with at least one layer, and interacting a plurality of ions from the ion source with the two-dimensional material and with the at least one layer. The ion source may be a broad ion beam.
대표청구항▼
1. A process comprising: exposing a multilayered material to ions provided by an ion source, the multilayered material comprising a first layer comprising a two-dimensional first material and a second layer of a second material in contact with the first layer, the ions being provided with an ion ene
1. A process comprising: exposing a multilayered material to ions provided by an ion source, the multilayered material comprising a first layer comprising a two-dimensional first material and a second layer of a second material in contact with the first layer, the ions being provided with an ion energy ranging from 1.0 keV to 10 keV, and a flux from 0.1 nA/mm2 to 100 nA/mm2; andproducing a plurality of holes in the two-dimensional first material by interacting a plurality of ions provided by the ion source, neutralized ions or a combination thereof with the two-dimensional first material and with the second material. 2. The process of claim 1, wherein the ion energy is from 1 keV to 5 keV. 3. The process of claim 1, wherein the ion source is a broad beam source. 4. The process of claim 1, wherein the multilayered material is exposed to an ion dose ranging from 1×1011 ions/cm2 to 1×1015 ions/cm2 and the ion source provides ions selected from the group consisting of Xe+ ions, Ne+ ions, or Ar+ ions. 5. The process of claim 1, wherein the multilayered material is exposed to an ion dose ranging from 1×1011 ions/cm2 to 1×1015 ions/cm2 and the ion source provides organic or organometallic ions having a molecular mass from 90 to 200. 6. The process of claim 5, wherein the ion is selected from the group consisting of tropyllium ions and ferrocenium ions. 7. The process of claim 1, wherein the two-dimensional first material comprises graphene. 8. The process of claim 7, wherein the first layer comprises a sheet of a graphene-based material. 9. The process of claim 1, wherein the characteristic dimension of the holes is from 0.5 nm to 2.5 nm. 10. The process of claim 1, wherein the characteristic dimension of the holes is from 1 nm to 10 nm. 11. The process of claim 1, wherein the first layer has a first side and a second side, the first side facing the ion source and the second layer being disposed on the second side of the first layer and having a thickness greater than that of the first layer. 12. The process of claim 11, wherein the second material comprises a metal. 13. The process of claim 12, wherein the second layer comprises a metal growth substrate for the two-dimensional first material and the fragments comprise metal atoms or metal ions ejected from the metal growth substrate. 14. The process of claim 11, wherein the interaction of at least a portion of the ions, neutralized ions, or a combination thereof with the first material introduces a plurality of defects in the first material, a plurality of the ions, neutralized ions, or a combination thereof pass through the first layer comprising the first material to interact with the second material and interaction of the ions, neutralized ions, or a combination thereof with the second material of the second layer promotes expansion of the defects into holes. 15. The process of claim 14, wherein the second material interacts with the ions, neutralized ions, or a combination thereof to produce fragments of the second material, at least some of the fragments of the second material being directed towards the two dimensional material. 16. The process of claim 11, wherein the multilayered material further comprises a third layer of a third material disposed on the first side of the first layer, the third layer having an average thickness ranging from 1 nm to 10 nm. 17. The process of claim 16, wherein the third layer comprises comprises deposited silicon, a deposited polymer, a condensed gas, a condensed organic compound or a combination thereof. 18. The process of claim 16, wherein a plurality of the ions, neutralized ions, or a combination thereof pass through the third layer of the third material to interact with the first material, the interaction of ions, neutralized ions, or a combination thereof with the first (2D) material introducing a plurality of defects in the first material, a plurality of the ions, neutralized ions, or a combination thereof pass through the first layer comprising the first material to interact with the second material and the interaction of at least a portion of the ions, neutralized ions, or a combination thereof with the second material and the third material promotes expansion of the defects into holes. 19. The process of claim 18, wherein the third material interacts with ions, neutralized ions, or a combination thereof to produce fragments of the third material, at least some of the fragments of the third material being directed towards the two dimensional material. 20. The process of claim 1, wherein the first layer has a first side and a second side, the first side facing the ion source and the second layer being disposed on the first side of the first layer, the second layer having an average thickness ranging from 1 nm to 10 nm. 21. The process of claim 20, wherein the second layer comprises comprises deposited silicon, a deposited polymer, a condensed gas, a condensed organic compound or a combination thereof. 22. The process of claim 20, wherein a plurality of the ions, neutralized ions, or a combination thereof pass through the second layer of the second material to interact with the two dimensional material, the interaction of ions, neutralized ions, or a combination thereof with the first material introducing a plurality of defects in the first material and the interaction of at least a portion of the ions, neutralized ions, or a combination thereof with the second material promoting expansion of the defects into holes. 23. The process of claim 22, wherein the second material interacts with the ions, neutralized ions, or a combination thereof to produce fragments of the second material, at least some of the fragments of the second material being directed towards the first material.
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